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CHARACTERIZATION OF IMPROVED ALGAAS/GAAS RESONANT TUNNELING HETEROSTRUCTURE BIPOLAR-TRANSISTORS

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Characterization of Improved AlGaAs/GaAs Resonant Tunneling Heterostructure Bipolar

Transistors

View the table of contents for this issue, or go to the journal homepage for more 1991 Jpn. J. Appl. Phys. 30 L160

(http://iopscience.iop.org/1347-4065/30/2A/L160)

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