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沉積後電漿處理對二氧化鉿金氧半導體結構電特性之影響

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Table 1-1 High-performance Logic Technology Requirements Roadmap.
Table 1-2 Characteristics of various high-k materials.
Fig. 1-2 Measured and simulated I g -V g characteristics under inversion condition for  nMOSFETs
Fig. 1-4    Jg,limit versus Jg,simulated for Low Operating Power ( ITRS: 2005  update )
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