• 沒有找到結果。

利用奈米圖型化基板製作高效率氮化鎵發光二極體

N/A
N/A
Protected

Academic year: 2021

Share "利用奈米圖型化基板製作高效率氮化鎵發光二極體"

Copied!
87
0
0

加載中.... (立即查看全文)

全文

Loading

數據

Fig. 1-1 The air/GaN interface and the totally internal reflect.
Fig. 1-3 Top and cross-sectional view SEM images of a PSS by wet etching
Fig. 2-6 shows the Raman scattering spectrum for the laser light incident normal to
Fig. 2-1 Schematic diagram of a scanning electron microscope
+7

參考文獻

相關文件

• QCSE and band-bending are induced by polarization field in C-plane InGaN/GaN and create triangular energy barrier in active region, which favors electron overflow. •

Optim. Humes, The symmetric eigenvalue complementarity problem, Math. Rohn, An algorithm for solving the absolute value equation, Eletron. Seeger and Torki, On eigenvalues induced by

Nowadays Nan-Gan Island and Bei-Gan Island are in Matsu archipelago called Gan-Tang-Shan by Ming Dynasty. Gan-Tang-Shan located on the sea out Min-Jiang estuary in Fu-Jian Province

In this thesis, we present a Threshold Jumping (TJ) and a Warp-Around Scan (WAS) techniques aim to coordinate simultaneous communications in high density RFID

This thesis will focus on the research for the affection of trading trend to internationalization, globlization and the Acting role and influence on high tech field, the change

We use the TracePro software to establish the basic configuration and simulate the results。The LED light source distance and the incident light angle were first investigated

GaN transistors with high-power, High temperature, high breakdown voltage and high current density on different substrate can further develop high efficiency,

This thesis studies how to improve the alignment accuracy between LD and ball lens, in order to improve the coupling efficiency of a TOSA device.. We use