高屏地區奈米核心設施建造(II)Nano-Laboratory for Kaohsiung and Ping-Tung Area(II)

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奈米國家型科技計畫

核心設施重要成果表

1. 計畫背景：

計畫主持人 (PI)：羅奕凱 (Ikai Lo)

共同主持人 (Co-PIs)：張鼎張(T. C. Chang )、曾百亨(B. H. Tseng )、

陳英忠(Y. C. Chen )、黃吉川(C. C. Huang )

研究題目(Project Title)：高屏地區奈米核心設施建造計畫

(Nano-laboratory for Kaohsiung and Ping-Tong)

主持人執行機構(Institution)：國立中山大學

(National Sun Yat-Sen University)

全程計畫執行期限(Project period)：93.08.01～96.07.31

分年經費 (Budget for each year)

93 年度 (2004) 94 年度 (2005) 95 年度 (2006)

金額(Amount) NT$30,000,000 NT$30,000,000 NT$23,000,100

2. Goals of the project：

The establishment of the core facilities in Center for Nanoscience and Nanotechnology in National Sun Yat-Sen University can benefit the academic research and the industrial technical innovation. A center of nanoscience and nanotechnology has been setup in 2001 to provide research infrastructures for the local academic and industrial research. Kaohsiung is known as the home of tradition industrial of Taiwan. In these research areas, a core-facility center which is usually out of the budge for every individual is needed in a place for easy access. NSYSU is right at the place where provide high-level academic research and manpower to contribute to the nanoscience and to the nano-industry. The core-facility laboratory was built in 2005 to integrate and carry out the projects of nanoscience and nanotechnology in Kaohsiung-Pingtung Area.

Our goal is to foster several research teams that may become one the top teams in the world. Educate abundant high quality research manpower for the academic research and industrial application. It is, therefore, the first priority to have these core facilities setup in NSYSU. The center will provide a warm and efficient atmosphere to form profound research teams, to fir up the creation of new idea and to be able to carry out right after. The center will also provide the most convenience for independent research either from academic or industrial that needs the equipments. Presentations, discussions and workshops will be held periodically to mix up ideas through the speed exchange of information and to train potential human power.

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3. Departments and number of people supported by this project：

Dept. Dept. of Physics, NSYSU Dept. of Chemis try, NSYS U NSYSU Dept. of Mechanical & Electro- Mechanical Engineering Dept. of Electrical Engineerin g ,NSYSU The Institute of Materials Science and Engineerin g Instituteof Electro-optic al Engineering Dept. of Enginee ring Science, NCKU Othe rs Tol. Adviser 1 1 1 1 4 Professo r 14 4 5 3 16 6 1 2 51 Post-doc. 2 2 Research assistant 5 1 6 Student 31 13 11 19 75 18 14 3 184 Total 53 18 16 22 92 25 15 6 247 No. Total:247

4. Outstanding scientific achievements:

The researchers in Kaohsiung-Pingtung area have made several contributions in the low-dimensional semiconductor materials. In the nano-dots field, spherical and well-separated W nano-dots embedded in the SiO2 layer are demonstrated for the first time to be used as the low-power nonvolatile memory device. The tungsten dots are formed with a mean size and aerial density of 4.5 nm and 3.7°1011/cm2, respectively. A significant C-V hysteresis of Vt shift of 0.95 V is observed and the endurance of the memory device is not degraded up to 106 write/erase cycles. In addition, a nonvolatile memory device embedded with Ge nano-dots is fabricated by the thermal oxidation of Si0.8Ge0.2. The tunnel oxide in the nonvolatile memory is controlled to be 4.5 nm-thick and embedded with 5.5-nm Ge nano-dots. A low operating voltage, 5V, is implemented and a significant threshold-voltage shift, 0.42V, is observed. When the electrons are trapped in the Ge nanocrystals, the effect of Coulomb blockade prevents the injection and storage of more electrons and decreases the leakage current.

In the nano-wire filed, we have successfully fabricated polycrystalline silicon thin-film transistors (poly-Si TFTs) with multiple nano-wire channels. The channel length and width

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are 0.5 um and 67 nm, respectively. Superior electrical characteristics, such as higher ON/OFF current ratio (>108), better sub-threshold slop (SS) of 110mV/decade, free of drain induced barrier lowing (DIBL), and suppressed kink-effect, can be achieved, compared to the single channel TFTs. This will be promising for the proposed TFTs device with

nano-wire channels to be applied to active matrix liquid crystal display technologies. See the papers (2) – (5) listed below.

(1) Chiang, CM; Lu, DY; Huang, JT; Hwang, CC; Cho, CC; Fan, LJ; Yang, YW,A unique reaction pathway of fluorine-substituted ethyl groups on Cu(111): Successive

alpha,alpha-fluoride elimination. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 126(39) 12242-12243 (2004) (SCI:6.903)蔣昭明

(2) Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM,Quasisuperlattice storage: A concept of multilevel charge storage. APPLIED PHYSICS LETTERS85(2) 248-250 (2004) (SCI:4.308)張鼎張

(3) Chang, TC; Yan, ST; Yang, FM; Liu, PT; Sze, SM,Memory effect of oxide/SiC : O/oxide sandwiched structures" (vol 84, pg 2094, 2004).APPLIED PHYSICS LETTERS84(23)

4815-4815 (2004)(SCI:4.308)張鼎張

(4) Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM,Leakage behavior of the quasi-superlattice stack for multilevel charge storage.APPLIED PHYSICS LETTERS84(18) 3687-3689 (2004)(SCI:4.308)張鼎張

(5) Chang, TC; Yan, ST; Yang, FM; Liu, PT; Sze, SM,Memory effect of oxide/SiC : O/oxide sandwiched structures.APPLIED PHYSICS LETTERS84(12) 2094-2096 (2004) (SCI:4.308) 張鼎張

(6) Liang, LC; Lin, JM; Lee, WY,Benzene C-H activation by platinum(II) complexes of bis(2-diphenylphosphinophenyl)amide.CHEMICAL COMMUNICATIONS (19) 2462-2464 (2005) (SCI: 3.997)梁蘭昌

(7) Lo, I; Wang, WT; Gau, MH; Tsai, JK; Tsay, SF; Chiang, JC, Gate-controlled spin splitting in GaN/AIN quantum wells. APPLIED PHYSICS LETTERS 88(8):Art. No. 082108(2006) (SCI: 4.308) ; March 6, 2006 issue of the Virtual Journal of Nanoscale Science & Technology.羅奕凱

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5. The number of personnel trained by the training courses and the

number of certificates granted：

2003-2006(Year)

Facilitity training course

certificates granted SEM 62 60 PL 19 19 RAMAN 18 18 ION MILLER 66 66 PLE 27 27

Focus Ion Beam 9 9

Mask Aligner 6 6

Number of person

6. Compare with other core facilities in the world

The Core facility Lab for Nanoscience & Nanotechnology in Kaohsiung-Pingtung Area is a regional research laboratory to benefit the academic research and the industrial technical innovation in southern Taiwan. In order to reach the goal, the strategy of our project is to emphasize the collaborations instead of competition with other laboratories in the world. The collaborated laboratories cover the international and domestic groups. Some of them are listed below.

(1) International Collaborations:

1. Prof. Shuji Nakamura, Univ. of California Santa Barbara (GaN nanostructure growth). We are looking for a suitable substrate for GaN semiconductor growth. It is hoped to tune the physical and optical properties of GaN by controlling its growth orientation. Our crystal growth laboratory will supply the γ-LiAlO2 single crystal substrate to Prof. Nakamura’s group. He will use the Hydride Vapor Phase Epitaxy (HVPE) and Metal Organic Chemical Vapor Deposition (MOCVD) methods to grow GaN material on these substrates.

2. Prof. Klaus H. Ploog, Director of Paul-Drude Institute, Germany (GaN nanostructure growth).

The activity is to grow selforganized GaN nanorods and extend to fabricate GaN nanodiscs embedded in (Al,Ga)N barriers. Bragg reflectors will be incorporated in

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also work on the growth of M-plane GaN on γ-LiAlO2 substrate wafers. Our crystal growth laboratory will supply the γ-LiAlO2 single crystal substrate to Prof. Ploog’s group. He will grow GaN nanostructures on the substrate by adopting Molecular Beam Epitaxy (MBE) methods.

3. Prof. Michael Heuken, vice president of Aixtron Inc, Germany (GaN nanostructure growth).

We collaborate to look for the alternate substrate for AlGaN epitaxial growth. Aixtron Inc will use MOCVD technique to grow light emitting diode (LED) structure on the substrates we grow.

4. Prof. Charles Surya, Department of Electronic and Information Engineering, The Hong Kong Polytechnic University (GaN nanostructure growth).

We are working on the epitaxial growth of M-plane GaN by adopting MOCVD method.

5. Dr. Michael Mastro, Laboratory for Advanced Materials Synthesis, U.S. Naval Research Laboratory (GaN nanostructure growth).

We collaborate on the Ⅲ-Nitride nanomaterials growth on the different substrates. The facility they use is MOCVD.

6. Prof. W. P. Su, Department of Physics, Houston University (Theoretical modeling). 7. Prof. Fow-Sen Chao, Department of Electrical Engineering, University of Maryland,

Baltimore (Semiconductor nano-devicess).

8. Dr. J.F. Guillenmoles, ENSCP, Paris, France (Nanostructures in photovoltaic). 9. Prof. K. Higashi, 日本大阪大學 (Nano-composite).

10. Prof. Claudio Margulis, Department of Chemistry at the University of Iowa (Theoretical calculation).

11. Dr. Cai-Zhuang Wang , Iowa State University, (Theoretical calculation). 12. Prof. Cristian Ciobanu, Colorado School of Mines (Theoretical calculation).

(2) Domestic Collaborations:

1. Prof. S. M. Sze, Department of Electrical Engineering, NCTU (Semiconductor nano-devices).

2. Dr. Jung-Tsung Hsu, Opto-Electronics & Systems laboratories, Industrial Technology Research Institute (GaN nanostructure growth).

3. Dr. P.T. Liu, NDL (Semiconductor nano-devices).

7. Service achievements of core facilities

Levels: B

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Item Facilities Applicant Department / Institue Person/

Times Hours 1 PLE Chen, Hsiu-wei Dept.of Chemistry, NSYSU 2 2.5 2 PLE Dong,Teng-yuan Dept.of Chemistry, NSYSU 105 110.5 3 PLE Mei-Yang Chang Instituteof Electro-optical

Engineering NSYSU 74 115.5 4 PLE Yen-Yao Huang Instituteof Electro-optical

Engineering NSYSU 2 2.5 5 PLE Tsong-Sheng Lay Instituteof Electro-optical

Engineering NSYSU 7 15.5 6 PLE Hsu, Jui-Hung

The Institute of Materials Science and Engineering NSYSU

8 12

7 PLE Lu, Hong-Yang

1 1

8 D1XRD An-Kuo Chu Instituteof Electro-optical

Engineering NSYSU 8 22.5 9 D1XRD Mei-Yang Chang Instituteof Electro-optical

Engineering NSYSU 15 52.5 10 D1XRD Tao-Yuan Chung Instituteof Electro-optical

Engineering 6 42.5

11 D1XRD Sheng-Lung Huang Instituteof Electro-optical

Engineering NSYSU 3 17 12 D1XRD Tsong-Sheng Lay Instituteof Electro-optical

Engineering NSYSU 38 101.6 13 D1XRD Y.L Lay

the Department of Materials Science and

Engineering ,NCKU

1 2

14 D1XRD Gan, Der shin

52 203

15 D1XRD Ho, New-Jin

13 188

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NSYSU

17 D1XRD Chang, Chih Pu

16 74.5

18 D1XRD Hsu, Tzu-Chien J.

17 50.5

19 D1XRD Tseng, Bae-Heng

3 10

20 D1XRD Huang, J. Chih-Ching

23 82.5

21 D1XRD S.L Huang

4 12

22 D1XRD Hsieh, Ker-Chang

2 3.5 23 D1XRD Li-Wei Tu Dept. of Physics,NSYSU 108 428 24 D1XRD Hsiung Chou Dept. of Physics,NSYSU 151 499 25 D1XRD Ting-Chang Chang Dept. of Physics,NSYSU 61 229.7 26 D1XRD Der-Jun Jang Dept. of Physics,NSYSU 2 6.5 27 D1XRD Ikai Lo Dept. of Physics,NSYSU 76 363 28 D1XRD J.H. Ding

National Kaohsiung Marine University Department of Marine Engineering

14 47.5

29 D1XRD C.T.Wu

11 27.5

30 D1XRD M.L. Xie

2 4

31 D1XRD S.I.Peng NKFUST Dept. of

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32 D1XRD L.S. Liu

Department of Mold and Die Engineering,National Kaohsiung University of Applied Sciences 1 4 33 D1XRD S.W.Ye Department of Mechanical Engineering, Chinese Military Academy

18 49.5

34 D1XRD S. Y. Zheng

The Department ofMaterials Science and Engineering I-Shou Univ.

1 7

35 D1XRD Lee Ming-Kwei Dept. of Electrical Engineering

,NSYSU 3 7

36 D1XRD Ueng Herng-Yih Dept. of Electrical Engineering

,NSYSU 1 4

37 D1XRD Chen Ying-Chung Dept. of Electrical Engineering

,NSYSU 3 11

38 D1XRD Hwang, Jen-Jyh

NSYSU Dept. of Mechanical & Electro-Mechanical

Engineering

6 29

39 D1XRD Young,Tai-Fa

Engineering

10 38.5

40 D8 J. C.Yang

the Department of Marine Environment and

Engineering,Nsysu NN

2 5

41 D8XRD Gan, Der shin

2 7.5

42 D8XRD D.T.Lin

Department of Physics at National Kaohsiung Normal University 2 4 43 D8XRD Y.L.Zhong Department of Electrical Engineering,National KaohsiungUniv.of Applied Sciences 1 4

44 FIB An-Kuo Chu Instituteof Electro-optical

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45 FIB Sheng-Lung Huang Instituteof Electro-optical

Engineering NSYSU 2 8.0 46 FIB Tsong-Sheng Lay Instituteof Electro-optical

Engineering NSYSU 1 5.0 47 FIB Ming-Chi Chou

1 5.0

48 FIB Tseng, Bae-Heng

7 39.5 49 FIB Li-Wei Tu Dept. of Physics,NSYSU 1 8.0 50 FIB Hsiung Chou Dept. of Physics,NSYSU 2 5.0 51 FIB Ting-Chang Chang Dept. of Physics,NSYSU 27 93.5 52 FIB Ikai Lo Dept. of Physics,NSYSU 16 59.5 53 FIB Chao,Chien-Hsiang

Engineering

4 16.0 54 FIB Z.W.Hong National Chung Hsing Univ. 2 6.0 55 FIB Kwang-Lung Lin

Engineering ,NCKU

1 8.0

56 FIB Chuan-Pu Liu

the Department of Materials Science and Engineering NCKU

5 24.0

57 FIB Jr-Ming Ting

3 11.0

58 FIB Kuan-Zong Fung

2 4.5

59 FIB In-Gann Chen

5 11.0

60 FIB Max Chung Southern Taiwan Univ. of

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Dept.electronEngineering 61 FIB Y.F Huang International Semiconductor

Technology Ltd. 4 11.6 62 FIB S.L.Huang

Department of Mechanical Engineering, Chinese Military Academy

1 1.5 63 FTIR Chen, Hsiu-wei Dept.of Chemistry, NSYSU 3 3

64 FTIR Gan, Der shin

The Institute of Materials Science and Engineering NSYSU NSYSU

4 12

65 FTIR Tao-Yuan Chung

1 2

66 FTIR Bai, S. J.

12 25

67 FTIR Shen, Pouyan

3 11.5

68 FTIR Ming-Chi Chou

2 4

69 FTIR M.L.Wu Du Pont Co. 1 1

70 FTIR Ting-Chang Chang Dept. of Physics,NSYSU 1 7 71 FTIR T.G.Zhu

Dep. Of Safety Health and Environment

Engineering,NKFUST

1 14

72 FTIR Lee Ming-Kwei Dept. of Electrical Engineering

,NSYSU 2 4

73 FTIR S.C. Yuan

5 10

74 FTIR J.C. Yang

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75 Ion Miller Ming-Chi Chou

26 80

76 Ion Miller Gan, Der shin

73 249.25

77 Ion Miller An-Kuo Chu Instituteof Electro-optical

Engineering NSYSU 18 48 78 Ion Miller Tao-Yuan Chung Instituteof Electro-optical

Engineering NSYSU 6 44 79 Ion Miller Sheng-Lung Huang Instituteof Electro-optical

Engineering NSYSU 26 88 80 Ion Miller Y.L. Lay

3 7.5

81 Ion Miller Bai, S. J.

1 1

82 Ion Miller Ho, New-Jin

3 16

83 Ion Miller Shen, Pouyan

65 197

84 Ion Miller D.R.Hong

2 4.5

85 Ion Miller Tseng, Bae-Heng

1 3.5

86 Ion Miller Huang, J. Chih-Ching

67 243

87 Ion Miller Lu, Hong-Yang

84 391.8 88 Ion Miller Li-Wei Tu Dept. of Physics,NSYSU 27 118

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89 Ion Miller Young,Tai-Fa

Engineering

17 76

90 Life time Lee Ming-Kwei Dept. of Electrical Engineering

,NSYSU 7 18.5

91 Life Time Dong,Teng-yuan Dept.of Chemistry, NSYSU 13 71 92 Life Time Chao-Kuei Lee Instituteof Electro-optical

Engineering NSYSU 1 2

93 Life Time Mei-Yang Chang Instituteof Electro-optical

94 Nano-Indenter Pan, Cheng-Tang

Engineering

2 100 95 Pd-xray Chen, Hsiu-wei Dept.of Chemistry, NSYSU 2 2.5 96 Pd-xray Chiang, Michael

Yen-Nan Dept.of Chemistry, NSYSU 1 2 97 Pd-xray Mei-Yang Chang Instituteof Electro-optical

98 Pd-xray Hsiung Chou Dept. of Physics,NSYSU 59 244 99 Pd-xray Hung-Duen Yang Dept. of Physics,NSYSU 10 25 100 PL Y.L. Lay

1 1.5

101 PL L.C.Hong Institute of

Microelectronics,NCKU 1 3 102 PL D.R.Hang

13 41

103 PL Tseng, Bae-Heng

7 12.5 104 PL Li-Wei Tu Dept. of Physics,NSYSU 12 54 105 PL Chie-Tong Kuo Dept. of Physics,NSYSU 7 36.5 106 PL Ikai Lo Dept. of Physics,NSYSU 16 48.5

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107 PL Lee Ming-Kwei Dept. of Electrical Engineering

,NSYSU 25 73.5

108 PL Chen Ying-Chung Dept. of Electrical Engineering

,NSYSU 69 211

109 PL C.Z.Yan The Institute of Materials

Science and Engineering 1 1 110 PL Y.L. Lay

2 9

111 PLE H.J. Chen

1 1 112 PLE Li-Wei Tu Dept. of Physics,NSYSU 16 16 113 PLE Chie-Tong Kuo Dept. of Physics,NSYSU 1 2 114 PLE Der-Jun Jang Dept. of Physics,NSYSU 1 1 115 Raman Chen, Hsiu-wei Dept.of Chemistry, NSYSU 3 7

116 Raman C.K.Xiong SPIC 1 5

117 Raman S.M.Zhang Dept. of Electrical

Engineering.Da-Yeh Univ. 1 2.5 118 Raman G.W.Jiao Dept. of Electrical

Engineering.Da-Yeh Univ. 10 32.5 119 Raman S.M.Huang Dept. of Chemical Engineering

National Chung Cheng Univ. 2 10.5 120 Raman Y.L.Lai

Graduate Institute of

Opto-Mechatronics, National Chung Cheng Univ.

1 13

121 Raman S.C.Jian

The Department of Materials Engineering,National Chung Hsing Univ.

1 1.5

122 Raman Wood-Hi Cheng Instituteof Electro-optical

123 Raman J.I. Chang

2 8.5 124 Raman H.P. Liu the Department of Materials 1 6

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Science and Engineering NCKU

125 Raman Y.L. Lay

1 5

126 Raman L.C.Hong Institute of

Microelectronics,NCKU 1 2 127 Raman Gan, Der shin

11 35

128 Raman Bai, S. J.

8 36

129 Raman Shen, Pouyan

11 27.05

130 Raman D.R.Hang

31 98.5

131 Raman Hong, Jin-Long

1 6

132 Raman Tseng, Bae-Heng

1 1 133 Raman H.K.Wang Chi Mei Optoelectronics 1 3

134 Raman MingDao University 1 6

135 Raman Li-Wei Tu Dept. of Physics,NSYSU 71 599 136 Raman Hsiung Chou Dept. of Physics,NSYSU 7.5 7.5 137 raman Der-Jun Jang Dept. of Physics,NSYSU 5 18 138 raman Ikai Lo Dept. of Physics,NSYSU 19 79

139 Raman W.J.Huang

The department of Electronics Engineering & Institute of Electronics of Chang Gung University

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140 Raman J.H.Ding

2 5.5

141 Raman J.T. Wu

2 2

142 Raman M.Z.Xie

1 1.5

143 Raman

Department of Mold and Die Engineering,National Kaohsiung University of Applied Sciences 1 1.5 144 Raman W.F. Chung Department of Chemistry,National Kaohsiung University of Applied Sciences

3 7

145 Raman

Institute of

MicroElectroMechanical System, National Tsing Hua University

1 2

146 Raman S.W.Yeh

1 2

147 Raman Lee Ming-Kwei Dept. of Electrical Engineering

,NSYSU 10 24

148 Raman Chen Ying-Chung Dept. of Electrical Engineering

,NSYSU 45 170.5

149 Raman Young,Tai-Fa

Engineering

11 23

150 Raman Y.K.Lin 1 1.5

151 Raman（LT） Hsiung Chou Dept. of Physics,NSYSU 1 36 152 SEM S.J.Cai Yung-Ta Institute of

Technology and Commerce 1 0 153 SEM Chen, Hsiu-wei Dept.of Chemistry, NSYSU 1 2

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155 SEM Dong,Teng-yuan Dept.of Chemistry, NSYSU 2 5

156 SEM C.Y.Chang NUTN 3 3.5

157 SEM C.S.Yeh NUTN 1 2

158 SEM Y.K.Liu

Department of Mechanical Engineering

Cheng Shiu University

1 2.5 159 SEM J.G.Wang Yuen Foong Yu Group 4 10 160 SEM An-Kuo Chu Instituteof Electro-optical

Engineering 112 244.5 161 SEM Mei-Yang Chang Instituteof Electro-optical

Engineering NSYSU 12 18.25 162 SEM Tao-Yuan Chung Instituteof Electro-optical

163 SEM Sheng-Lung Huang Instituteof Electro-optical

Engineering NSYSU 20 34 164 SEM Wood-Hi Cheng Instituteof Electro-optical

Engineering NSYSU 2 4.5 165 SEM Tsong-Sheng Lay Instituteof Electro-optical

Engineering NSYSU 52 108 166 SEM L.C.Hong Institute of

Microelectronics,NCKU 1 6 167 SEM C.S.IV Institute of Nanotechnology and Microsystems Engineering,NCKU 1 1

168 SEM W.M.Liu Department of Resources

Engineering,NCKU 1 3.5 169 SEM Y.D.Lin The Department of Mechanical Engineering,NCKU 3 12 170 SEM Y.t.Zhu

EngineeringNCKU

1 1

171 SEM H.D. Cheng

EngineeringNCKU

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172 SEM C.P. Chung

EngineeringNCKU

1 1

173 SEM Gan, Der shin

3 7.5

174 SEM Ho, New-Jin

36 70

175 SEM Shen, Pouyan

2 2.5

176 SEM Hsu, Jui-Hung

3 6

177 SEM Chang, Chih Pu

31 61.2

178 SEM Hsu, Tzu-Chien The Institute of Materials

Science and Engineering 10 16 179 SEM Tseng, Bae-Heng

7 14

180 SEM Su, An-Chung

11 34 181 SEM Li-Wei Tu Dept. of Physics,NSYSU 184 380 182 SEM Hsiung Chou Dept. of Physics,NSYSU 10 10.5 183 SEM Ting-Chang Chang Dept. of Physics,NSYSU 36 77 184 SEM Ikai Lo Dept. of Physics,NSYSU 29 61.5 185 SEM Max Chung

Southern Taiwan Univ. of Technology

Dept.electronEngineering

1 1

186 SEM C.P.Zhao WK Co.,Ltc 2 3

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Education National Pingtung University of Education 188 SEM Y.F Huang International Semiconductor

Technology Ltd. 3 1.1

189 SEM Y.F Huang International Semiconductor

Technology Ltd. 2 2.9

190 SEM J.H.Ding

26 53

191 SEM J.L.Wang

2 9

192 SEM J.T.Wu

1 1.5

193 SEM M.L.Xie

8 12

194 SEM Y.G.TU NKFUST 2 3.5

195 SEM G.F.Xu

Department of Mold and Die Engineering,National

Kaohsiung University of Applied Sciences

1 2

196 SEM G.P.Hu Kun Shun Univ. 1 2 197 SEM C.H.Gao

1 1

198 SEM J.L. Wu

1 3

199 SEM L.H. Zeng

1 1

200 SEM W.Z. Liu

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201 SEM S. Y. Zheng

3 5

202 SEM T. W. Shen

1 1

203 SEM Lee Ming-Kwei Dept. of Electrical Engineering

,NSYSU 12 28

204 SEM Chen Ying-Chung Dept. of Electrical Engineering

,NSYSU 34 52

205 SEM I-Yu Huang Dept. of Electrical Engineering

,NSYSU 4 8

206 SEM Factory 1 5

207 SEM Che-Hsin Lin

Engineering

29 55.5

208 SEM Young,Tai-Fa

Engineering

2 6

209 SEM Pan, Cheng-Tang

Engineering

2 2.5

210 SEM J.C. Yang

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8. Service achievements( Facility is open to all and it has been used very

efficiently).

Facility Year Horus Persons Amount(NT$)

SEM

2004~2005 1,330.20 642 568,150 2006(Jan.~Mar.) 189.75 103 71,550 Tol. 1520 745 639,700

D1

2004~2005 2231.60 555.5 737,275 2006(Jan.~Mar.) 342.50 89 119,650 Tol. 2574.10 644.5 856,925

D8

2004~2005 287.50 76 64,250 2006(Jan.~Mar.) 5.00 2 2,500 Tol. 292.50 78 66,750

FTIR

2004~2005 94.00 38 44,300 2006(Jan.~Mar.) 5.00 3 5,000 Tol. 99.00 41 49,300

Ion miller

2004~2005 1408.05 368 130,630 2006(Jan.~Mar.) 116.50 36 9,975 Tol. 1254.55 404 140,605

Ramon

2004~2005 1419.10 244 192,770 2006(Jan.~Mar.) 79.50 23 17,900 Tol. 1498.60 267 210,670

PL

2004~2005 388.50 113 66,800 2006(Jan.~Mar.) 52.50 18 14,000 Tol. 441.00 131 80,800

Life Time

2004~2005 78.50 21 7,725 2006(Jan.~Mar.) 63.50 12 3,275 Tol. 142.00 33 11,000

PLE

2004~2005 219.00 167 22,500 2006(Jan.~Mar.) 110.50 103 11,750 Tol. 329.50 270 34,250

Focus Ion Beam

2004~2005 72 17 66,880

2006(Jan.~Mar.) 291.6 86 501,302

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Mask Aligner

2004~2005 0 0 0

2006(May) 30 12 21,000

Tol. 30 12 21,000

Total

8814.6 2,687.5 2,679,182

Service achievements

(FIB) Nov. 2005～Mar. 2006

Department / Institue Hours Persons Amount(NT$) Members of Nano Core Facility 239 63 285,282 Inside the school 18 4 28,450 Academia Outside the school 95 32 213,850 industrial circles 11.6 4 40,600 Total 363.6 103 568,182 0 20 40 60 80 100 120 140 160 94.11 94.12 95.01 95.02 95.03 Hours Persons 143.5 69.6 78.5 57.5 46 21 19 13 14.5 4

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Appendix

Publicaiton

： ﹡2003:

1 .Wang, YN; Huang, JC,Texture characteristics and anisotropic superplasticity of AZ61 magnesium alloy.MATERIALS TRANSACTIONS

44(11) 2276-2281 (2003) (SCI:1.120)黃仁智

2. Chang, TC; Yan, ST; Liu, PT; Chen, CW; Lin, SH; Sze, SM,A novel approach of fabricating germanium nanocrystals for nonvolatile memory application.

ELECTROCHEMICAL AND SOLID STATE LETTERS7(1) G17-G19 (2004) (SCI:2.27

張鼎張

3 .Kuo, MC; Huang, JC; Chen, M; Jen, MH,Fabrication of high performance

magnesium/carbon-fiber/PEEK laminated composit. MATERIALS TRANSACTIONS44(8) 1613-1619 (2003) (SCI:1.120)任明華

4 .Liang, LC; Yang, CW; Chiang, MY; Hung, CH; Lee, PY,Syntheses and X-ray structures of some pyrrolylaldiminate metal complexes. JOURNAL OF ORGANOMETALLIC

CHEMISTRY679(1)135-142 (2003) (SCI:1.905) 梁蘭昌

5 .Dong, TY; Lin, MC; Lee, L; Cheng, CH; Peng, SM; Lee, GH,Pronounced effects of grinding on rates of intramolecular electron transfer in mixed-valence 1 ',2 ',1 ''',2 '''-tetranaphthylmethyl- and 1 ',3 ',1 ''',3 '''-tetranaphthylmethyl-biferrocenium

triiodides.JOURNAL OF ORGANOMETALLIC CHEMISTRY679(2)181-193 (2003) (SCI:1.905) 董騰元

6. Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Kuo, PY; Huang, TY; Chang, CY; Liu, PT,A study of parasitic resistance effects in thin-channel polycrystalline silicon TFTs with tungsten-clad source/drain.IEEE ELECTRON DEVICE LETTERS 24(8)509-511 (2003)(SCI:2.538)張鼎張

7. Liang, LC; Lin, JM; Hung, CH,Nickel(II) complexes of

bis(2-diphenylphosphinophenyl)amide.ORGANOMETALLICS22(15) 3007-3009 (2003) (SCI:3.196) 梁蘭昌

8. Lo, I; Tsai, JK; Ho, PC; Yao, WJ; Chang, CH; Chiang, JC; Tu, LW; Zhao, QX,Second subband population of the two-dimensional electron gas in strongly coupled

GaAs/Al0.3Ga0.7As double quantum wells.PHYSICAL REVIEW B67(19) 195-317 (2003) (SCI:3.075) 羅奕凱

9. Dong, TY; Huang, BR; Lin, MC; Chiang, MY,A functionalized pyridinyl ligand containing binuclear biferrocene.POLYHEDRON 22(9)1199-1204 (2003) (SCI:1.586) 董騰元

10. Liu, PH; Ding, SW,Application of weakly oriented non-ionic liquid crystal solvents to NMR studies of poly-ethylene oxide (PEO).JOURNAL OF THE CHINESE CHEMICAL

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11. Ding, SG; Liu, PH; Hong, YW,Long time tail effect in liquid state NMR spectroscopy.CHEMICAL PHYSICS LETTERS 368(34)338-345 (2003) (SCI:2.438) 丁尚武

﹡2004:

1. Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM,Quasi-superlattice storage - A concept of multilevel charge storage. JOURNAL OF THE

ELECTROCHEMICAL SOCIETY 151( 12) G805 G808 (2004) (SCI:2.356)

張鼎張

2. Pan, CT; Chien, CH; Hsieh, CC, Technique of microball lens formation for efficient optical coupling. APPLIED OPTICS 43(32) 5939-5946 (2004) (SCI: 1.799) 潘正堂

3. Pan, CT; Shen, SC; Hsieh, CC; Chien, CH; Chen, YC,Numerical method to predict and fabricate aspherical microlens arrays using 248-nm excimer laser ablation.

JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS 3(4)555- 562 (2004)潘正堂

4. Hsieh, PJ; Huang, JC; Hung, YP; Chou, SI; Jang, JSC,Characterization on nanocrystallization and amorphization evolution in Zr-X alloys during ARB process. MATERIALS CHEMISTRY AND PHYSICS 88(2-3) 364-376 (2004) (SCI:1.113)黃志青

5.Chen, HW; Wang, CY; Yu, CH; Tseng, LT; Liao, PH,Carbon dioxide reforming of methane reaction catalyzed by stable nickel copper catalysts.CATALYSIS TODAY 97(2-3)

173-180 (2004) (SCI:3.108)陳修維

6.Dong, TY; Shih, HW; Chang, LS,Synthesis and redox behavior of

biferrocenyl-functionalized ruthenium(II) terpyridine gold clusters. LANGMUIR

20(21) 9340-9347 (2004) (SCI:3.295)董騰元

7.Chang, TC; Yan, ST; Liu, PT; Lin, ZW; Aoki, H; Sze, SM,Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications (Vol 447, pg 516, 2004) .THIN SOLID FILMS 467 (1-2) 342-342 (2004)

(SCI:1.647)張鼎張

8.Chiang, CM; Lu, DY; Huang, JT; Hwang, CC; Cho, CC; Fan, LJ; Yang, YW,A unique reaction pathway of fluorine-substituted ethyl groups on Cu(111): Successive alpha,alpha-fluoride elimination. JOURNAL OF THE AMERICAN

CHEMICAL SOCIETY 126(39) 12242-12243 (2004) (SCI:6.903)蔣昭明

9. Hsieh, PJ; Hung, YP; Chou, SI; Huang, JC, Nanocrystallization and amorphization mechanisms in Zr-X alloys during the ARB process. MATERIALS TRANSACTIONS

45(8) 2686-2692 (2004) (SCI:1.120)黃志青

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molecular wires containing ruthenium(II) terpyridine complexes.

ORGANOMETALLICS23(16) 3921-3930 (2004) (SCI:3.196) 董騰元

11.Dong, TY; Lin, MC; Chiang, MYN,Towards the development of polynuclear electron reservoirs containing terpyridine metal complexes.INORGANIC

CHEMISTRY COMMUNICATIONS7(5) 687-690(2004) (SCI:1.682) 董騰元

12.Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM,Quasisuperlattice storage: A concept of multilevel charge storage. APPLIED PHYSICS LETTERS85(2) 248-250 (2004) (SCI:4.308)張鼎張

13.Chang, TC; Tsai, TM; Liu, PT; Yan, ST; Chang, YC; Aoki, H; Sze, SM; Tseng, TY,Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application.JOURNAL

OF VACUUM SCIENCE & TECHNOLOGY B22(3) 1196-1201 (2004) ( SCI:1.664)

張鼎張

14. Liang, LC; Lee, WY; Yin, CC,Nickel(II) complexes containing bidentate diarylamido phosphine ligands.ORGANOMETALLICS3(14) 3538-3547 (2004) (SCI:3.196)梁蘭昌 15.Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, YC; Sze, SM,Study on SONOS nonvolatile

memory technology using high-density plasma CVD silicon

nitride.ELECTROCHEMICAL AND SOLID STATE LETTERS7(6) G113-G115 (2004) (SCI:2.271) 張鼎張

16.Chang, TC; Yan, ST; Liu, PT; Wang, MC; Sze, SM,A method for fabricating a superior oxide/nitride/oxide gate stack.ELECTROCHEMICAL AND SOLID

STATE LETTERS 7(7) G138-G140 (2004) (SCI:2.271)張鼎張

17.Chang, TC; Yan, ST; Yang, FM; Liu, PT; Sze, SM,Memory effect of oxide/SiC : O/oxide sandwiched structures" (vol 84, pg 2094, 2004).APPLIED PHYSICS

LETTERS84(23) 4815-4815 (2004) (SCI:4.308)張鼎張

18.Huang, MH; Liang, LC,Amido pincer complexes of palladium: Synthesis, structure, and catalytic Heck reaction.ORGANOMETALLICS23(11) 2813-2816 (2004) (SCI:3.196) 梁蘭昌

19.Dong, TY; Chang, LS; Tseng, IM; Huang, SJ,Electroactive self-assembled biferrocenyl alkanethiol monolayers on Au(111) surface and on gold nanoclusters.LANGMUIR20(11) 4471-4479 (2004) (SCI:3.295) 董騰元

20.Shih, HW; Dong, TY,Synthesis and redox behavior of biferrocenyl terpyridine-functionalized gold clusters .INORGANIC CHEMISTRY

COMMUNICATIONS7(5) 646-649 (2004) (SCI:1.682) 董騰元

21.Pan, CT,Selective electroless copper plating micro-coil assisted by 248 nm excimer laser.MICROELECTRONIC ENGINEERING71(34) 242-251 (2004) (SCI:1.514) 潘正堂

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elements.JOURNAL OF MICROMECHANICS AND MICROENGINEERING14(4) 471-479 (2004) (SCI:2.048) 潘正堂

23.Pan, CT,Selective low temperature microcap packaging technique through flip chip and wafer level alignment.JOURNAL OF MICROMECHANICS AND

MICROENGINEERING14(4) 522-529 (2004) (SCI:2.048) 潘正堂

24.Wu, YC; Chang, TC; Chang, CY; Chen, CS; Tu, CH; Liu, PT; Zan, HW; Tai,

YH,High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure.APPLIED PHYSICS LETTERS84(19)

3822-3824 (2004) (SCI:4.308)張鼎張

25.Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM,Leakage behavior of the quasi-superlattice stack for multilevel charge storage.APPLIED PHYSICS

LETTERS84(18) 3687-3689 (2004) (SCI:4.308)張鼎張

26.Yu, KC; Wan, FX; Zhang, Y; Zhou, JL; Lu, G; Liu, ML; Ding, SW,Synthesis and MRI relaxation enhancement of mono-exter-amido gadolinium complexes.CHINESE

JOURNAL OF INORGANIC CHEMISTRY20(4) 389-393 (2004) (SCI:0.4)丁尚武

27.Pan, CT; Shen, SC; Yang, HH,Efficient coupling of electrostatic optical fiber switch.SENSORS AND MATERIALS16(1)13-24 (2004) (SCI:0.538) 潘正堂 28.Chang, TC; Yan, ST; Hsu, CH; Tang, MT; Lee, JF; Tai, YH; Liu, PT; Sze, SM,A

distributed charge storage with GeO2 nanodots.APPLIED PHYSICS LETTERS84(14) 2581-2583 (2004) (SCI:4.308)張鼎張

29.Liang, LC; Huang, MH; Hung, CH,Aluminum complexes incorporating bidentate amido phosphine ligands.INORGANIC CHEMISTRY 43(6) 2166-2174 (2004)

(SCI:3.454) 梁蘭昌

30.Pan, CT; Shen, SC,Design and fabrication of polymeric microoptical components using excimer laser ablation.MATERIALS SCIENCE AND TECHNOLOGY20(2) 270-274 (2004) (SCI:0.639) 潘正堂

31.Chang, TC; Yan, ST; Yang, FM; Liu, PT; Sze, SM,Memory effect of oxide/SiC : O/oxide sandwiched structures.APPLIED PHYSICS LETTERS84(12) 2094-2096 (2004) (SCI:4.308)張鼎張

32.Liang, LC; Lee, PY; Lan, WL; Hung, CH,Coordination chemistry of a multidentate pyrrolylaldiminate ligand. X-ray crystal structure of double-helical bis-mu-[N,N '-ethylenedi(5-tert-butyl-pyrrol-2-ylaldiminate)]-dimagnesium.JOURNAL OF

ORGANOMETALLIC CHEMISTRY689(5) 947-952 (2004) (SCI:1.905) 梁蘭昌

33.Chang, TC; Yan, ST; Liu, R; Lin, ZW; Aoki, H; Sze, SM,Extraction of electrical

mechanisms of low-dielectric constant material MSZ for interconnect applications.THIN

SOLID FILMS447 516-523 (2004)(SCI:1.647)張鼎張

34.Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, T,CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications.THIN

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SOLID FILMS447 524-530 (2004) (SCI:1.647)張鼎張

35.Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Huang, HC; Chen, JM; Tseng, CH; Liu, CC; Tseng, TY,Investigation of the electrical properties and reliability of amorphous

SiCN.THIN SOLID FILMS447 632-637 (2004)(SCI:1.647)張鼎張

36.Liu, PT; Chen, CW; Chang, TC; Tseng, TY,Pattern profile distortion and stress evolution in nanoporous organosilicates after photoresist stripping.ELECTROCHEMICAL AND

SOLID STATE LETTERS 7(2) F5-F7 (2004) (SCI:2.271)張鼎張

37.Liu, ZH; Deng, F; Ding, SW,Effects of pulse strength, width, and sample spinning speed on the spectral spin diffusion of multiquantum coherences of spin-3/2 quadrupolar

nuclei.JOURNAL OF CHEMICAL PHYSICS120(2) 740-748 (2004) (SCI:3.105) 丁尚武 38.Tsai, JK; Lo, I; Chuang, KL; Tu, LW; Huang, JH; Hsieh, CH; Hsieh, KY,Effect of N to

Ga flux ratio on the GaN surface morphologies grown at high temperature by plasma-assisted molecular-beam epitaxy.JOURNAL OF APPLIED

PHYSICS95(2)460-465 (2004) (SCI:2.255)羅奕凱

﹡2005:

1. Pan, CT; Hwang, YM; Hsieh, CW, Fast fabrication of silicon based microstructures using 355 nm UV laser. MATERIALS SCIENCE AND TECHNOLOGY. 1(11):1344-1348 (2005) (SCI: 0.639) 潘正堂

2. Chiang, CM; Cho, CC, Probing the internal competition between alpha- and beta-elimination by fluorine substitution in adsorbed ethyl groups on Cu(100). JOURNAL OF PHYSICAL CHEMISTRY B 109(46) 21486-21488 (2005)

(SCI: 3.834) 蔣昭明

3. Ju, SP; Lo, YC; Sun, SJ; Chang, JG, Investigation on the structural variation of Co-Cu nanoparticles during the annealing process. JOURNAL OF PHYSICAL

CHEMISTRY B 109(44) 20805-20809(2005) (SCI: 3.834)朱訓鵬

4. Yeh, PH; Yu, CH; Chen, LJ; Wu, HH; Liu, PT; Chang, TC, Low-power memory device with NiSi2 nanocrystals embedded in silicon dioxide layer. APPLIED PHYSICS

LETTERS 87(19) Art. No. 193504(2005) (SCI: 4.308)張鼎張

5. Chuang, CH; Huang, JC; Hsieh, PJ, Using friction stir processing to fabricate MgAlZn intermetallic alloys. SCRIPTA MATERIALIA 53(12):1455-1460(2005)(SCI: 2.112)黃志青 6. Hsiao, CL; Tu, LW; Chen, M; Jiang, ZW; Fan, NW; Tu, YJ; Wang, KR, Polycrystalline to

single-crystalline InN grown on Si(111) substrates by plasma-assisted olecular-beam epitaxy. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS

LETTERS. 44(33-36):L1076-L1079 (2005) (SCI: 1.142)杜立偉

7. Chen, CW; Chang, TC; Liu, PT; Lu, HY; Wang, KC; Huang, CS; Ling, CC; Tseng, TY, High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED

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張鼎張

8. Wu, YC; Chang, TC; Liu, PT; Chen, CS; Tu, CH; Zan, HW; Tai, YH; Chang, CY, Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels. IEEE TRANSACTIONS ON ELECTRON DEVICES 52(10)

2343-2346(2005) (SCI: 2.036) 張鼎張

9. Wu, YC; Chang, TC; Liu, PT; Wu, YC; Chou, CW; Tu, CH; Lou, JC; Chang, CY,Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization. APPLIED

PHYSICS LETTERS 87(14) Art. No. 143504(2005) (SCI: 4.308)張鼎張

10. Kuo, CT; Huang, SY; Kuo, MS; Jang, DJ,Temperature and polarization dependence of transient gratings in azo-dye-doped liquid crystals JAPANESE JOURNAL OF APPLIED

PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44(5A)3111-3114 (2005) (SCI: 1.142)郭啟東

11. Chien, PS; Liang, LC,Zirconium and hafnium complexes containing bidentate diarylamido-phosphine ligands.INORGANIC CHEMISTRY, 44(14) 5147-5151(2005)

(SCI: 3.454)梁蘭昌

12.Yang, FM; Chang, TC; Liu, PT; Chen, CW; Tai, YH; Lou, JC,Damage effect of fluorine implantation on PECVD alpha-SiOC barrier dielectric. NUCLEAR

INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 237(1-2) 301-306(2005) (SCI:

0.997) 張鼎張

13. Lin, HK; Huang, JC; Langdon, TG, Relationship between texture and low temperature superplasticity in an extruded AZ31 Mg alloy processed by ECAP. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL

MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING 402(1-2) 250-

257 (2005) (SCI:1.445)黃志青

14. Chen, SC; Lou, JC; Chien, CH; Liu, PT; Chang, TC,An interfacial investigation of high-dielectric constant material hafnium oxide on Si Substrate.THIN SOLID

FILMS 488(1-2) 167-172 (2005) (SCI:1.647) 張鼎張

15.Zhou, JL; Wan, FX; Yu, KC; Ding, SW, Synthesis of amphiphilic dimers of Gd (III) complexes and their liver-selective contrast enhancement in MRI. CHEMICAL

JOURNAL OF CHINESE UNIVERSITIES-CHINESE 26(8)1391-1394 (2005) (SCI:0.764)

丁尚武

16.Pan, CT; Hwang, YM; Hsieh, CW, Dynamic characterization of silicon-based microstructure of high aspect ratio by dual-prism UV laser system. SENSORS AND

ACTUATORS A-PHYSICAL 122 (1)45-54 (2005) (SCI:1.462)潘正堂

17.Chien, CH; Pan, CT; Hsieh, CC; Yang, CM; Sher, KL, A study of the geometry of microball lens arrays using the novel batch-fabrication Technique. SENSORS AND

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ACTUATORS A-PHYSICAL 122 (1) 55-63 (2005) (SCI:1.462)潘正堂

18.Dong, TY; Chen, KL; Lin, MC; Lee, LS,Toward the development of molecular wires: Ruthenium(II) terpyridine complexes containing polyferrocenyl as a spacer.

ORGANOMETALLICS 24(17) 4198-4206 (2005) (SCI:3.196)董騰元

19.Tu, CH; Chang, TC; Liu, PT; Zan, HW; Tai, YH; Yang, CY; Wu, YC; Liu, HC; Chen, WR; Chang, CY,Enhanced performance of poly-Si thin film transistors using fluorine ions implantation.ELECTROCHEMICAL AND SOLID STATE LETTERS 8(9)

G246-G248(2005)(SCI:2.271) 張鼎張

20.Chen, CW; Chang, TC; Liu, PT; Lu, HY; Tsai, TM; Weng, CF; Hu, CW; Tseng, TY,Electrical degradation of N-channel poly-Si TFT under AC stress.

ELECTROCHEMICAL AND SOLID STATE LETTERS 8(9) H69-H71(2005)

(SCI:2.271)張鼎張

21.Zhou, JL; Wan, FX; Yu, KC; Ding, SW; Yang, NH; Ye, CH, Synthesis and relaxivity of neutral dimeric Gd(III) complexes derived from L-lysine with long chain alkyl

esters.CHINESE JOURNAL OF INORGANIC CHEMISTRY 21(8) 1237-1241 (2005) (SCI:0.6)丁尚武

22.Jeng, U; Hsu, CH; Sheu, HS; Lee, HY; Inigo, AR; Chiu, HC; Fann, WS; Chen, SH; Su, AC; Lin, TL; Peng, KY; Chen, SA,Morphology and charge transport in

poly(2-methoxy-5-(2 '-ethylhexyloxy)-1,4-phenylenevinylene) films.

MACROMOLECULES 38 (15) 6566-6574(2005) (SCI:3.898)

23.Chou, H; Hong, ZY; Sun, SJ; Juang, JY; Chang, WJ, Strong anisotrpoic maganetoresistance and magnetic interaction in

La0.7Ce0.3Mn0.3/La0.7Ca0.3MnO3 p-n junction. JOURNAL OF APPLIED PHYSICS 97 (10) Art. No. 10A308 Part 2(2005) (SCI:2.255) 周雄

24.Seo, HW; Chen, QY; Tu, LW; Hsiao, CL; Iliev, MN; Chu, WK, Catalytic

nanocapillary condensation and epitaxial GaN nanorod growthPHYSICAL REVIEW B 71(23) Art. No. 235314 (2005) (SCI: 3.075)杜立偉

25.Kuo, CT; Huang, SY; Jiang, IM; Tsai, MS, Multiguide directional coupler using switchable liquid-crystalline optical channels. JOURNAL OF APPLIED PHYSICS 97 (10) Art No. 103113 Part 1(2005) (SCI: 2.255)郭啟東

26.Lee, WY; Liang, LC, Organoaluminium complexes incorporating an amido phosphine chelate with a pendant arm.DALTON TRANSACTIONS (11)1952-1956 (2005) (SCI: 2.926)梁蘭昌

27.Chen, SH; Su, AC; Chen, SA, Noncrystalline phases in

poly(9,9-di-n-octyl-2,7-fluorene.JOURNAL OF PHYSICAL CHEMISTRY B

109(20) 10067-10072 (2005) (SCI: 3.834)

28.Ju, SP; Chang, JG; Lin, JS; Lin, YS, The effects of confinement on the behavior of water molecules between parallel Au plates of (001) planes JOURNAL OF CHEMICAL

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PHYSICS 122-15 Art No. 154707(2005) (SCI: 3.105)朱訓鵬

29. Pan, CT; Shen, SC; Hsieh, CC,Magnetically-actuated bending-mode microactuators with excimer laser ablation. PLASTICS RUBBER AND COMPOSITES 33(8) 338-342 (2004) (SCI: 0.412) 潘正堂

30.Fu, LM; Yang, RJ; Lin, CH; Chien, YS,Novel microfluidic mixer utilizing electrokinetic driving forces under low switching frequency. ELECTROPHORESIS 26(9)

1814-1824(2005) (SCI: 3.743)林信哲

31.Liang, LC; Lin, JM; Lee, WY,Benzene C-H activation by platinum(II) complexes of bis(2-diphenylphosphinophenyl)amide.CHEMICAL COMMUNICATIONS (19) 2462-2464 (2005) (SCI: 3.997)梁蘭昌

32.Chou, H; Tsai, MH; Ou, MN; Wu, MF; Hong, MT; Sun, SJ; Yu, YC,Increase in zero-field conductivity and low-field magnetoresistance by proton irradiated defects in

La0.67Sr0.33MnO3 films. JAPANESE JOURNAL OF APPLIED PHYSICS PART

1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 44(4A) 1742-1744 (2005)

(SCI:1.142) 周雄

33. Chang, TC; Yan, ST; Chen, YT; Liu, PT; Sze, SM,A novel distributed charge storage element fabricated by the oxidation of amorphous silicon carbide. ECTROCHEMICAL

AND SOLID STATE LETTERS 7( 11) G251-G253 (2004) (SCI:2.271)張鼎張

34.Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Tseng, TY,Effects of oxygen plasma ashing on barrier dielectric SiCN film. ELECTROCHEMICAL AND SOLID STATE LETTERS 8(1) G11-G13(2005) (SCI:2.271)張鼎張

35.Chang, TC; Liu, PT; Yan, ST; Sze, SM,Electron charging and discharging effects of tungsten nanocrystals embedded in silicon dioxide for low-voltage nonvolatile memory technology. ELECTROCHEMICAL AND SOLID STATE LETTERS 8(3)

G71-G73(2005) (SCI:2.271)張鼎張

36.Liu, PH; Ding, SW, Application of liquid crystalline NMR solvents to a mixture of ketones. JOURNAL OF THE CHINESE CHEMICAL SOCIETY 52(1) 1-4 (2005) (SCI:0.593)丁尚武

37.Ju, SP , A molecular dynamics simulation of the adsorption of water molecules surrounding an Au nanoparticle. JOURNAL OF CHEMICAL PHYSICS 122( 9) Art.

No.94718 (2005) (SCI: 3.105)朱訓鵬

38.Chang, TC; Liu, PT; Yan, ST; Yang, FM; Sze, SM, Memory effect of

oxide/oxygen-incorporated silicon carbide/oxide sandwiched structure. JOURNAL OF

THE ELECTROCHEMICAL SOCIETY 152 (2) G144-G147 (2005) (SCI:2.356)

張鼎張

39.Pan, CT; Cheng, PJ; Chen, MF; Yen, CK,Intermediate wafer level bonding and interface behavior. MICROELECTRONICS RELIABILITY 45 (3-4) 657-663 (2005) (SCI: 0.607) 潘正堂

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40.Liang, LC; Chien, PS; Huang, MH,Catalytic Suzuki coupling reactions by amido

phosphine complexes of palladium. ORGANOMETALLICS 24(3) 353- 357 (2005) (SCI: 3.196)梁蘭昌

41.Kuo, MC; Tsai, CM; Huang, JC; Chen, M, PEEK composites reinforced by nano-sized SiO2 and Al2O3 particulates. MATERIALS CHEMISTRY AND PHYSICS 90(1) 185-195 (2005) (SCI:1.113)黃志青

42.Pan, CT; Shen, SC,Magnetically actuated bi-directional microactuators with permalloy and Fe/Pt hard magnet. JOURNAL OF MAGNETISM AND MAGNETIC

MATERIALS 285(3) 422-432 (2005) (SCI: 1.031) 潘正堂

43. Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Wu, HH; Tseng, TY,Study on etching profile of nanoporous silica.THIN SOLID FILMS 469:377-382 Sp. Iss. SI (2004)

(SCI:1.647)張鼎張

44. Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Tseng, TY, Study on the effect of electron beam curing on low-K porous organosilicate glass (OSG) material. THIN SOLID FILMS 469 383-387 Sp. Iss. SI (2004) (SCI:1.647)張鼎張

45. Chen, CW; Liu, PT; Chang, TC; Yang, JH; Tsai, TM; Wu, HH; Tseng,

TY,Cu-penetration induced breakdown mechanism for a-SiCN. THIN SOLID FILMS 469 388- 392 Sp. Iss. SI (2004) (SCI:1.647)張鼎張

﹡2006:

1. Ju, SP; Weng, CI; Fang, KC; Lee, CS, A tight-binding molecular dynamics simulation analysis of carbon nanotube growth process parameters. JOURNAL OF

COMPUTATIONAL AND THEORETICAL NANOSCIENCE. 3(2):231-236 (2006) 朱訓鵬

2. Seo, HW; Chen, QY; Iliev, MN; Tu, LW; Hsiao, CL; Mean, JK; Chu, WK, Epitaxial GaN nanorods free from strain and luminescent defects. APPLIED PHYSICS LETTERS. 88(15): Art.No.153124 (2006) (SCI:4.308) 杜立偉

3. Dong, TY; Chang, SW; Lin, SF; Lin, MC; Wen, YS; Lee, L, Toward the development of molecular wires: A terpyridine spacer containing polyferrocenylalkyne linkages.

ORGANOMETALLICS1 25(8) 2018-2024(2006) (SCI: 3.196)董騰元

4. Shih, CC; Lin, YS; Wang, CY; Jiang, IM; Tsai, MS; Ting, CC; Horng, HE, Melting of mesoscopic lattices of magnetic fluid thin film subjected to perpendicular fields.

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 300(2): 306-314(2006)(SCI:

1.031)蔡民雄

5. Shen, SC; Pan, CT; Wang, YR; Chang, CC, Fabrication of integrated nozzle plates for inkjet print head using microinjection process. SENSORS AND ACTUATORS

A-PHYSICAL, 127(2):241-247 (2006)(SCI: 1.462)黃志青

6. Chang, SC; Lin, SC; Hsieh, KC, The formation and growth of intermetallic compounds in Sn-Zn and Sn-Zn-Al solder with Ni/Au surface finish bond pad. JOURNAL OF

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ELECTRONIC MATERIALS, 35(3): 399-405 (2006) (SCI: 1.507) 謝克昌

7. Li, LL; Lin, KJ; Ho, CJ; Sun, CP; Yang, HD, A coordination pi-pi framework exhibits spontaneous magnetization. CHEMICAL COMMUNICATIONS,(12): 1286-1288 (2006) (SCI: 3.997)楊弘敦

8. Tu, CH; Chang, TC; Liu, PT; Liu, HC; Chen, WR; Tsai, CC; Chang, LT; Chang, CY, Formation of silicon germanium nitride layer with distributed charge storage elements.

APPLIED PHYSICS LETTERS, 88(11) Art. No.112105(2006) (SCI: 4.308)張鼎張

9. Liang, LC; Chien, PS; Lin, JM; Huang, MH; Huang, YL; Liao, JH, Amido pincer complexes of nickel(II): Synthesis, structure, and reactivity. ORGANOMETALLICS,

25(6):1399-1411(2006) (SCI: 3.196)梁蘭昌

10. Chen, SH; Su, AC; Su, CH; Chen, SA, Phase behavior of

poly(9,9-di-n-hexyl-2,7-fluorene) JOURNAL OF PHYSICAL CHEMISTRY B

110(9):4007-4013 (2006) (SCI: 3.834)

11. Lo, I; Wang, WT; Gau, MH; Tsai, JK; Tsay, SF; Chiang, JC, Gate-controlled spin splitting in GaN/AIN quantum wells. APPLIED PHYSICS LETTERS 88(8):Art. No. 082108(2006) (SCI: 4.308)羅奕凱

12. Young, TF; Liu, TS; Jung, DJ; Hsi, TS, Microstructural and electrical studies of nitrogen doped diamond thin films grown by microwave plasma CVD.SURFACE &

COATINGS TECHNOLOGY, 200(10): 3145-3150(2006) (SCI: 1.432) 楊台發

13. Pan, CT; Cheng, PJ; Shen, SC; Chen, MF; Wang, RY; Chou, MC; Wu, TC,Applications of LIGA on micro-punching process for metallic materials. PROGRESS ON

ADVANCED MANUFACTURE FOR MICRO/NANO TECHNOLOGY 2005, PT 1 AND 2,

505-507:55-60(2006)潘正堂

14. Pan, CT; Cheng, PJ; Hwang, YM; Chen, MF; Chuang, HS; Yang, CT, Three-dimensional micro-flow measurement in a capillary with a diode laser

micro-particle image velocitmetry. PROGRESS ON ADVANCED MANUFACTURE FOR

MICRO/NANO TECHNOLOGY 2005, PT 1 AND 2,505-507:343-348(2006) 潘正堂

15. Shyu, RF; Pan, CT; Lin, SC, Parametric study of spherical micro-lens array.

PROGRESS ON ADVANCED MANUFACTURE FOR MICRO/NANO TECHNOLOGY

2005, PT 1 AND 2,505-507:595-600(2006)潘正堂

16. Ding, SW, A realistic potential model for N-H vector diffusion in proteins.JOURNAL OF

CHEMICAL PHYSICS, 124(7)Art. No.074902(2006) (SCI: 3.105)丁尚武

17. Liu, PT; Tsai, CT; Chang, TC; Kin, KT; Chang, PL; Chen, CM; Cheng, HF, Activation of carbon nanotube emitters by using supercritical carbon dioxide fluids with propyl alcohol.ELECTROCHEMICAL AND SOLID STATE LETTERS, 9(4):G124-126(2006) (SCI: 2.271)張鼎張

18. Chang, TS; Chang, TC; Liu, PT; Chang, TS; Yeh, FS, Integration issues for

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FILMS, 498(1-2):70-74(2006) (SCI: 1.647)張鼎張

19. Tsai, MN; Chang, TC; Liu, PT; Ko, CW; Chen, CJ; Lo, KM,Short-diode like diffusion capacitance of organic light emission devices.THIN SOLID FILMS, 498(1-2):244-248 (SCI: 1.647)張鼎張

20. Lee, CJ; Huang, JC; Hsieh, PJ,Mg based nano-composites fabricated by friction stir processing. SCRIPTA MATERIALIA, 54(7)1415-1420 (2006) (SCI: 2.112) 黃志青 21. Lo, I; Tsai, JK; Yao, WJ; Ho, PC; Tu, LW; Chang, TC; Elhamri, S; Mitchel, WC; Hsieh,

KY; Huang, JH; Huang, HL; Tsai, WC, Reply to "Comment on 'Spin splitting in modulation-doped AlxGa1-xN/GaN heterostructures' ".PHYSICAL REVIEW B 73(3):Art. No. 037302 (2006) (SCI: 3.075)羅奕凱

22. Jang, JSC; Tsao, SF; Chang, LJ; Chen, GJ; Huang, JC, Crystallization kinetics of the Zr61Al7.5Cu17.5Ni10Si4 alloy using isothermal DSC and TEM observation. JOURNAL

OF NON-CRYSTALLINE SOLIDS,352(1):71-77(2006) (SCI: 1.433)黃志青

23. Lo, I; Wang, WT; Gau, MH; Tsay, SF; Chiang, JC, Wurtzite structure effects on spin splitting in GaN/AlN quantum wells. PHYSICAL REVIEW B, 72(24):Art. No.

245329(2005) (SCI: 3.075)羅奕凱

24. Lee, GB; Lin, CH; Lee, KH; Lin, YF, On the surface modification of microchannels for microcapillary electrophoresis chips.ELECTROPHORESIS, 26(24):4616-4624(2005) (SCI: 3.743)