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EFFECTS OF N2O-PLASMA TREATMENT OF A-SIOXNY/A-SINX GATE INSULATORS ON ELECTRICAL STABILITY OF A-SIH THIN-FILM TRANSISTORS

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Effects of N2O-Plasma Treatment of a-SiOxNy/a-SiNx Gate Insulators on Electrical Stability

of a-Si:H Thin-Film Transistors

View the table of contents for this issue, or go to the journal homepage for more 1994 Jpn. J. Appl. Phys. 33 L977

(http://iopscience.iop.org/1347-4065/33/7B/L977)

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