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利用主動層優化降低氮化鎵發光二極體效率下降特性之研究

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Table 4.6.1 IQE of InGaN/GaN, LT-GaN and without prestrain layers LEDs……....36  Table  4.7.1  Output  power  enhance  and  efficiency  decrease……………………….36
Figure 1.1 The bandgap diagram of compound semiconductor materials.
Figure 1.2 The schematic of typical p-side up GaN-based LED
Fig. 3.3.1 shows the schematic of low electroluminescence measurement systems.  A set of instruments including current source Kiethley 238, a microscope to observe
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