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沉積後電漿處理與退火製程對二氧化鉿熱穩定性之影響

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Fig. 1-1 Conduction mechanism in oxide for the MOS structure.
Fig. 1-6 Jg,limit versus Jg,simulated for Low Operating Power    ( ITRS: 2005 update )
Fig. 1-7 Jg,limit versus Jg,simulated for Low Standby Power  ( ITRS: 2005 update )
Fig 2-2 The ICP plasma system that was used in this experiment.
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