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高介電常數材料的特性分析及其在多晶矽奈米線非揮發性記憶體之應用

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Fig. 2.1.  Key fabrication steps of an MOS capacitor. (a) Start with a bare silicon  substrate
Table 2.1.  Potential candidates for gate dielectric of future CMOS technology. .……  17  Table 2.2
Table 2.1.    Potential candidates for gate dielectric of future CMOS technology.
Table 3.1.    Film composition of different splits of the MOS capacitors.
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