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Smooth Pole Tracking Technique by Power MOSFET Array in Low-Dropout Regulators

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Array in Low-Dropout Regulators

Yung-Hsin Lin, Kuo-Lin Zheng, and Ke-Horng Chen

Abstract—This paper proposes an advanced -reduction tech-nique of pole-splitting compensations for low dropout (LDO) regulator. The output pole is load dependent and may cause the scenario of complex poles when load current changes. LDO regu-lators may oscillate because high- incurs the less gain and phase margins. The reasons of causing complex poles depend on the de-sign methodology. For the dede-sign of capacitor-free LDO regulator, high- issue happens when load current changes from heavy to light. Recent literature provides a method to alleviate the high-problem. However, large dropout voltage in case of suddenly large loads forces designers to include a small load capacitor as an indis-pensable component for supplying system-on-chip (SoC) systems. Different to the case of capacitor-free LDO regulators, high-issue happens when load current changes from light to heavy. According to our proposed power MOSFET array, the high-problem can be alleviated and prevent LDO regulators from oscillating when load changes. Experimental results promise the stability and show the improvement of load and line regulations.

Index Terms—Capacitor-free, complex pole, low-dropout regu-lator (LDO), power MOSFET array, -reduction.

I. INTRODUCTION

T

HE low-dropout regulator (LDO) architecture compen-sated by the pole-splitting technique is shown in Fig. 1. For pole-splitting compensation techniques, we need to im-plement multistage operational amplifier to have an equivalent large Miller capacitance at the first stage output for generating a dominant pole. The outputs of the cascading stages contribute the non-dominant poles in sequence. In other words, the char-acteristics of LDO regulators with pole-splitting compensation are larger low-frequency gain and higher crossover frequency. Recently, the design of a capacitor-free LDO regulator [2], [3] is increasingly requisite for every battery-operated device because it has the advantages of lower usage of printed circuit board (PCB) space and fewer off-chip components. Owing to the non-dominant complex poles locate near unit gain fre-quency (UGF), large value causes a sharper phase change at the angular corner frequency [1]. The LDO will become unstable because frequency peaking near UGF makes less gain and phase margin [4]. An advanced -reduction technique [1] is proposed to solve the oscillation problem when load current changes from heavy to light.

Manuscript received October 15, 2007; revised January 10, 2008. Current ver-sion published November 21, 2008. Recommended for publication by Associate Editor J. Shen. This research was supported by the National Science Council, Taiwan, under Grant NSC 96-2221-E-009-240.

The authors are with the Department of Electrical and Control Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (e-mail: khchen@cn. nctu.edu.tw).

Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org.

Digital Object Identifier 10.1109/TPEL.2008.2002053

Fig. 1. Location of poles in a capacitor-free LDO regulator with pole-splitting compensation and in a LDO regulator with a small output capacitor. The first non-dominant pole(p ) is changed from the output of the output of second stage (p - ) to the output of the last stage. The second non-dominant pole (p ) is located at the gate of power MOSFET.

Furthermore, the critical problem of a capacitor-free LDO regulator is low driving capability when load current changes within a short time. For sudden load variations within a short time, the output voltage is drastically pulled down or up to an unacceptable voltage for system-on-chip (SoC) systems. Direct current feedback [5] is proposed to dynamically basing the LDO regulator for alleviating the slewing problem of operational am-plifier. As we know, the current sensor [5] suffers from low ac-curacy when load current is too low to make the current sensor work correctly. Thus, for a stable supplying source for SoC sys-tems, an output capacitor is sometimes needed at the output node of a LDO regulator for prevent the output voltage from pulling too high or low [6].

Owing to the small output capacitor, the output pole substi-tutes the pole at the second stage output as the first non-dom-inant pole. Thus, the frequency response of this architecture is different from that of capacitor-free LDO regulators. It means that the advanced -reduction proposed by literature [1] is not useful for this design. On the contrary, we have to find out an-other -reduction to improve the stability of LDO regulators in case of load variations.

Most importantly, the Miller-compensated LDO regulator with an output capacitor not only have the capability to react to sudden load variations but also not is limited to a minimum load current because of equivalent series resistance (ESR) zero provided by output capacitor. As just alluded, the two separate non-dominant poles may become complex poles with a high value or small damping factor when the output current changes from low to high. It is similar to the case when the output current changes from high to low in the capacitor-free LDO regulator. In other words, large variation of the load current may cause the output voltage to have a drastic voltage drop owing to the lack of a large output capacitor. It causes malfunction in SoC

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Fig. 2. High-Q problem happened in the LDO regulator with small output ca-pacitor.

systems. Thus, an output capacitor is requested to ensure min-imized transient voltage variation for supplying SoC systems. To make a summary, a suitable LDO regulator for supplying SoC systems has to use a high-gain multistage operational amplifier for improving load and line regulations and an output capacitor for alleviating the drastic transient voltage variation. Certainly, high- problem is different to that of capacitor-free LDO regulator design due to the first non-dominant contributed by the low-frequency pole at the output node in Fig. 1.

The first non-dominant pole, which is located at output of the last stage, moves to high frequency at heavy load. Thus, the occurrence of complex poles, which is shown in Fig. 2, may happen when load current changes from light to heavy. Thus, the only way for us to avoid high problem is to make the second non-dominant pole adapt to the first non-dominant pole moving to higher frequency [6]. The smooth tracking of the second non-dominant pole is important because it may cause the phase margin less than that of LDO regulator without pole tracking technique. In other words, a worse pole tracking technique may cause the LDO regulator unstable when load changes. There-fore, we propose a smooth pole tracking technique [7], [8] to reduce the high problems in an LDO regulator with a small output capacitor.

In this paper, an LDO with smooth pole tracking targeted for SoC will be proposed. The key feature is to alleviate the tran-sient dropout voltage and the possibility of oscillation with a smooth pole tracking technique. Advanced circuit implemen-tation of the pole tracking circuit will then be introduced and discussed. Finally, experimental results will be given to verify the theory.

II. CIRCUITIMPLEMENTATION OFPOWERMOSFET ARRAY

In order to maintain a stable LDO regulator over a wide load current range, a pole tracking technique is utilized to force the first non-dominant pole to track the load variations. Besides, the pole tracking technique also moves the second non-dominant pole to a high frequency associated with the loading variations in order not to affect the stability of the system. Even that the complex poles occurred at high frequency, the stability of the LDO regulator is still promised.

A. Implementation of the Simple Pole Tracking Technique

A simple scheme of pole tracking technique is shown in Fig. 3

Fig. 3. Simple pole-tracking technique proposed by [6].

Fig. 4. Loci of the first and second non-dominant poles reveal the unstable condition caused by incorrect pole tracking technique.

Fig. 5. Equivalent power MOSFET array with smooth pole tracking technique.

asing current for reducing the equivalent resistance seen at the gate of power MOSFET when load current changes from light to heavy. In other words, it makes the second non-dominant pole at the gate of power MOSFET moves to higher frequency at heavy load current. This pole tracking can alleviate the complex pole problem, which is shown in Fig. 4. The reason is that the location of high is located at a higher frequency than that of a LDO regulator without pole tracking technique. The loci of the first and second non-dominant poles are shown in Fig. 4. The less phase margin may happen when load cur-rent changes from heavy to light because the location of the first non-dominant pole is below the unit-gain frequency. It may cause the LDO regulator unstable. The locations of the first and second non-dominant poles are also listed in Fig. 4 to illustrate the scenario of less phase margin owing to the load current variations.

B. Implementation of the Equivalent Power MOSFET Array

In order to solve this problem, an equivalent power MOSFET array with smooth pole tracking technique is proposed in Fig. 5.

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Fig. 6. Small signal circuit of a single power MOSFET stage.

power MOS transistors with different aspects to each other for smoothly providing current to load. Resistor decides the biasing current of the power MOSFET stage. Besides, the turn-on/off sequence of the three power MOS transistors is con-trolled by three switches, which are transistors . The resistors are designed to have the same size because we determine the on/off sequence of power MOSFET only by scaling the sizes of switches .

The power MOSFET array makes the power stage be turned on/off in a proper sequence to achieve smooth pole tracking. Basically, the turn-on sequence is from the large power MOS transistor to the small power MOS transistor and the turn-off se-quence is from the small size power MOS transistor to the large size power MOS transistor. The relationship between power MOS transistors and switches are based on a rule that a large power MOSFET is driven by a small switch and a small power MOSFET is driven by a large switch. In other words, the smaller switch can slow down the driving speed of large power MOS transistor for alleviating the large inrush current. It can prevent the operating point at the gate of power MOSFET is over-esti-mated. Contrarily, a large switch can speed up the turn-on/off of smaller power MOS transistors. Besides, resistors and are used to pull low the gate voltages at and to en-hance the driving capability of the two power MOSFETs. The selection of the values of resistors , , and depend on the location of the second non-dominant pole to avoid oscillating at light loads. Finally, the first non-dominant pole can be smoothly moved to higher frequency and back to lower frequency. It means that the phase margin is always enough to avoid incurring the unstable condition.

C. Design Methodology of the Power MOSFET Array for Achieving Smooth Pole Tracking Technique

The analysis of the power MOSFET array can be simplified by modeling one MOSFET stage in Fig. 6 at first. Two equiva-lent capacitances and are used to express the input and output capacitances seen at input and output nodes, respectively. Resistance is composed of due to diode connected MOSFET switch and resistor . The value of resistance is written as

(1) Beside, the input impedance of a single stage is

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Fig. 7. Small signal circuit of power MOSFET array that contains two power MOSFET stages.

Thus, if the power MOSFET array contains two stages, the small signal can be expressed in Fig. 7. and are the equiv-alent input impedances seen at the gates of the first and second power MOSFET stages, respectively. The values of and

can be expressed by (3) and (4), respectively

(3)

(4)

From (4), there are two poles in this transfer function. The is at the output node and written as (5). As we expect, the is the first non-dominant pole see at the output of the whole LDO system. The second pole can be derived and proportional to (6)

(5)

(6) Assume that the orders of and are probably equal to those of and , respectively. The second pole can be approximated as (7) because resistors and are much less than and is less than

(7) The second pole contributes a second non-dominant pole to the whole LDO system. However, the power-on sequence of the power MOSFET array is from the power MOSFET with large size to the power MOSFET with small size. Thus, it means that we have to move this second non-dominant pole a high fre-quency. According to (7), the design methodology is expressed as (8).

if (8)

Similarly, we can derive the transfer functions of the smooth pole-tracking structure that is composed of three power MOSFET stages in Fig. 5. If the input signal of power MOSFET array is at node , we can express the voltages of and

by (9) and (10)

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(10) Then, the transfer function can be expressed as shown in (11) at the bottom of the page.

The transfer function contains a second order denominator coefficient. Thus, we need to determine the positions of the two non-dominant poles. Similarly, the design methodology infers to a conclusion, which is expressed by (12)

if (12)

Based on (12), the power MOSFET array can provide a smooth pole tracking mechanism in case of load variations. A larger power MOSFET is turned on prior to the smaller power MOSFET or vice versa. The inrush current is alleviated by the smaller switch for the large power MOSFET. The turn-on sequence of the switches can be determined by (12) when load current changes. Therefore, the relationship between power MOS transistors and switches are based on a rule that a large power MOSFET is driven by a small switch and a small power MOSFET is driven by a large switch. The overestimation condition is eliminated by our proposed power MOSFET array. The following subsection will discuss the design methodology of the values of and .

D. Decision of the Values of and in the LDO Regulator

We adapt our proposed power MOSFET array to an LDO reg-ulator with a four-stage error amplifier as an experimental cir-cuit to decide the values of and . The architecture of the four-stage LDO regulator is shown in Fig. 8. In order to main-tain the stability, we should determine the location of poles for different load conditions. At very light load condition, based on Miller compensation, there are two separate poles, which are expressed by (13) and (14). Owing to the frequency of the first non-dominant pole is higher than that of the crossover fre-quency. It means that the system has an enough phase margin. Certainly, the second non-dominant that is contributed by the gate capacitance of the power MOSFET is far away from these two poles

(13) (14)

Basically, the transfer function can be easily derived and shown in (15) at the bottom of the next page. As we know, the

Fig. 8. LDO regulator that is composed of four gain stages is improved by the proposed power MOSFET array for achieving smooth pole tracking.

increased first non-dominant pole and the decreased second non-dominant pole form the complex poles when load current increases. It is obvious that the left term at the denominator contributes a dominant pole. Besides, the right term at the denominator is a second order polynomial and determines the existence of the complex poles. The existence condition of the complex poles is expressed by (16) shown at the bottom of the next page. The frequency of the complex poles and the -factor are described by (17) and (18), respectively, shown at the bottom of the next page.

The value of the transconductance is gradually in-creased by the conduction condition of the power MOSFET array. Owing to the increase of transconductance con-tributed by the smooth pole-tracking technique, it makes sure that the complex poles is at higher frequency than that of conventional design. Importantly, the increase of the -factor is also proportional to the value of . In other words, the transition from light load condition to heavy load condition, the value of the -factor is smoothly and slightly increased when we compare it to the high- condition occurred in the design with the simple pole-tracking technique. However, according to (18), the decreasing output impedance of the third stage effectively dominates the value. It makes sure that the high- condition will not happen in the proposed smooth pole tracking technique. In other words, the high- problem can be alleviated. The simulation results of the loop gain demonstrate the correctness of the analysis in Fig. 9.

The root loci of simple pole tracking and our proposed pole tracking techniques are shown in Fig. 10. The root locus of our proposed technique reveals that a high frequency complex pole is achieved compared to the low frequency complex pole in simple pole tracking technique [9]. It means that our proposed

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Fig. 9. Frequency response of closed loop-gain of the LDO with the proposed smooth pole tracking technique. (Curve A and B are simulated at load current equal to 1 and 400 mA, respectively).

Fig. 10. Root loci of two types of pole tracking. (a) With simple pole tracking technique. (b) With our proposed pole tracking technique.

pole tracking can alleviate the high- problem in LDO regu-lators with a small output capacitor. It is obvious that we can use this power MOSFET array to substitute the power MOSFET of the LDO regulator with a small output capacitor. Therefore, the pole at the gate of power MOS transistor can have a good tracking with the pole at the output of the LDO regulator.

III. EXPERIMENTALRESULTS

The proposed LDO was fabricated in TSMC double-poly quadruple-metal 0.35- m CMOS technology. The threshold voltages of nMOSFET and pMOSFET are 0.55 and 0.65 V, respectively. The chip micrograph is shown in Fig. 11 and the total silicon area is about 1315 m 1430 m, including the testing pads. The LDO can operate from 3.6 to 4.7 V with a

Fig. 11. Micrograph of chip.

regulated output voltage of 3.3 V. The dropout voltage at output current of 400 mA is 200 mV. The maximum ground current is about 100 A at 4.7 V.

Load transient response with off-chip capacitor 1 F at 3.6 V has been tested to verify the stability of the proposed LDO. As shown in Fig. 12, the LDO output voltage has no oscillation when the load current changes from 100 uA to 400 mA in 1 s or vice versa. The performance of transient response is critical in case of load variations. In order to achieve the better load transient response, the overshoot and undershoot voltages should be reduced to reasonable values. Moreover, the response time should be speed up to meet the specification of SoC systems.

Fig. 12(a) and (b) show the simple pole tracking result and the proposed smooth pole tracking result, respectively. When load current changes from light load to heavy, the dropout voltage of the smooth pole tracking is reduced from 10 mV got by simple pole tracking technique to 6.5 mV, which is shown in Fig. 12. While changing from heavy load to light load, the over-shoot voltage of the smooth pole tracking technique is reduced from 47 to 5.5 mV. Importantly, there is no unstable condi-tion occurred in our proposed technique at right-hand side of Fig. 12(b). However, we can find the scenario occurred in simple tracking technique at right side of Fig. 12(a). Furthermore, the transient response time is reduced from 52 to 7 s. Smooth pole tracking technique promises low output ripples and small tran-sient response time.

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(16) (17)

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Fig. 12. Comparison of load transient response between smooth pole tracking and simple pole tracking techniques. Load current changes from 0.1 to 400 mA or vice versa. (a) With simple pole-tracking technique. (b) With the proposed smooth pole-tracking technique.

Fig. 13. Comparison of line transient response between smooth pole tracking and simple pole tracking techniques. Input voltage changes from 3.6 to 4.7 V or vice versa. (a) With simple pole-tracking technique. (b) With the proposed smooth pole-tracking technique.

Line transient response is illustrated in Fig. 13 when the input supply voltage changes from 3.6 to 4.7 V in 5 s or vice versa. Both the results of output ripples are smaller than 1.8 mV. A summary of the proposed LDO regulator design parameters is shown in Table I.

IV. CONCLUSION

This paper proposes an equivalent power MOSFET array with a smooth pole tracking technique in low-dropout linear regu-lator. The power MOSFET array is turned on/off in a proper sequence to suppress the output ripples when a sudden

varia-also provides a smooth pole tracking technique by tracking the load-dependent first non-dominant pole smoothly for alleviating the high-Q problem. The new proposed smooth pole tracking technique presents low output ripples and fast response time compared to conventional simple pole tracking technique. Ex-perimental results promise the stability and show the improve-ment of load and line regulations.

ACKNOWLEDGMENT

The authors would like to thank Chunghwa Picture Tubes, LTD, for their help.

REFERENCES

[1] S. K. Lau, P. K. T. Mok, and K. N. Leung, “A low-dropout regulator for SoC with Q-reduction,” IEEE J. Solid-State Circuits, vol. 42, no. 3, pp. 658–664, Mar. 2007.

[2] K. N. Leung and P. K. T. Mok, “A capacitor-free CMOS low-dropout regulator with damping-factor-control frequency compensation,” IEEE

J. Solid-State Circuits, vol. 38, no. 10, pp. 1691–1702, Oct. 2003.

[3] G. Palumbo and S. Pennisi, “Design methodology and advances in nested-Miller compensation,” IEEE Trans. Circuits Syst. I, Reg.

Pa-pers, vol. 49, no. 7, pp. 893–903, Jul. 2002.

[4] K. N. Leung and P. K. T. Mok, “Analysis of multi-stage ampli-fier—Frequency compensation,” IEEE Trans. Circuits Syst. I, Reg.

Papers, vol. 48, no. 9, pp. 1041–1056, Sep. 2001.

[5] Y.-H. Lam, W.-H. Ki, and C.-Y. Tsui, “Adaptively-biased capacitor-less CMOS low dropout regulator with direct current feedback,” in

Proc. Design Autom. Asia South Pacific Conf., Jan. 2006, pp. 104–105.

[6] K. Wong and D. Evans, “A 150 mA low noise, high PSRR low-dropout linear regulator in 0.13m technology for RF SoC applications,” in

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[8] H. Pan, C. H. Cheng, and C. L. Chen, “A CMOS low dropout regulator stable with any load capacitor,” Proc. IEEE TENCON, pp. 266–269, 2004.

[9] P. Gray, P. J. Hurst, S. H. Lewis, and R. G. Meyer, Analysis and Design

of Analog Integrated Circuits, 4th ed. New York: Wiley, 2001.

Yung-Hsin Lin was born in Taipei, Taiwan. She re-ceived the B.S. degree in electronic engineering from Fu Jen Catholic University, Taiwan, in 2005, and the M.S. degree in electrical and control engineering from National Chiao Tung University, Taiwan, in 2007.

She is currently engaged in power management IC design.

engineering from National Chiao Tung University, Hsinchu, Taiwan, in 2008.

He had been with G-Time Electronic Co., Ltd, Hsinchu, Taiwan, from 2004 to 2006. His research interests include power management system designs, analog integrated circuits for portable devices, and familiars with low dropout linear regulator.

Ke-Horng Chen received the B.S., the M.S., and the Ph.D. degrees in electrical engineering from National Taiwan University, Taiwan, in 1994, 1996, and 2003, respectively.

He is an Assistant Professor with the Department of Electrical and Control Engineering, National Chiao Tung University, Hsinchu, Taiwan. He or-ganized a mixed signal and power management IC Laboratory, National Chiao Tung University. He was a part-time IC designer in Philips, Taipei, Taiwan, from 1996 to 1998. He was an Application Engineer with Avanti, Ltd, Taiwan, from 1998 to 2000. From 2000 to 2003, he was a Project Manager with ACARD, Ltd., where he worked on the designs of the power management IC. His current research interests include power management IC, mixed-signal circuit designs, display algorithm and driver designs of LCD TV, RGB color sequential backlight designs for OCB panels, and low-voltage circuit designs. He has published more than 25 papers in journals and conferences, and also holds several patents.

數據

Fig. 1. Location of poles in a capacitor-free LDO regulator with pole-splitting compensation and in a LDO regulator with a small output capacitor
Fig. 2. High- Q problem happened in the LDO regulator with small output ca- ca-pacitor.
Fig. 7. Small signal circuit of power MOSFET array that contains two power MOSFET stages.
Fig. 8. LDO regulator that is composed of four gain stages is improved by the proposed power MOSFET array for achieving smooth pole tracking.
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