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Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method

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Analysis of Influence of Alkyl Sources on Deep Levels in GaN by Transient Capacitance

Method

View the table of contents for this issue, or go to the journal homepage for more 1996 Jpn. J. Appl. Phys. 35 L810

(http://iopscience.iop.org/1347-4065/35/7A/L810)

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