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Effects of N2O-Plasma Treatment of a-SiOxNy/a-SiNx Gate Insulators on Electrical Stability
of a-Si:H Thin-Film Transistors
View the table of contents for this issue, or go to the journal homepage for more 1994 Jpn. J. Appl. Phys. 33 L977
(http://iopscience.iop.org/1347-4065/33/7B/L977)