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使用 0.18um CMOS 實現多頻帶之電壓控制環型振盪器

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國立交通大學

電機與控制工程學系

碩士論文

使用 0.18 um CMOS 實現多頻帶之電壓控

制環型振盪器

Implementation of a Multi-band Voltage-Controlled

Ring Oscillator Using 0.18 um CMOS

研 究 生:鄭國偉

指導教授:鄭木火博士

中華民國九十四年十月

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使用 0.18 um CMOS 實現多頻帶之電壓控制環

型振盪器

Implementation of a Multi-band Voltage-Controlled Ring

Oscillator Using 0.18 um CMOS

研究生:鄭國偉 Student:Kuo-Wei Cheng

指導教授:鄭木火 Advisor:Mu-Huo Cheng

國立交通大學

電機與控制工程學系

碩士論文

A Thesis

Submitted to Department of Electrical and Control Engineering

College of Electrical Engineering and Computer Science

National Chiao Tung University

in Partial Fulfillment of the Requirements

for the Degree of Master

in

Electrical and Control Engineering

Oct. 2005

Hsinchu, Taiwan, Republic of China

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Uà 0.18µm CMOS õÛÖä5Ú9−„=

PÓÂ

û˝Þ: wÅQ

Nû`¤: wƒÊ²=

Å >¦×çÚœD−„ ˙çÍ

¿b

…dT|ø_xÖäíÚ9−„=PÓ (Voltage-Controlled Ring Oscillator) øOxÖ½˜ (multiple-pass) í=PÓÂ, ×·uqlÊT¯PÓÂíPÓä0 …d‚ àÖ½˜h1, ql|ªJUwPÓä0ÁMí©Qj Í(y‚à NMOS TÑÇÉÚ˜, ø ‹0PÓä0íÖ½˜PÓÂÚ˜DÁMPÓä0íÖ½˜PÓÂÚ˜!¯Êø– â NMOS ÇÉí~² Z‰Ú˜í©Q˜, प)ƒy×íä0|c¸ˇ5PÓÚ˜ â¤ql, ©øÏ [×£FÛÇÉuÛUà 12 å MOS Úñ, w2 8 å u NMOS £ 4 åu PMOS … d1J«É ñÚ˜`¨$MÌt− (TSMC) 0.18 µm 1P6M CMOS `˙V_ÒøÖ 

ύ[×íÚ9−„=PÓ â(«_Ò!‹ (Post-Sim) éý, Ê TÚ9Ñ 1.8V -, ¤P

ÓÂí¾Š0Ñ 91.4 mW, Ê2-ä0Ñ 2GHz, Rä0 1MHz 8”-, óPÆmÑ -115.8

dBc/Hz, PÓä0¸ˇª®ƒ 0.32GHz-1.8GHz, w|í¼ú¼ (peak-to-peak) PÙ|üM ªB 1.67V

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Implementation of a Multi-band Voltage-Controlled

Ring Oscillator Using 0.18µm CMOS

Student: Kuo-Wei Cheng

Advisor: Dr. Mu-Huo Cheng

Institute of Electrical and Control Engineering

National Chiao-Tung University

Abstract

This thesis presents a multi-band voltage-controlled ring oscillator via the multiple-pass connection, resulting in a wide range of oscillation frequency. Most multiple-multiple-pass ring oscillators are designed to increase the oscillation frequency. In this thesis, we also exploit the concept of multiple-pass to design a multiple-pass ring oscillator which can decrease the oscillation frequency. A connection is designed via the NMOS switch to combine together the two circuits all via the concept of multiple-pass such that a wider range of oscillation frequency can be obtained. Hence, we obtain a voltage-controlled oscillator with two frequency bands which can be easily controlled by the on/off of the NMOS switches. We design a nine-stage ring oscillator; each stage consists of twelve MOS transistors including eight NMOS transistors and four PMOS transistors. This oscillator is simulated using 0.18 µm, 1P6M CMOS technology provided by Taiwan Semi-Conductor Manufacturing Company. The post simulation of the design oscillator, under the supply voltage of 1.8 V, shows that the required power is 91.4 mw, the phase noise is -115.8 dBc/Hz at a 1-MHz offset from a 2-GHz center frequency, the frequency tuning range is from 0.32GHz to 1.8GHz, and the minimum peak-to-peak output swing is 1.67V.

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ñ“

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(8)

Çñ“

Ç 2.1 úCMOS ¥óÂ5=PÓ . . . 3 Ç 2.2 úCMOS ¥óÂ5=PÓÂÜ;|š . . . 4 Ç 2.3 f$üCMOS =PÓÂÚ˜ . . . 4 Ç 2.4 Réôb-Z5ý<Ç . . . 5 Ç 2.5 pšíªœ . . . 5 Ç 2.6 Réôb=PÓ . . . 6 Ç 2.7 Uàf$üCMOS =Pӝ|š . . . 6 Ç 2.8 xRéôb-Z5PÓÂü|š . . . 7 Ç 2.9 ύ|5=PÓÂ-Z . . . 7 Ç 2.10 xª‰ŠÚ®íύú . . . 8 Ç 2.11 Ç2.4íš^Ú˜ . . . 9 Ç 2.12 xŠÚ®PÓÂ5øÚ˜. . . 9 Ç 2.13 ü-Z-−„Ú9Dä0É[ . . . 10 Ç 2.14 Êä0Ñ2.84GHz v5|š . . . 11 Ç 2.15 ‚àMOS ¯#−„ä05ôb-Z . . . 11 Ç 2.16 −„Ú9Dä0É[ . . . 12 Ç 2.17 Ö½˜-Z . . . 13 Ç 2.18 Ö½˜5ÕGÇ . . . 13 Ç 2.19 -Zý<Ç . . . 14 Ç 2.20 Ö½˜PÓÂ5Ú˜ý<Ç . . . 15 Ç 2.21 -Z−„Ú9Dä0É[Ç . . . 16 Ç 3.1 Á§íÖ½˜-Z . . . 18 Ç 3.2 Á§íÖ½˜PÓÂÚ˜ý<Ç . . . 18

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Ç 3.3 Á§íÖ½˜PÓÂ5ÕGÇ . . . 19 Ç 3.4 Á§íÖ½˜PÓÂÚ˜−„Ú9Dä0É[ . . . 20 Ç 3.5 NMOS ÇÉ . . . 20 Ç 3.6 CMOS ÇÉ . . . 21 Ç 3.7 àJ©Q5NMOS ÇÉ . . . 22 Ç 3.8 JÇÉ©Q‹§J£Á§íÖ½˜PÓ . . . 22 Ç 3.9 ©Q5(5Ú˜ý<Ç . . . 23 Ç 3.10 JÇÉ©Q(‹§íÖ½˜PÓÂ−„Ú9Dä0É[ . . . 23 Ç 3.11 JÇÉ©Q(Á§íÖ½˜PÓÂ−„Ú9Dä0É[ . . . 24 Ç 3.12 Ö½˜-Z2-ä0Ñ2.3GHz v5óPÆmÇ . . . 26 Ç 3.13 xNMOS ÇÉ5Ö½˜2-ä0Ñ2GHz v5óPÆmÇ. . . 26 Ç 3.14 xÇÉ5Á§Ö½˜2-ä0Ñ670MHz v5óPÆmÇ . . . 27 Ç 4.1 Ú˜0Ç . . . 28 Ç 4.2 ύ[×ø50Ç . . . 29 Ç 4.3 ÊTT _-‹§Ö½˜Ú˜−„Ú9Dä0É[ . . . 30 Ç 4.4 ÊTT _-Á§Ö½˜-Z−„Ú9Dä0É[ . . . 31 Ç 4.5 ÊFF _-‹§Ö½˜Ú˜−„Ú9Dä0É[. . . 31 Ç 4.6 ÊFF _-Á§Ö½˜Ú˜−„Ú9Dä0É[. . . 32 Ç 4.7 ÊSS _-‹§Ö½˜Ú˜−„Ú9Dä0É[ . . . 32 Ç 4.8 ÊSS _-Á§Ö½˜Ú˜−„Ú9Dä0É[ . . . 33 Ç 4.9 Êä0Ñ1.35GHz v TT _-‹§Ö½˜5 £«|š . . . 33 Ç 4.10 ‹7TSMC ™Ä PAD (50Ç . . . 35 Ç 4.11 ‹7PAD (5|š . . . 35 Ç 4.12 TT _-‹§Ö½˜š5é0‰“ . . . 36 Ç 4.13 TT _-Á§Ö½˜š5é0‰“ . . . 36 Ç 4.14 FF _-‹§Ö½˜š5é0‰“ . . . 37 Ç 4.15 FF _-Á§Ö½˜š5é0‰“ . . . 37 Ç 4.16 SS _-‹§Ö½˜š5é0‰“ . . . 38

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 1 ı

é

1.1

Ú9−„PÓÂ5½b4£w@à

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1.2

d.èDû˝œ

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Ó (Relaxation Oscillator) 5ŸÜ, -Z, 4?, £Ô4ÀíÜJ£zp·H ¥³U

àíu=PÓÂ, =PÓÂ}À«|D«ύ|s, À«|í=PÓÂ¥ó (Inverter) íQ, C6uw‰$, RéôbPÓÂ[2] «ύ|í=PÓÂ, àd.[3], ‚à ŠÚ®íh1, ÊsQª®ƒ14GHz-23GHz í|c¸ˇ 7d.[4][5] 2F‚àí†uMOS ¯#í×ü −„PÓíä0 d.[9][10] µsBbUàNMOS TÑÇÉvíÔ4J£Ûb ·<5?íËj =PÓÂíÔ45øuª‚àQbí.°, )ƒ.°íPÓä0, °v6ª J)ƒÖóPí|, Î7bí.°5Õ, JuªJy‹,Ú9í−„, ÿªJ;WÛ°)ƒFb íä0 Î7-Zí.°5Õ, ä0í−„j6F.°, Êùı2úk¥.°íPÓÂ} ÀíÜ£zp, J%-ê|Bbí-Z

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 1 ı é

1.3

û˝ñí

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1.4

d-Z

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 2 ı

= 

P Ó Â Ú ˜ Ÿ Ü D - Z

2.1

=PÓÂ!…-Z

=PÓ (Ring Oscillator) wÔ45øuª‚àQbí.°7)ƒ.°íPÓä0, dø_=í$Õ, J£âk©ø|óPíÏæ, 6ªJ‚àQbí.° ×)F.°íóP |, JÛbÖóPí|, †Qíbÿ.âÓ‹, OuPÓä0†}±Q, øO=PÓ }À«|J£Â«Ï|s 2.1.1 À«|=PÓ À«|í=PÓÂwú-ZàÇ2.1,XY D Z ú_õ}Ñ©øí¥ó|õ, Ü;í |šÇàÇ2.2,VxVyDVz}ÑÇ2.12í XY D Z ú_õí|Ú9, FJªJõƒší ‰“âVxƒVy%¬ø_TdÍ(¥ó180 |, yâVyƒVzy%¬ø_TdÍ(¥ó180 |, | (ƒVx, à¤í=- $AËÓ À«|í=PÓÂwU‚TÑ T = 1 2N Td (2.1) w2 N ÑËÓÂíb,TdÑ©ø[×íôbvÈ, w©øí|óPφÑ180 o N , 6ÿuËÓ ÂªJßÞí|óP Ç 2.1: úCMOS ¥óÂ5=PÓ -ÞÔ|øÀ«|=$PÓÂíõÒÚ˜Wä, øOUàü¥óÂQí=PÓÂÚ˜ àÇ2.3, ªJõƒ©øuâøå NMOS J£øå PMOS F A, Í(âüQ$Aø_

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 2 ı =  P Ó Â Ú ˜ Ÿ Ü D - Z Ç 2.2: úCMOS ¥óÂ5=PÓÂÜ;|š Ç 2.3: f$üCMOS =PÓÂÚ˜ =Õ, Êf$,, =PÓÂíPÓä0¦²k©øíôbvÈTd, JuÛbÖóPí|, † .âbÓ‹PÓÂíb, Ouà¤øV6}±QËÓÂíPÓä0 FJÊd.[2] T|7øhí ¥²ÂQí-Z, h1ª*Ç2.4 õƒ, 6ÿuʝpmUbƒ® PMOS 5‡, l%¬ø_R évÈôb, ıémUªJlƒ® PMOS, Í(yƒ® NMOS, 6ÿumUƒ®såÚñí vÈ.ø_, wšíªœàÇ2.5, *Ç2ªJõƒf$íËÓÂmUpƒ NMOS pƒ PMOS ívÈu°ví, Ou‚à Skewed delay í-Z, †ubUpƒ Vin’¥õímUª pƒ Vin ¥õímU´bToƒ®, , Ç2.6 Ñ Skewed delay ü-ZíÚ˜Ç, ‚à Skewed delay íiõuÊ.Z‰Ú˜í-Z, ccZ‰Ú˜íQ¶, ÿªU)PÓä0Ó0, wh1Êkf $í CMOS ¥óÂ, JupmUâòÚPƒQÚP, † PMOS Çó,NMOS É£, U)|m

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 2 ı =  P Ó Â Ú ˜ Ÿ Ü D - Z

Ç 2.4: Réôb-Z5ý<Ç

Ç 2.5: pšíªœ

UÑâQÚPBòÚP ; JupmUâQÚPƒòÚP, † PMOS É£,NMOS Çó, U)| mUÑâòÚPBQÚP,NMOS D PMOS íÇɍTu°vªWí 7‚àRéôb (Skewed delay) í-Z, uébpƒ PMOS ímUªp NMOS ímU´bToƒ®, T‡í ó PMOS(çpÚPâòQv) CuÉ£ PMOS(çpÚPâòƒQv), पU) ÚPힲ vÈòs, 7ªJÓ0ä0 Êd.[2] 2uJ 0.8µm 5V CMOS ‚à SPICE  T_Ò, ÊjK

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 2 ı =  P Ó Â Ú ˜ Ÿ Ü D - Z

Ç 2.6: Réôb=PÓÂ

¡bÑ W=10µmL=0.8µm(PMOS),W=5µmL=0.8µm(NMOS) -F)ƒí_Ò!‹uUà f$íüPÓÂPÓä0Ñ 784MHz, Uàôb-ZíüPÓÂPÓä0Ñ 1.27GHz, ªf$ í§Ó07ì}5 62 7Bbuà TSMC 0.18 µm 1P6M CMOS`˙, ‚à Hspice  T _Ò, #ì MOS í¡b,W=0.9 µm L=0.18 µm(PMOS), W=0.7 µmL=0.18 µm(NMOS), ÊÚÄÚ9Ñ 1.8V -, _Òf$íü CMOS PÓ , wPÓä0Ñ3.5GHz, _Ò‚àôb-ZíPÓÂ, wPÓä0†Ñ 6.8GHz, §ªf$íüPÓÂÓ07ì}5 û |íš àÇ2.7 Ç2.8, u¦35ns ƒ37ns ¥ø¨vÈíš$Vªœ, *š$ÇÿªJÀUíõƒä0Ó ‹¡sI Ç 2.7: Uàf$üCMOS =Pӝ|š 2.1.2 «ύ|=PÓ «ύ|í=$PÓÂ, úí-ZàÇ2.9, |Ñύs«,X í¥ó|«Ñ X’ Yí¥ ó|«Ñ Y’7 Z í¥ó|«Ñ Z’, /ύ|í=$PÓÂwQíb, .dÀ«|í

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 2 ı =  P Ó Â Ú ˜ Ÿ Ü D - Z Ç 2.8: xRéôb-Z5PÓÂü|š =$PÓÂ, Qb.âbÀbíÌ„ …dFàí6ÿuύ|í-Z Ê-Þ6Ô|õ Òíύ|PÓÂÚ˜VdWä, }u‚àŠÚ®h1 −„ä0íύ|=$PÓÂ, ‚à MOS ¯#−„PÓä05=$PÓÂJ£UàÖ½˜-Zí=$PÓ ژ6°šøà TSMC 0.18 µm 1P6M CMOS `˙, Í(J Hspice  _Ò¥úÚ˜, 1zp¥úÚ˜íÔ 4, J%-ê|BbFqlí-Z Ç 2.9: ύ|5=PÓÂ-Z xŠÚ®í=PÓÂ, wŠÚ®-ZÚ˜àÇ2.10, M1DM2Ñøύp«, âVout s «õª ,M3DM4}$AøÚ®MÑ −2gmíŠÚ®, 7Ç2.11uø«í^šÚ˜, ^Ú®MÑ−1gm, FJc_Ú®Š-R1¸R2J£>©¯úM3DM4, úø_NMOS Vz, Tkñ¸–v wÚ¼ Ñ ID = 1 2µnCOX( W L)(VGS− Vt) 2 (2.2)

w2IDѼ%MOS í ”Ú¼,VtÑ@äÚ9(threshold voltage) 7gmÑ

gm = ∂ID ∂VGS (2.3) = µnCOX( W L )(VGS− Vt) (2.4) â (2.2) ¢ª)ƒ µnCOX( W L ) = 2ID (VGS− Vt)2 (2.5)

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 2 ı =  P Ó Â Ú ˜ Ÿ Ü D - Z Ç 2.10: xª‰ŠÚ®íύú * (2.5) ø (2.4) 2 µnCOX(WL) J (VGS2ID −Vt)2 H²ª) gm = 2ID VGS− Vt (2.6) *,HäBbªJ)ƒçÚ¼ I1 Ó‹v gm 6}OÓ‹, 7*Ç2.11 )ø^í|Ú® R Ñ R = RP// −1 gm3,4 (2.7) = RP 1 − gm3,4RP (2.8) w2 RP = R1 = R2 FJç I1 Ó‹v gm M6OÓ‹U)^|®}R‰× FJªU)ä 0-±, °Ü, JU I1 ‰ü, gm ‰ü, †ä0Ó‹ Ç2.12Ñwø-Z, ÚñM1¸M2Ñύpú,M3¸M4$AøŠÚ®, âM5¸M6íÏ ú −„¼%M1M2M3¸M4íÚ¼, çVcon2 ×k Vcon1, ¼%M3¸M4íÚ¼Ó‹,gm‰ ×, c_^Ú®Ó‹, PÓíä0ÿ}±Q, çVcon1 ×k Vcon2, ¼%M3¸M4íÚ¼ÿ}Á ý,gm}‰ü, c_^Ú®Áü, PÓíä0ÿ}Tò, FJ‚àÚ9í|c, ªJ)ƒøPÓí¸ ˇ #ìMOS ¡bÑ W=10µmL=0.18µm, ‚à TSMC 0.18 µm CMOS 1P6M `˙, Êü Q-_Ò−„Ú9Dä0É[, w!‹(àÇ2.13, [2.1†Ñ©ø_−„Ú9-F)ƒíP

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 2 ı =  P Ó Â Ú ˜ Ÿ Ü D - Z Ç 2.11: Ç2.4íš^Ú˜ Ç 2.12: xŠÚ®PÓÂ5øÚ˜ Óä0 −„ís«Ñύp, FJdWÑM7•”Ú9Á M8•”Ú9íM −„Ú9*0.8V-1.2V, )ƒí−„ä0¸ˇÑ0.94GHz-3.74GHz, |š$àÇ2.14, š$u¦35ns ƒ37ns ¥ø ¨vÈ

(21)

 2 ı =  P Ó Â Ú ˜ Ÿ Ü D - Z Ç 2.13: ü-Z-−„Ú9Dä0É[ −„Ú9 ÀP PÓä0 ÀP -0.4 V 0.94 GHz -0.3 V 1.36 GHz -0.2 V 1.72 GHz -0.1 V 2.12 GHz 0 V 2.5 GHz 0.1 V 2.84 GHz 0.2 V 3.16 GHz 0.3 V 3.48 GHz 0.4 V 3.74 GHz [ 2.1: ü-Z-−„Ú9Dä0[ ÊJ,Ü7‚àŠÚ®Z‰ä0[3] í=PÓÂ, ¥³yÜí«|=PÓÂu‚ àMOS ¯# −„PÓíä0[5], wø-ZàÇ2.15,M5DM6Ñύp«, y‹pM1¸M2

AøCMOS ~ž (Latch), 1âM3DM4−„PMOS ÚñM1DM2íƒ|×Ú9, 6−„~

(22)

 2 ı =  P Ó Â Ú ˜ Ÿ Ü D - Z Ç 2.14: Êä0Ñ2.84GHz v5|š U)PMOS Š-Úñ|Ú¼Áý, ÕGZ‰.q, ôbívÈÓ‹, FJä0-± ç Vcon-trol Ú9±Qv, ~ží#ÿ}‰ÿ, U) PMOS Š-Úñ|Ú¼Ó‹, ÕGZ‰œñq, ôbvÈÁý, ä0Ó0 JÇ2.15Ñø, Q v, ‚à Hspice _Òí!‹àÇ2.16, Ê−„ Ú9* 0.6V-1.8V -, © 0.1V TøŸ_Ò, −„PÓä0¸ˇª* 0.38GHz-2.35GHz, [ 2.2 Ñ ©ø_−„Ú9-íPÓä0 Ç 2.15: ‚àMOS ¯#−„ä05ôb-Z

(23)

 2 ı =  P Ó Â Ú ˜ Ÿ Ü D - Z Ç 2.16: −„Ú9Dä0É[ −„Ú9 ÀP PÓä0 ÀP 0.6 V 2.35 GHz 0.7 V 2.34 GHz 0.8 V 2.31 GHz 0.9 V 2.26 GHz 1.0 V 2.19 GHz 1.1 V 2.11 GHz 1.2 V 2.00 GHz 1.3 V 1.86 GHz 1.4 V 1.67 GHz 1.5 V 1.32 GHz 1.6 V 0.85 GHz 1.7 V 0.50 GHz 1.8 V 0.38 GHz [ 2.2: −„Ú9Dä0[

2.2

xÖ½˜5=PÓÂ-Z5«n

Ö½˜í<2ÊkRé˜[2] J££˜, s˜°væÊk°øËÓÂ52, Ö‹p Ré˜íñíÿubÁýPÓÂíôbvÈ, U5skÊËÓÂÉË£˜-íôbvÈ, 7

(24)

 2 ı =  P Ó Â Ú ˜ Ÿ Ü D - Z )ƒœòíÍTä0 xÖ½˜í=ËÓÂÚ˜-Z[4], àÇ2.17 Ç 2.17: Ö½˜-Z Ç 2.18: Ö½˜5ÕGÇ D,ø‚à MOS ¯#−„íPÓÂ-Zí.°õÊkÖ½˜í-ZÖ7M5J£M6 ¥såÚñTÑRéôb(skew-delay) -Z, 6ÿuÖ7 S+ J£ S-¥s_p«õ, wŸÜ

(25)

 2 ı =  P Ó Â Ú ˜ Ÿ Ü D - Z

DRé-ZéN, 6ÿuÊ NMOS(M1,M2) ÕGbZ‰5‡, 9l Z‰PMOS M5J£M6) í

ÕG, U)5(|ÕGœqZ‰, ÁýôbvÈ, 7®ƒÓ0PÓä0í!‹, wÕGÇàÇ2.18, *Ç2ªJõƒ, Êø−píš$-M1J£M2íÇÉ8$, J£ BbıÊM1J£M2Z‰Õ G5‡, ÿléM5J£M6ÕG9lZ‰, 7®ƒFbíñí BbJ í-Z õÛÚ˜, -Z ý<ÇàÇ2.19, w2 N=9,n=8,  A1B A9 ,M1B M9Ñ£«| M’1B M’9ÑŠ« |, Q 5(íÚ˜àÇ2.20, %â Hspice _Ò, −„Ú9â 0.6V-1.8V, © 0.1V TøŸ_ Ò, −„Ú9Dä0í_Ò!‹àÇ2.21, ª)ƒ−„íPÓä0â 1.72GHz-2.54GHz, Ê,ø ÌÖ½˜í-Z-−„Ú9Ñ0.6V v, PÓíä0Ñ2.35GHz, 7ÊÖ½˜í-Z-−„Ú9 Ñ 0.6V v, PÓíä0Ñ 2.54GHz, ªÌÖ½˜v§07ì}5 8 [ 2.3 Ñ 0.6V-1.8V © ø_−„Ú9-íPÓä0 Ç 2.19: -Zý<Ç

(26)

 2 ı =  P Ó Â Ú ˜ Ÿ Ü D - Z Ç 2.20: Ö½˜PÓÂ5Ú˜ý<Ç −„Ú9 ÀP PÓä0 ÀP 0.6 V 2.54 GHz 0.7 V 2.54 GHz 0.8 V 2.51 GHz 0.9 V 2.48 GHz 1.0 V 2.37 GHz 1.1 V 2.36 GHz 1.2 V 2.30 GHz 1.3 V 2.19 GHz 1.4 V 2.10 GHz 1.5 V 2.08 GHz 1.6 V 1.94 GHz 1.7 V 1.82 GHz 1.8 V 1.72 GHz [ 2.3: ‹§íÖ½˜-Z−„Ú9Dä0[

(27)

 2 ı =  P Ó Â Ú ˜ Ÿ Ü D - Z

(28)

 3 ı

Öä=PÓÂÚ˜5ql

3.1

ÁMPÓä0íÖ½˜=PÓÂ

UàÖ½˜-Zí=PÓÂ, øOVz·uıªJT¯PÓíä0, OuBb‚àÖ½ ˜íh1, 6ÿuʝpmUƒ® NMOS 5‡T‡í Z‰ PMOS íÕG, ‚à¥h1 ql u´ªJÓ‹ôbívÈ, 6ÿu±QPÓä0, FJøÖ½˜Ú˜í©QjZ‰, 6ÿuøÖ ½˜-ZísåÚñ£Š«¥¬VQ, tÇ ±QÚ˜íPÓä0, ¥Qí-ZàÇ3.1, Ÿl Ö½˜í S+ «bQƒ|í£«, Ÿlí S-«bQ|튫, Ê¥³øF¥¬VQ, 6ÿu S+ «Qƒ|튫,S-«Qƒ|í£«, *Ú˜ý<Ç3.2 2ªJõƒŸlÖ½˜Q|£ «íõÛÊZÑQÊŠ«, Ü;íÕGÇ, àÇ3.3, âÇ2õƒBbıÊmUƒ® NMOS M7J £M8v, T‡U)PMOS M5J£M6Z‰ÕG, FbíñíD‹§íÖ½˜-Zó¥, ¥³ub UPMOS ÕGœØZ‰J®ƒÓ‹ôbvÈ, 6ÿu±QPÓä0íñí −„Ú9Dä0í_Ò !‹àÇ3.5, ªJõƒÊ−„Ú9* 0.6V-1.8V, −„íä0¸ˇ* 0.27GHz-1.6GHz *,øı ‚à MOS ¯#−„PÓä0í-Z, Bbø−Ê−„Ú9Ñ1.8V -íPÓä0u0.38GHz, 7Ê¥³‚ऩQj°šÊ−„Ú9 1.8V -, F)ƒí−„ä0u0.27GHz, ªœ–VPÓä 0Áý7ì}5 29 FJ%âÁ§íÖ½˜í©Qj, üõªJ±QPÓíä0 [3.1†Ñ ©ø_−„Ú9-íPÓä0

(29)

 3 ı Öä=PÓÂÚ˜5ql Ç 3.1: Á§íÖ½˜-Z Ç 3.2: Á§íÖ½˜PÓÂÚ˜ý<Ç

3.2

J MOS TÑÇÉ5}&

J NMOS TÑÇÉv, àÇ3.5, BbıÊû¦v ”Ä”Ú9ÄPó°, 6ÿuÊ C ÑòÚ Pv A D B íÚ9ÄPó°, ¤v VDS = 0 (3.1) #8•òÚPíÚ9, FJ VDS < VGS− Vt (3.2) FJBbø−, Úñ¤vuÍTÊú”–, wÚ¼íÉ[ [10]Ñ ID = µnCOX( W L)(VGS− VT)VDS− 1 2V 2 DS (3.3)

(30)

 3 ı Öä=PÓÂÚ˜5ql Ç 3.3: Á§íÖ½˜PÓÂ5ÕGÇ −„Ú9 ÀP PÓä0 ÀP 0.6 V 1.60 GHz 0.7 V 1.59 GHz 0.8 V 1.59 GHz 0.9 V 1.54 GHz 1.0 V 1.48 GHz 1.1 V 1.39 GHz 1.2 V 1.28 GHz 1.3 V 1.1 GHz 1.4 V 0.84 GHz 1.5 V 0.58 GHz 1.6 V 0.41 GHz 1.7 V 0.32 GHz 1.8 V 0.27 GHz [ 3.1: Á§íÖ½˜-Z−„Ú9Dä0[ âk VD ˛D VS ó°, FJ ID = µnCOX( W L)(VGS− VT)VDS (3.4)

(31)

 3 ı Öä=PÓÂÚ˜5ql Ç 3.4: Á§íÖ½˜PÓÂÚ˜−„Ú9Dä0É[ Ç 3.5: NMOS ÇÉ † RON = ∂iD/∂V1 DS = L µnCOXW (VGS− VT) (3.5)

7ç VGS ükC6uk VT v,NMOS Úñ†ÍTÊi¢–, ¤v ROF F Ü;,†ÑÌÌ×,

7 NMOS …™íÚñí^@, 6úÚ˜ä0<í à, Í7w…™RONCÿ²ì7 NMOS

(32)

 3 ı Öä=PÓÂÚ˜5ql P, †−„«•”íÚP, ‘.bòkÚÄÚ9 NMOS ÇÉí/<Ì„ÊJ CMOS ÇÉ·ªJ \j²,CMOS ÇÉ, àÇ3.6, CMOSÇÉÑøå NMOS ÚñDøå PMOS Úñ A, ç C õÑòÚPv,NMOS D PMOS îû¦, ç C õÑQÚPv, †s6·i¢, Uà CMOS í ßTu, ªø ”DÄ”ÚP…¯BDÚÄÚ9°šíÄP, U) A õD B õOuâkÖ7øå PMOS Úñq¶Úñí à, } àPÓíä0 Ç 3.6: CMOS ÇÉ

3.3

‚à NMOS ©Q(5Ú˜-ZD_Ò!‹

mͲ%7Ó0PÓä0íÖ½˜DÁMPÓä0íÖ½˜sÚ˜-Z, âks6ÉÏÊ Ú˜í©Qj, FJBbªJql~²ÇÉøsÚ˜!¯, qlíÇÉàÇ3.7, *Ç2ªõƒ Bbql A D B s_−„«, −„JÖ½˜C6u¥Ö½˜í©Qj, ç A ÑòÚP B Ñ QÚP, Ú˜ÑÓ0PÓä0íÖ½˜©Qj, ç A ÑQÚP B ÑòÚP, Ú˜ÑÁMPÓä

0íÖ½˜©Qj, 7 C «†uQÊÖ½˜í S+ «C6u S-«, õuJ¨©Qj©

Q M(N) Níuø_ύ[×í|£«, M’(N) Ñύí|Š«, UàÇÉ!¯(5-ZÇ, àÇ3.8, Ê S+ J£ S-íõîÇÉTÑ©Q Ú˜íý<Ç, àÇ3.9, *Ç2ªJõ ƒÚ˜íQj 7©Q(JÓ0PÓä0íÖ½˜©Qv_Ò!‹×ÛÊÇ3.10, Ê−„Ú9 * 0.6V-1.8V, © 0.1V _ÒøŸ, −„íä0¸ˇ* 1.44GHz-2.28GHz JÁ§íÖ½˜©Q v_Ò!‹×ÛÊÇ3.11, _ÒjD‹§Ö½˜ó°, −„íä0¸ˇ* 1.44GHz-2.28GHz *_Òí!‹6ªJõƒÊ‹p7 NMOS ÇÉ5(PÓíä0±QíÛï

(33)

 3 ı Öä=PÓÂÚ˜5ql Ç 3.7: àJ©Q5NMOS ÇÉ A ÚP B ÚP ©Qj High Low ‹§íÖ½˜ Low High Á§íÖ½˜ [ 3.2: ÇÉD©Q˜É[ Ç 3.8: JÇÉ©Q‹§J£Á§íÖ½˜PÓÂ

(34)

 3 ı Öä=PÓÂÚ˜5ql

Ç 3.9: ©Q5(5Ú˜ý<Ç

(35)

 3 ı Öä=PÓÂÚ˜5ql −„Ú9 ÀP PÓä0 ÀP 0.6 V 2.28 GHz 0.7 V 2.26 GHz 0.8 V 2.24 GHz 0.9 V 2.2 GHz 1.0 V 2.16 GHz 1.1 V 2.1 GHz 1.2 V 2.04 GHz 1.3 V 1.96 GHz 1.4 V 1.86 GHz 1.5 V 1.76 GHz 1.6 V 1.68 GHz 1.7 V 1.58 GHz 1.8 V 1.44 GHz [ 3.3: xÇÉ5‹§íÖ½˜PÓÂ−„Ú9Dä0[ Ç 3.11: JÇÉ©Q(Á§íÖ½˜PÓÂ−„Ú9Dä0É[

(36)

 3 ı Öä=PÓÂÚ˜5ql −„Ú9 ÀP PÓä0 ÀP 0.6 V 1.96 GHz 0.7 V 1.90 GHz 0.8 V 1.90 GHz 0.9 V 1.88 GHz 1.0 V 1.84 GHz 1.1 V 1.78 GHz 1.2 V 1.62 GHz 1.3 V 1.46 GHz 1.4 V 1.08 GHz 1.5 V 0.76 GHz 1.6 V 0.50 GHz 1.7 V 0.38 GHz 1.8 V 0.32 GHz [ 3.4: xÇÉ5Á§íÖ½˜PÓÂ−„Ú9Dä0[

3.4

óPÆm

úkø_Ü;í£ýPÓÂ, }ßÞøÜ;í|š, s(t) = Asin(ωt) (3.6) OuâkóPÆmí à, õÒ,íš}Ñ s(t) = Asin(ωt + φ(t)) (3.7) w2φ(t)NíÿuóPÆm, óPÆmí[ÛúPÓÂí[Û à'×, ¥u'½bí5?ÄÖ, F JÊ¥³BbòQ‚à Spectre RF,ñ _ÒÊÌ NMOS ÇÉvÓ0PÓä0íÖ½˜-í óPÆm, J£ÊJ NMOS ÇÉ©Q5(Ó0PÓä0Ö½˜J£ÁMPÓä0Ö½˜©Q jíóPÆm, w!‹×ÛÊÇ3.12 Ç3.13J£Ç3.14 ªJõƒÊ‹§íÖ½˜-Z-2-ä0Ñ 2.3GHz v, Rä0 (offset frequency) Ñ100kHz vwóPÆmÑ-96.35dBc/Hz, ÊR ä0Ñ 1MHz vwóPÆmÑ-116.3dBc/Hz 7ÊJ NMOS ÇÉ©Q5(, ÊÓ0PÓä0í Ö½˜©Qj-, 2-ä0Ñ 2GHz, Rä0Ñ 100kHz vwóPÆmÑ-95.77dBc/Hz, Ê Rä0Ñ 1MHz vwóPÆmÑ-115.8dBc/Hz ÊÁMPÓä0íÖ½˜©Qj-, 2-ä0Ñ 0.67GHz, Rä0Ñ 100kHz v, wóPÆmÑ-85.46dBc/Hz, ÊRä0Ñ 1MHz v, wóPÆmÑ-105.5dBc/Hz

(37)

 3 ı Öä=PÓÂÚ˜5ql

Ç 3.12: Ö½˜-Z2-ä0Ñ2.3GHz v5óPÆmÇ

(38)

 3 ı Öä=PÓÂÚ˜5ql

(39)

 4 ı

_Ò!‹Dªœ

Ê_Ò2, Ú˜íÚ˜jKÌSà TSMC 0.18 µm 1P6M CMOS `˙, Ç4.1 uÚ˜0 Ç, øuÖ _[×, ¤Ú˜FÛbíÚÄÚ9u1.8V , Ž-Ú˜F2Þ Ñ 226.1 X 112 mm2 Ê-Þ†×Û7_Òí!‹J£FqlíPÓÂd[J£(4 Ç 4.1: Ú˜0Ç Ç4.2 F×ÛíuÇ4.1 2íw2øύ[רŽÇÉÚ˜í0Ç, *Ç2ªJõƒÚñ í§8$, PMOS¶}ûåÚñ, }uÖ½˜J£TÑ0žíÚñ®så,NMOS ¶}†Î7p«JÕ´¨Ž72Èsåœü, àV−„ËÓä0íÚñ, 7Ç2¬i†uÇÉÚ ˜, u‚àûå NMOS ©QƒÖ½˜íp«, ÊqljÞ5?ƒú˚4, FJ©øύí-Z·uà¤, Í(øDø5Èí©QjuJ=Õí÷¶, Jfn}/<ύ5ÈíÀ˘© Q(ØÅ7¨AÊ/<ύíôbvȜŠ, °v6.øÚñÔØ¡Jfnó à

4.1

0_Ò!‹D`˙‰}&

Ú˜Êqlß5(}£pÆTAÒ, ¦ÒÉÊÆ,2'üíø¶}, 7°šíÚ˜Ê Æ,í.°Ëj\`¨|V, w^?}.°, FJÆ}TX.°íií_ (Corner Model)

(40)

 4 ı _Ò!‹Dªœ

Ç 4.2: ύ[×ø50Ç

#8ql6 T_Ò, J5?ƒ.°Ëj\`¨|íÒu´°šªJ£ T, Î7™Äí TT 5

_Ò!‹5Õ, Ê¥³Bb´Uà FF(Fast NMOS Fast PMOS) J£ SS(Slow NMOS Slow

PMOS) ¥s”«í8$ T_Ò, Ç4.3 F×ÛíuÊ TT _-J‹§íÖ½˜©Qj í_Ò!‹, −„Ú9* 0.6V-1.8V, PÓä0¸ˇªâ 0.96GHz-1.8GHz Ç4.4 F×Ûíu Ê TT _-JÁ§íÖ½˜©Qjí_Ò!‹, −„Ú9* 0.6V-1.8V, PÓä0¸ˇâ 0.32GHz-1.58GHz ªœø-Ê TT _-(«_Ò‡«_Òí!‹, ʇ«_ÒvÊ−„Ú 9Ñ 0.6V v, ä0ªJ®ƒ2.28GHz, OuÊ(«_ÒvBbõƒ°šÊ−„Ú90.6V -PÓä 0É 1.8GHz, ×ɇ«_Òä0íì}5þ , FJ0íxÍ´.âb‹# Ç4.5 F ×ÛíuÊ FF _-J‹§íÖ½˜©Qjí_Ò!‹, −„Ú9* 0.6V-1.8V, PÓä0 ¸ˇâ 1.14GHz-2.1GHz Ç4.6F×ÛíuÊ FF _-JÁ§íÖ½˜©Qjí_Ò!‹, −„Ú9* 0.6V-1.8V, PÓä0¸ˇâ0.38GHz-1.82GHz Ü,Ê FF í_-, _Ò|Ví PÓä0@vbªÊ TT -´b0, *!‹ªJõƒ, Ê−„Ú90.6V -, ä0ªJ®ƒ2.1GHz, 7Ê TT -Ñ1.8GHz, ¯¯BbFら0í!‹ Ç4.7F×ÛíuÊ SS _-J‹§í½˜ ©Qjí_Ò!‹, −„Ú9*0.6V-1.8V, PÓä0¸ˇâ0.8GHz-1.54GHz Ç4.8F×Û íuÊ SS _-JÁ§íÖ½˜©Qjí_Ò!‹, −„Ú9*0.6V-1.8V, PÓä0¸ˇâ 0.28GHz-1.34GHz 7Ü,Ê SS í_-, _Ò|VíPÓä0@vbªÊ TT -´bVí M, *!‹6ªJõƒ, Ê−„Ú9 0.6V -, ä0É®ƒ 1.54GHz, 7Ê TT -Ñ 1.8GHz, °š ¯¯BbFã‚PÓ§}‰Mí!‹ [ 4.1 †ucÜ7,H_Ò8$í!‹, [ 4.2 †uF qlíPÓÂd[ 5(Bby‹, TSMC ™Ä PAD D³ PAD í_ÒTªœ‹7 PAD 5

(41)

 4 ı _Ò!‹Dªœ PAD F©Qíõ˛%™ýÊÇ2, }uÚÄÚ9Qõ VDD QËõ VSS −„Ú9«õ Vctrl NMOSÇÉís_~²−„ Vctrla ¸ Vctrlb J£PÓÂw2s«í| Vout1 ¸ Vout2 Ç 4.12 ѝ|š, ªõƒQ PAD µøí|š§ƒ PAD íÚñ à,¯§ÁM Ç 4.3: ÊTT _-‹§Ö½˜Ú˜−„Ú9Dä0É[

4.2

(4

Ê¥³Bb6ú(4T}&, 5‡í_ÒuJÚ9ȽÑ0.1V TøŸ_Ò, ª)ƒ.°−„Ú9 -íPÓä0, Í(åAPÓš Ê¥³Bbv|©s_š2Ƚí−„Ú9DPÓä05é 0, yø!‹åAÇ$, हªõ|é0퉓, 7)ø/ø¸ˇ2(4íß; dWÑÈ½Ú 9í2-õ, à0.6V ¸0.7V sõÈíé0, ÿ¦0.65V çT X W,Y WÑsȽõíä0óÁy ÎJȽÚ9 0.1V, 7)ƒé0 Ç 4.13 B 4.18 ÿu,.°_-šíé0‰“, âé0¹ª õ|(4í[Û

(42)

 4 ı _Ò!‹Dªœ

Ç 4.4: ÊTT _-Á§Ö½˜-Z−„Ú9Dä0É[

(43)

 4 ı _Ò!‹Dªœ

Ç 4.6: ÊFF _-Á§Ö½˜Ú˜−„Ú9Dä0É[

(44)

 4 ı _Ò!‹Dªœ

Ç 4.8: ÊSS _-Á§Ö½˜Ú˜−„Ú9Dä0É[

(45)

 4 ı _Ò!‹Dªœ Ú˜-Z −„Ú9 ÀP −„ä0¸ˇ ÀP ‹§5Ö½˜Ú˜ 0.6-1.8 V 1.72-2.54 GHz Á§5Ö½˜Ú˜ 0.6-1.8 V 0.27-1.6 GHz xÇÉ5‹§Ö½˜Ú˜ 0.6-1.8 V 1.44-2.28 GHz xÇÉ5Á§Ö½˜Ú˜ 0.6-1.8 V 0.32-1.96 GHz («_Ò TT xÇÉ5‹§Ö½˜ 0.6-1.8 V 0.96-1.8 GHz («_Ò TT xÇÉ5Á§Ö½˜ 0.6-1.8 V 0.32-1.58 GHz («_Ò FF xÇÉ5‹§Ö½˜ 0.6-1.8 V 1.14-2.1 GHz («_Ò FF xÇÉ5Á§Ö½˜ 0.6-1.8 V 0.38-1.82 GHz («_Ò SS xÇÉ5‹§Ö½˜ 0.6-1.8 V 0.8-1.54 GHz («_Ò SS xÇÉ5Á§Ö½˜ 0.6-1.8 V 0.28-1.34 GHz [ 4.1: .°-Z-−„Ú9Dä05d[ ¡b bM ÀP pÚÄÚ9 1.8 V Ú9−„¸ˇ 0.6-1.8 V −„ä0¸ˇ 0.32-1.8 GHz |í¼ú¼PÙ|üM 1.67 V ̾Š0 91.4 mW óPÆm -115.8 dBc/Hz (2-ä0 2GHz, Rä0Ñ 1MHz 8”-) [ 4.2: êcÚ˜5d[

(46)

 4 ı _Ò!‹Dªœ

Ç 4.10: ‹7TSMC ™Ä PAD (50Ç

(47)

 4 ı _Ò!‹Dªœ

Ç 4.12: TT _-‹§Ö½˜š5é0‰“

(48)

 4 ı _Ò!‹Dªœ

Ç 4.14: FF _-‹§Ö½˜š5é0‰“

(49)

 4 ı _Ò!‹Dªœ

Ç 4.16: SS _-‹§Ö½˜š5é0‰“

(50)

 5 ı

!

5.1

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…dT|øÁ§íÖ½˜-Z, wh1uâd. [4] 2íÖ½˜Fô.|V kf $·‚à MOS ¯#−„ä0í=$PÓÂ(Ring Oscillator)[5], ÄÖ½˜í‹p, T¯7 ®[×¥@í§, Ä7TòPÓÂíä0; Bbu‚à¥Qíj, 7U®[×¥@í§± Q, Ä7UPÓÂíä0-± पU)PÓÂyQíPÓä0 5(y‚àNMOS TÑ~² ÇÉ, ø‹§DÁ§íÖ½˜Ú˜©QÊø–, à¤øV%â NMOS ÇÉí−„, ªl}Aù_ ä; y%â®[×5ôbvÈ−„, ¹ª$As_ä0|c¸ˇ5Ú9−„PÓÂ, wªJ®ƒ œ íä0|c¸ˇ …d1qløQ íÚ9−„PÓÂ, BblJ SPICE ,ñ_Òw Ê.°−„Ú9-í−„PÓä0, |(yø¤Ú˜0, d(«_Ò ʝpÚÄÚ9Ñ1.8V -, %⇫_Ò, ¤Ú˜Ê−„Ú9Ñ 0.6V-1.8V v, ¤Ú˜í−„ä0¸ˇÑ 0.32GHz-2.4GHz; â(«_Ò, ¤PÓÂ5PÓä0ª®ƒí|c¸ˇÑ 0.32GHz-1.8GHz â¤_Ò!‹ªø, â k0vFßÞíÆà•ÞÚñí à, Ú˜íPÓä0±Q 6âk PAD í‹p}U)šZ ‰, FJBb6.âql buffer JÁý à

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¡5d.

[1] B. Razavi, Design of Analog CMOS Integrated Circuits, McGraw-Hill, 2001.

[2] S.-J. Lee, B. Kim, and K. Lee, “A Novel High-speed Ring Oscillator for Multiphase Clock Generation Using Negative Skewed-delay Scheme,” IEEE J. Solid-State Cir-cuits, vol. 32, pp. 289-291, Feb. 1997.

[3] A. Ong, S. Benyamin, J. Cancio, V. Condito, T. Labrie, Q. H. Lee, J. P. Mattia, D. K. Shaeffer, A. Shahani, X. Si, H. Tao, M. Tarsia, W. Wong and M. Xu, “A 40-43-Gb/s clock and data recovery IC with integrated SFI-5 1:16 demultiplexer in SiGe technology,” IEEE J. Solid-State Circuits, vol. 38, pp. 2155 - 2168, Dec. 2003. [4] Y. A. Eken and J. P. Uyemura, “A 5.9-GHz Voltage-Controlled Ring Oscillator in

0.18-µm CMOS,” IEEE J. Solid-State Circuits, vol. 39, pp. 230-233, Jan. 2004. [5] C. H. Park and B. Kim, “A Low-Noise, 900-MHz VCO in 0.6-µm CMOS,” IEEE J.

Solid-State Circuits, vol. 34, pp. 586-590, May 1999.

[6] P. R. Gray, Analysis and Design of Analog Integrated Circuits, John Wiley & Sons, 2001.

[7] L. Dai and R. Harjani, “Design of Low-Phase-Noise CMOS Ring Oscillators,” IEEE Trans. Circuits Syst. II, vol.49, pp. 328-338, May 2002.

[8] A. Hajimiri, S. Limotyrakis, and T. H. Lee, “Jitter and Phase Noise in Ring Oscilla-tors,” IEEE J. Solid-State Circuits, vol. 34, pp. 790-804, June 1999.

[9] P.V.A. Mohan, V. Ramachandran and M.N.S. Swamy, Switched Capacitor Filters, Prentice Hall ,1995.

[10] H.O. Johansson and C. Svensson, “Time Resolution of NMOS Sampling Switches Used on Low-Swing Signals,” IEEE J. Solid-State Circuit, vol. 33, pp. 237-245, Feb. 1998.

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5d. [11] W.S.T. Yan and H.C. Luong, “A 900-MHz CMOS Low-Phase-Noise Voltage-Controlled Ring Oscillator,” IEEE Trans. Circuits Syst. II, vol. 40, pp. 216-221, Feb. 2001.

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