• 沒有找到結果。

高性能離子感應電晶體之可靠度研究及應用

N/A
N/A
Protected

Academic year: 2021

Share "高性能離子感應電晶體之可靠度研究及應用"

Copied!
107
0
0

加載中.... (立即查看全文)

全文

Loading

數據

Table 2-Ι. Sensitivities and test range for different sensing membranes.
Figure 2-1 The similarities and differences between MOSFET and ISFET devices. It  can be seen that the reference electrode, the aqueous solution and the  phenomena occurring at the oxide-solution interface must be accounted for  instead of Φ M /q
Figure 2-2 Potential profile and charge distribution at an oxide electrolyte solution  interface (After Siu et al., Ref
Figure 2-3 Schematic representation of site-dissociation model.
+7

參考文獻

相關文件

Then, it is easy to see that there are 9 problems for which the iterative numbers of the algorithm using ψ α,θ,p in the case of θ = 1 and p = 3 are less than the one of the

From the perspective of promoting children’s learning, briefly comment on whether the objectives of the tasks were achieved with reference to the success criteria listed in the

Microphone and 600 ohm line conduits shall be mechanically and electrically connected to receptacle boxes and electrically grounded to the audio system ground point.. Lines in

To reduce the leakage current related higher power consumption in highly integrated circuit and overcome the physical thickness limitation of silicon dioxide, the conventional SiO

To reduce the leakage current related higher power consumption in highly integrated circuit and overcome the physical thickness limitation of silicon dioxide, the conventional SiO 2

Wet chemical etchings are especially suitable for blanket etches (i.e., over the whole wafer surface) of polysilicon, oxide, nitride, metals, and Ⅲ-Ⅴ compounds. The

The bottleneck stations with multiple machines are generally in the industry, such as semiconductor wafer manufacturing plants, IC substrate manufacturing plants,

“Polysilicon Thin Film Transistors Fabricated at 100℃ on a Flexible Plastic Substrate,” IEEE Electron Device Meeting, p. “Polysilicon Thin Film Transistors