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低電壓互補式金氧半製程下的類比電路設計與可靠度

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Fig. 1.1. Formation of traps in the gate oxide of MOS transistor.
Fig. 1.3. Increased traps in gate oxide of MOS transistor after Conduction.
Fig. 1.7. The cross section of the NMOSFET structure and drain leakage components [28]
Fig. 2.2. The new proposed bandgap reference circuit for sub-1-V operation.
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