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高效率薄膜太陽能電池之元件製作與分析

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Figure 2.2 The current-voltage (I-V) characteristics of thin film solar cells under illumination
Figure 2.3-2 Variation of junction capacitance with alternation voltage drive level
Figure 3.1 shows current-voltage characteristics of amorphous silicon thin film solar cells under standard illumination conditions
Figure 3.2(a) Capacitance vs. dc bias for μc-Si window layer of solar cell. The measuring frequency is 100Hz and the temperature is 300K.The amplitude of the alternating voltage is 25mV、50 mV、75 mV、100 mV, respectively
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Thin Film Solar Cells Material Structure Fabrication and measurement for amorphous silicon thin film solar Fabrication and measurement for microcrystalline silicon thin film Conclusion

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