國立交通大學
電機與控制工程學系
碩士論文
使用 0.18 um CMOS 實現多頻帶之電壓控
制環型振盪器
Implementation of a Multi-band Voltage-Controlled
Ring Oscillator Using 0.18 um CMOS
研 究 生:鄭國偉
指導教授:鄭木火博士
中華民國九十四年十月
使用 0.18 um CMOS 實現多頻帶之電壓控制環
型振盪器
Implementation of a Multi-band Voltage-Controlled Ring
Oscillator Using 0.18 um CMOS
研究生:鄭國偉 Student:Kuo-Wei Cheng
指導教授:鄭木火 Advisor:Mu-Huo Cheng
國立交通大學
電機與控制工程學系
碩士論文
A Thesis
Submitted to Department of Electrical and Control Engineering
College of Electrical Engineering and Computer Science
National Chiao Tung University
in Partial Fulfillment of the Requirements
for the Degree of Master
in
Electrical and Control Engineering
Oct. 2005
Hsinchu, Taiwan, Republic of China
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Ï[×íÚ9−„=PÓ â(«_Ò!‹ (Post-Sim) éý, Ê TÚ9Ñ 1.8V -, ¤P
ÓÂí¾Š0Ñ 91.4 mW, Ê2-ä0Ñ 2GHz, Rä0 1MHz 8”-, óPÆmÑ -115.8
dBc/Hz, PÓä0¸ˇª®ƒ 0.32GHz-1.8GHz, w|í¼ú¼ (peak-to-peak) PÙ|üM ªB 1.67V
Implementation of a Multi-band Voltage-Controlled
Ring Oscillator Using 0.18µm CMOS
Student: Kuo-Wei Cheng
Advisor: Dr. Mu-Huo Cheng
Institute of Electrical and Control Engineering
National Chiao-Tung University
Abstract
This thesis presents a multi-band voltage-controlled ring oscillator via the multiple-pass connection, resulting in a wide range of oscillation frequency. Most multiple-multiple-pass ring oscillators are designed to increase the oscillation frequency. In this thesis, we also exploit the concept of multiple-pass to design a multiple-pass ring oscillator which can decrease the oscillation frequency. A connection is designed via the NMOS switch to combine together the two circuits all via the concept of multiple-pass such that a wider range of oscillation frequency can be obtained. Hence, we obtain a voltage-controlled oscillator with two frequency bands which can be easily controlled by the on/off of the NMOS switches. We design a nine-stage ring oscillator; each stage consists of twelve MOS transistors including eight NMOS transistors and four PMOS transistors. This oscillator is simulated using 0.18 µm, 1P6M CMOS technology provided by Taiwan Semi-Conductor Manufacturing Company. The post simulation of the design oscillator, under the supply voltage of 1.8 V, shows that the required power is 91.4 mw, the phase noise is -115.8 dBc/Hz at a 1-MHz offset from a 2-GHz center frequency, the frequency tuning range is from 0.32GHz to 1.8GHz, and the minimum peak-to-peak output swing is 1.67V.
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w2IDѼ%MOS í ”Ú¼,VtÑ@äÚ9(threshold voltage) 7gmÑ
gm = ∂ID ∂VGS (2.3) = µnCOX( W L )(VGS− Vt) (2.4) â (2.2) ¢ª)ƒ µnCOX( W L ) = 2ID (VGS− Vt)2 (2.5)
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2 ı = P Ó Â Ú ˜ Ÿ Ü D - Z Ç 2.11: Ç2.4íš^Ú˜ Ç 2.12: xŠÚ®PÓÂ5øÚ˜ Óä0 −„ís«ÑÏp, FJdWÑM7•”Ú9Á M8•”Ú9íM −„Ú9*0.8V-1.2V, )ƒí−„ä0¸ˇÑ0.94GHz-3.74GHz, |š$àÇ2.14, š$u¦35ns ƒ37ns ¥ø ¨vÈ
2 ı = P Ó Â Ú ˜ Ÿ Ü D - Z Ç 2.13: ü-Z-−„Ú9Dä0É[ −„Ú9 ÀP PÓä0 ÀP -0.4 V 0.94 GHz -0.3 V 1.36 GHz -0.2 V 1.72 GHz -0.1 V 2.12 GHz 0 V 2.5 GHz 0.1 V 2.84 GHz 0.2 V 3.16 GHz 0.3 V 3.48 GHz 0.4 V 3.74 GHz [ 2.1: ü-Z-−„Ú9Dä0[ ÊJ,Ü7‚àŠÚ®Z‰ä0[3] í=PÓÂ, ¥³yÜí«|=PÓÂu‚ àMOS ¯# −„PÓíä0[5], wø-ZàÇ2.15,M5DM6ÑÏp«, y‹pM1¸M2
AøCMOS ~ (Latch), 1âM3DM4−„PMOS ÚñM1DM2íƒ|×Ú9, 6−„~
2 ı = P Ó Â Ú ˜ Ÿ Ü D - Z Ç 2.14: Êä0Ñ2.84GHz v5|š U)PMOS Š-Úñ|Ú¼Áý, ÕGZ‰.q, ôbívÈÓ‹, FJä0-± ç Vcon-trol Ú9±Qv, ~í#ÿ}‰ÿ, U) PMOS Š-Úñ|Ú¼Ó‹, ÕGZ‰œñq, ôbvÈÁý, ä0Ó0 JÇ2.15Ñø, Q v, ‚à Hspice _Òí!‹àÇ2.16, Ê−„ Ú9* 0.6V-1.8V -, © 0.1V TøŸ_Ò, −„PÓä0¸ˇª* 0.38GHz-2.35GHz, [ 2.2 Ñ ©ø_−„Ú9-íPÓä0 Ç 2.15: ‚àMOS ¯#−„ä05ôb-Z
2 ı = P Ó Â Ú ˜ Ÿ Ü D - Z Ç 2.16: −„Ú9Dä0É[ −„Ú9 ÀP PÓä0 ÀP 0.6 V 2.35 GHz 0.7 V 2.34 GHz 0.8 V 2.31 GHz 0.9 V 2.26 GHz 1.0 V 2.19 GHz 1.1 V 2.11 GHz 1.2 V 2.00 GHz 1.3 V 1.86 GHz 1.4 V 1.67 GHz 1.5 V 1.32 GHz 1.6 V 0.85 GHz 1.7 V 0.50 GHz 1.8 V 0.38 GHz [ 2.2: −„Ú9Dä0[
2.2
xÖ½˜5=PÓÂ-Z5«n
Ö½˜í<2ÊkRé˜[2] J££˜, s˜°væÊk°øËÓÂ52, Ö‹p Ré˜íñíÿubÁýPÓÂíôbvÈ, U5skÊËÓÂÉË£˜-íôbvÈ, 72 ı = P Ó Â Ú ˜ Ÿ Ü D - Z )ƒœòíÍTä0 xÖ½˜í=ËÓÂÚ˜-Z[4], àÇ2.17 Ç 2.17: Ö½˜-Z Ç 2.18: Ö½˜5ÕGÇ D,ø‚à MOS ¯#−„íPÓÂ-Zí.°õÊkÖ½˜í-ZÖ7M5J£M6 ¥såÚñTÑRéôb(skew-delay) -Z, 6ÿuÖ7 S+ J£ S-¥s_p«õ, wŸÜ
2 ı = P Ó Â Ú ˜ Ÿ Ü D - Z
DRé-ZéN, 6ÿuÊ NMOS(M1,M2) ÕGbZ‰5‡, 9l Z‰PMOS M5J£M6) í
ÕG, U)5(|ÕGœqZ‰, ÁýôbvÈ, 7®ƒÓ0PÓä0í!‹, wÕGÇàÇ2.18, *Ç2ªJõƒ, Êø−píš$-M1J£M2íÇÉ8$, J£ BbıÊM1J£M2Z‰Õ G5‡, ÿléM5J£M6ÕG9lZ‰, 7®ƒFbíñí BbJ í-Z õÛÚ˜, -Z ý<ÇàÇ2.19, w2 N=9,n=8, A1B A9 ,M1B M9Ñ£«| M’1B M’9ÑŠ« |, Q 5(íÚ˜àÇ2.20, %â Hspice _Ò, −„Ú9â 0.6V-1.8V, © 0.1V TøŸ_ Ò, −„Ú9Dä0í_Ò!‹àÇ2.21, ª)ƒ−„íPÓä0â 1.72GHz-2.54GHz, Ê,ø ÌÖ½˜í-Z-−„Ú9Ñ0.6V v, PÓíä0Ñ2.35GHz, 7ÊÖ½˜í-Z-−„Ú9 Ñ 0.6V v, PÓíä0Ñ 2.54GHz, ªÌÖ½˜v§07ì}5 8 [ 2.3 Ñ 0.6V-1.8V © ø_−„Ú9-íPÓä0 Ç 2.19: -Zý<Ç
2 ı = P Ó Â Ú ˜ Ÿ Ü D - Z Ç 2.20: Ö½˜PÓÂ5Ú˜ý<Ç −„Ú9 ÀP PÓä0 ÀP 0.6 V 2.54 GHz 0.7 V 2.54 GHz 0.8 V 2.51 GHz 0.9 V 2.48 GHz 1.0 V 2.37 GHz 1.1 V 2.36 GHz 1.2 V 2.30 GHz 1.3 V 2.19 GHz 1.4 V 2.10 GHz 1.5 V 2.08 GHz 1.6 V 1.94 GHz 1.7 V 1.82 GHz 1.8 V 1.72 GHz [ 2.3: ‹§íÖ½˜-Z−„Ú9Dä0[
2 ı = P Ó Â Ú ˜ Ÿ Ü D - Z
3 ı
Öä=PÓÂÚ˜5ql
3.1
ÁMPÓä0íÖ½˜=PÓÂ
UàÖ½˜-Zí=PÓÂ, øOVz·uıªJT¯PÓíä0, OuBb‚àÖ½ ˜íh1, 6ÿuÊpmUƒ® NMOS 5‡T‡í Z‰ PMOS íÕG, ‚à¥h1 ql u´ªJÓ‹ôbívÈ, 6ÿu±QPÓä0, FJøÖ½˜Ú˜í©QjZ‰, 6ÿuøÖ ½˜-ZísåÚñ£Š«¥¬VQ, tÇ ±QÚ˜íPÓä0, ¥Qí-ZàÇ3.1, Ÿl Ö½˜í S+ «bQƒ|í£«, Ÿlí S-«bQ|튫, Ê¥³øF¥¬VQ, 6ÿu S+ «Qƒ|튫,S-«Qƒ|í£«, *Ú˜ý<Ç3.2 2ªJõƒŸlÖ½˜Q|£ «íõÛÊZÑQÊŠ«, Ü;íÕGÇ, àÇ3.3, âÇ2õƒBbıÊmUƒ® NMOS M7J £M8v, T‡U)PMOS M5J£M6Z‰ÕG, FbíñíD‹§íÖ½˜-Zó¥, ¥³ub UPMOS ÕGœØZ‰J®ƒÓ‹ôbvÈ, 6ÿu±QPÓä0íñí −„Ú9Dä0í_Ò !‹àÇ3.5, ªJõƒÊ−„Ú9* 0.6V-1.8V, −„íä0¸ˇ* 0.27GHz-1.6GHz *,øı ‚à MOS ¯#−„PÓä0í-Z, Bbø−Ê−„Ú9Ñ1.8V -íPÓä0u0.38GHz, 7Ê¥³‚ऩQj°šÊ−„Ú9 1.8V -, F)ƒí−„ä0u0.27GHz, ªœ–VPÓä 0Áý7ì}5 29 FJ%âÁ§íÖ½˜í©Qj, üõªJ±QPÓíä0 [3.1†Ñ ©ø_−„Ú9-íPÓä0
3 ı Öä=PÓÂÚ˜5ql Ç 3.1: Á§íÖ½˜-Z Ç 3.2: Á§íÖ½˜PÓÂÚ˜ý<Ç
3.2
J MOS TÑÇÉ5}&
J NMOS TÑÇÉv, àÇ3.5, BbıÊû¦v ”Ä”Ú9ÄPó°, 6ÿuÊ C ÑòÚ Pv A D B íÚ9ÄPó°, ¤v VDS = 0 (3.1) #8•òÚPíÚ9, FJ VDS < VGS− Vt (3.2) FJBbø−, Úñ¤vuÍTÊú”–, wÚ¼íÉ[ [10]Ñ ID = µnCOX( W L)(VGS− VT)VDS− 1 2V 2 DS (3.3)3 ı Öä=PÓÂÚ˜5ql Ç 3.3: Á§íÖ½˜PÓÂ5ÕGÇ −„Ú9 ÀP PÓä0 ÀP 0.6 V 1.60 GHz 0.7 V 1.59 GHz 0.8 V 1.59 GHz 0.9 V 1.54 GHz 1.0 V 1.48 GHz 1.1 V 1.39 GHz 1.2 V 1.28 GHz 1.3 V 1.1 GHz 1.4 V 0.84 GHz 1.5 V 0.58 GHz 1.6 V 0.41 GHz 1.7 V 0.32 GHz 1.8 V 0.27 GHz [ 3.1: Á§íÖ½˜-Z−„Ú9Dä0[ âk VD ˛D VS ó°, FJ ID = µnCOX( W L)(VGS− VT)VDS (3.4)
3 ı Öä=PÓÂÚ˜5ql Ç 3.4: Á§íÖ½˜PÓÂÚ˜−„Ú9Dä0É[ Ç 3.5: NMOS ÇÉ † RON = ∂iD/∂V1 DS = L µnCOXW (VGS− VT) (3.5)
7ç VGS ükC6uk VT v,NMOS Úñ†ÍTÊi¢–, ¤v ROF F Ü;,†ÑÌÌ×,
7 NMOS …™íÚñí^@, 6úÚ˜ä0<í à, Í7w…™RONCÿ²ì7 NMOS
3 ı Öä=PÓÂÚ˜5ql P, †−„«•”íÚP, ‘.bòkÚÄÚ9 NMOS ÇÉí/<Ì„ÊJ CMOS ÇÉ·ªJ \j²,CMOS ÇÉ, àÇ3.6, CMOSÇÉÑøå NMOS ÚñDøå PMOS Úñ A, ç C õÑòÚPv,NMOS D PMOS îû¦, ç C õÑQÚPv, †s6·i¢, Uà CMOS í ßTu, ªø ”DÄ”ÚP…¯BDÚÄÚ9°šíÄP, U) A õD B õOuâkÖ7øå PMOS Úñq¶Úñí à, } àPÓíä0 Ç 3.6: CMOS ÇÉ
3.3
‚à NMOS ©Q(5Ú˜-ZD_Ò!‹
mͲ%7Ó0PÓä0íÖ½˜DÁMPÓä0íÖ½˜sÚ˜-Z, âks6ÉÏÊ Ú˜í©Qj, FJBbªJql~²ÇÉøsÚ˜!¯, qlíÇÉàÇ3.7, *Ç2ªõƒ Bbql A D B s_−„«, −„JÖ½˜C6u¥Ö½˜í©Qj, ç A ÑòÚP B Ñ QÚP, Ú˜ÑÓ0PÓä0íÖ½˜©Qj, ç A ÑQÚP B ÑòÚP, Ú˜ÑÁMPÓä0íÖ½˜©Qj, 7 C «†uQÊÖ½˜í S+ «C6u S-«, õuJ¨©Qj©
Q M(N) Níuø_Ï[×í|£«, M’(N) ÑÏí|Š«, UàÇÉ!¯(5-ZÇ, àÇ3.8, Ê S+ J£ S-íõîÇÉTÑ©Q Ú˜íý<Ç, àÇ3.9, *Ç2ªJõ ƒÚ˜íQj 7©Q(JÓ0PÓä0íÖ½˜©Qv_Ò!‹×ÛÊÇ3.10, Ê−„Ú9 * 0.6V-1.8V, © 0.1V _ÒøŸ, −„íä0¸ˇ* 1.44GHz-2.28GHz JÁ§íÖ½˜©Q v_Ò!‹×ÛÊÇ3.11, _ÒjD‹§Ö½˜ó°, −„íä0¸ˇ* 1.44GHz-2.28GHz *_Òí!‹6ªJõƒÊ‹p7 NMOS ÇÉ5(PÓíä0±QíÛï
3 ı Öä=PÓÂÚ˜5ql Ç 3.7: àJ©Q5NMOS ÇÉ A ÚP B ÚP ©Qj High Low ‹§íÖ½˜ Low High Á§íÖ½˜ [ 3.2: ÇÉD©Q˜É[ Ç 3.8: JÇÉ©Q‹§J£Á§íÖ½˜PÓÂ
3 ı Öä=PÓÂÚ˜5ql
Ç 3.9: ©Q5(5Ú˜ý<Ç
3 ı Öä=PÓÂÚ˜5ql −„Ú9 ÀP PÓä0 ÀP 0.6 V 2.28 GHz 0.7 V 2.26 GHz 0.8 V 2.24 GHz 0.9 V 2.2 GHz 1.0 V 2.16 GHz 1.1 V 2.1 GHz 1.2 V 2.04 GHz 1.3 V 1.96 GHz 1.4 V 1.86 GHz 1.5 V 1.76 GHz 1.6 V 1.68 GHz 1.7 V 1.58 GHz 1.8 V 1.44 GHz [ 3.3: xÇÉ5‹§íÖ½˜PÓÂ−„Ú9Dä0[ Ç 3.11: JÇÉ©Q(Á§íÖ½˜PÓÂ−„Ú9Dä0É[
3 ı Öä=PÓÂÚ˜5ql −„Ú9 ÀP PÓä0 ÀP 0.6 V 1.96 GHz 0.7 V 1.90 GHz 0.8 V 1.90 GHz 0.9 V 1.88 GHz 1.0 V 1.84 GHz 1.1 V 1.78 GHz 1.2 V 1.62 GHz 1.3 V 1.46 GHz 1.4 V 1.08 GHz 1.5 V 0.76 GHz 1.6 V 0.50 GHz 1.7 V 0.38 GHz 1.8 V 0.32 GHz [ 3.4: xÇÉ5Á§íÖ½˜PÓÂ−„Ú9Dä0[
3.4
óPÆm
úkø_Ü;í£ýPÓÂ, }ßÞøÜ;í|š, s(t) = Asin(ωt) (3.6) OuâkóPÆmí à, õÒ,íš}Ñ s(t) = Asin(ωt + φ(t)) (3.7) w2φ(t)NíÿuóPÆm, óPÆmí[ÛúPÓÂí[Û à'×, ¥u'½bí5?ÄÖ, F JÊ¥³BbòQ‚à Spectre RF,ñ _ÒÊÌ NMOS ÇÉvÓ0PÓä0íÖ½˜-í óPÆm, J£ÊJ NMOS ÇÉ©Q5(Ó0PÓä0Ö½˜J£ÁMPÓä0Ö½˜©Q jíóPÆm, w!‹×ÛÊÇ3.12 Ç3.13J£Ç3.14 ªJõƒÊ‹§íÖ½˜-Z-2-ä0Ñ 2.3GHz v, Rä0 (offset frequency) Ñ100kHz vwóPÆmÑ-96.35dBc/Hz, ÊR ä0Ñ 1MHz vwóPÆmÑ-116.3dBc/Hz 7ÊJ NMOS ÇÉ©Q5(, ÊÓ0PÓä0í Ö½˜©Qj-, 2-ä0Ñ 2GHz, Rä0Ñ 100kHz vwóPÆmÑ-95.77dBc/Hz, Ê Rä0Ñ 1MHz vwóPÆmÑ-115.8dBc/Hz ÊÁMPÓä0íÖ½˜©Qj-, 2-ä0Ñ 0.67GHz, Rä0Ñ 100kHz v, wóPÆmÑ-85.46dBc/Hz, ÊRä0Ñ 1MHz v, wóPÆmÑ-105.5dBc/Hz3 ı Öä=PÓÂÚ˜5ql
Ç 3.12: Ö½˜-Z2-ä0Ñ2.3GHz v5óPÆmÇ
3 ı Öä=PÓÂÚ˜5ql
4 ı
_Ò!‹Dªœ
Ê_Ò2, Ú˜íÚ˜jKÌSà TSMC 0.18 µm 1P6M CMOS `˙, Ç4.1 uÚ˜0 Ç, øuÖ _[×, ¤Ú˜FÛbíÚÄÚ9u1.8V , -Ú˜F2Þ Ñ 226.1 X 112 mm2 Ê-Þ†×Û7_Òí!‹J£FqlíPÓÂd[J£(4 Ç 4.1: Ú˜0Ç Ç4.2 F×ÛíuÇ4.1 2íw2øÏ[רÇÉÚ˜í0Ç, *Ç2ªJõƒÚñ í§8$, PMOS¶}ûåÚñ, }uÖ½˜J£TÑ0íÚñ®så,NMOS ¶}†Î7p«JÕ´¨72Èsåœü, àV−„ËÓä0íÚñ, 7Ç2¬i†uÇÉÚ ˜, u‚àûå NMOS ©QƒÖ½˜íp«, ÊqljÞ5?ƒú˚4, FJ©øÏí-Z·uà¤, Í(øDø5Èí©QjuJ=Õí÷¶, Jfn}/<Ï5ÈíÀ˘© Q(ØÅ7¨AÊ/<ÏíôbvȜŠ, °v6.øÚñÔØ¡Jfnó à4.1
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Ç 4.2: Ï[×ø50Ç
#8ql6 T_Ò, J5?ƒ.°Ëj\`¨|íÒu´°šªJ£ T, Î7™Äí TT 5
_Ò!‹5Õ, Ê¥³Bb´Uà FF(Fast NMOS Fast PMOS) J£ SS(Slow NMOS Slow
PMOS) ¥s”«í8$ T_Ò, Ç4.3 F×ÛíuÊ TT _-J‹§íÖ½˜©Qj í_Ò!‹, −„Ú9* 0.6V-1.8V, PÓä0¸ˇªâ 0.96GHz-1.8GHz Ç4.4 F×Ûíu Ê TT _-JÁ§íÖ½˜©Qjí_Ò!‹, −„Ú9* 0.6V-1.8V, PÓä0¸ˇâ 0.32GHz-1.58GHz ªœø-Ê TT _-(«_Ò‡«_Òí!‹, ʇ«_ÒvÊ−„Ú 9Ñ 0.6V v, ä0ªJ®ƒ2.28GHz, OuÊ(«_ÒvBbõƒ°šÊ−„Ú90.6V -PÓä 0É 1.8GHz, ×ɇ«_Òä0íì}5þ , FJ0íxÍ´.âb‹# Ç4.5 F ×ÛíuÊ FF _-J‹§íÖ½˜©Qjí_Ò!‹, −„Ú9* 0.6V-1.8V, PÓä0 ¸ˇâ 1.14GHz-2.1GHz Ç4.6F×ÛíuÊ FF _-JÁ§íÖ½˜©Qjí_Ò!‹, −„Ú9* 0.6V-1.8V, PÓä0¸ˇâ0.38GHz-1.82GHz Ü,Ê FF í_-, _Ò|Ví PÓä0@vbªÊ TT -´b0, *!‹ªJõƒ, Ê−„Ú90.6V -, ä0ªJ®ƒ2.1GHz, 7Ê TT -Ñ1.8GHz, ¯¯BbFら0í!‹ Ç4.7F×ÛíuÊ SS _-J‹§í½˜ ©Qjí_Ò!‹, −„Ú9*0.6V-1.8V, PÓä0¸ˇâ0.8GHz-1.54GHz Ç4.8F×Û íuÊ SS _-JÁ§íÖ½˜©Qjí_Ò!‹, −„Ú9*0.6V-1.8V, PÓä0¸ˇâ 0.28GHz-1.34GHz 7Ü,Ê SS í_-, _Ò|VíPÓä0@vbªÊ TT -´bVí M, *!‹6ªJõƒ, Ê−„Ú9 0.6V -, ä0É®ƒ 1.54GHz, 7Ê TT -Ñ 1.8GHz, °š ¯¯BbFã‚PÓ§}‰Mí!‹ [ 4.1 †ucÜ7,H_Ò8$í!‹, [ 4.2 †uF qlíPÓÂd[ 5(Bby‹, TSMC ™Ä PAD D³ PAD í_ÒTªœ‹7 PAD 5
4 ı _Ò!‹Dªœ PAD F©Qíõ˛%™ýÊÇ2, }uÚÄÚ9Qõ VDD QËõ VSS −„Ú9«õ Vctrl NMOSÇÉís_~²−„ Vctrla ¸ Vctrlb J£PÓÂw2s«í| Vout1 ¸ Vout2 Ç 4.12 Ñ|š, ªõƒQ PAD µøí|š§ƒ PAD íÚñ à,¯§ÁM Ç 4.3: ÊTT _-‹§Ö½˜Ú˜−„Ú9Dä0É[
4.2
(4
Ê¥³Bb6ú(4T}&, 5‡í_ÒuJÚ9ȽÑ0.1V TøŸ_Ò, ª)ƒ.°−„Ú9 -íPÓä0, Í(åAPÓš Ê¥³Bbv|©s_š2Ƚí−„Ú9DPÓä05é 0, yø!‹åAÇ$, हªõ|é0퉓, 7)ø/ø¸ˇ2(4íß; dWÑÈ½Ú 9í2-õ, à0.6V ¸0.7V sõÈíé0, ÿ¦0.65V çT X W,Y WÑsȽõíä0óÁy ÎJȽÚ9 0.1V, 7)ƒé0 Ç 4.13 B 4.18 ÿu,.°_-šíé0‰“, âé0¹ª õ|(4í[Û4 ı _Ò!‹Dªœ
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4 ı _Ò!‹Dªœ
Ç 4.6: ÊFF _-Á§Ö½˜Ú˜−„Ú9Dä0É[
4 ı _Ò!‹Dªœ
Ç 4.8: ÊSS _-Á§Ö½˜Ú˜−„Ú9Dä0É[
4 ı _Ò!‹Dªœ Ú˜-Z −„Ú9 ÀP −„ä0¸ˇ ÀP ‹§5Ö½˜Ú˜ 0.6-1.8 V 1.72-2.54 GHz Á§5Ö½˜Ú˜ 0.6-1.8 V 0.27-1.6 GHz xÇÉ5‹§Ö½˜Ú˜ 0.6-1.8 V 1.44-2.28 GHz xÇÉ5Á§Ö½˜Ú˜ 0.6-1.8 V 0.32-1.96 GHz («_Ò TT xÇÉ5‹§Ö½˜ 0.6-1.8 V 0.96-1.8 GHz («_Ò TT xÇÉ5Á§Ö½˜ 0.6-1.8 V 0.32-1.58 GHz («_Ò FF xÇÉ5‹§Ö½˜ 0.6-1.8 V 1.14-2.1 GHz («_Ò FF xÇÉ5Á§Ö½˜ 0.6-1.8 V 0.38-1.82 GHz («_Ò SS xÇÉ5‹§Ö½˜ 0.6-1.8 V 0.8-1.54 GHz («_Ò SS xÇÉ5Á§Ö½˜ 0.6-1.8 V 0.28-1.34 GHz [ 4.1: .°-Z-−„Ú9Dä05d[ ¡b bM ÀP pÚÄÚ9 1.8 V Ú9−„¸ˇ 0.6-1.8 V −„ä0¸ˇ 0.32-1.8 GHz |í¼ú¼PÙ|üM 1.67 V ̾Š0 91.4 mW óPÆm -115.8 dBc/Hz (2-ä0 2GHz, Rä0Ñ 1MHz 8”-) [ 4.2: êcÚ˜5d[
4 ı _Ò!‹Dªœ
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4 ı _Ò!‹Dªœ
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4 ı _Ò!‹Dªœ
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4 ı _Ò!‹Dªœ
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5 ı
!
5.1
!
…dT|øÁ§íÖ½˜-Z, wh1uâd. [4] 2íÖ½˜Fô.|V kf $·‚à MOS ¯#−„ä0í=$PÓÂ(Ring Oscillator)[5], ÄÖ½˜í‹p, T¯7 ®[×¥@í§, Ä7TòPÓÂíä0; Bbu‚à¥Qíj, 7U®[×¥@í§± Q, Ä7UPÓÂíä0-± पU)PÓÂyQíPÓä0 5(y‚àNMOS TÑ~² ÇÉ, ø‹§DÁ§íÖ½˜Ú˜©QÊø–, à¤øV%â NMOS ÇÉí−„, ªl}Aù_ ä; y%â®[×5ôbvÈ−„, ¹ª$As_ä0|c¸ˇ5Ú9−„PÓÂ, wªJ®ƒ œ íä0|c¸ˇ …d1qløQ íÚ9−„PÓÂ, BblJ SPICE ,ñ_Òw Ê.°−„Ú9-í−„PÓä0, |(yø¤Ú˜0, d(«_Ò ÊpÚÄÚ9Ñ1.8V -, %⇫_Ò, ¤Ú˜Ê−„Ú9Ñ 0.6V-1.8V v, ¤Ú˜í−„ä0¸ˇÑ 0.32GHz-2.4GHz; â(«_Ò, ¤PÓÂ5PÓä0ª®ƒí|c¸ˇÑ 0.32GHz-1.8GHz â¤_Ò!‹ªø, â k0vFßÞíÆà•ÞÚñí à, Ú˜íPÓä0±Q 6âk PAD í‹p}U)šZ ‰, FJBb6.âql buffer JÁý à
¡5d.
[1] B. Razavi, Design of Analog CMOS Integrated Circuits, McGraw-Hill, 2001.
[2] S.-J. Lee, B. Kim, and K. Lee, “A Novel High-speed Ring Oscillator for Multiphase Clock Generation Using Negative Skewed-delay Scheme,” IEEE J. Solid-State Cir-cuits, vol. 32, pp. 289-291, Feb. 1997.
[3] A. Ong, S. Benyamin, J. Cancio, V. Condito, T. Labrie, Q. H. Lee, J. P. Mattia, D. K. Shaeffer, A. Shahani, X. Si, H. Tao, M. Tarsia, W. Wong and M. Xu, “A 40-43-Gb/s clock and data recovery IC with integrated SFI-5 1:16 demultiplexer in SiGe technology,” IEEE J. Solid-State Circuits, vol. 38, pp. 2155 - 2168, Dec. 2003. [4] Y. A. Eken and J. P. Uyemura, “A 5.9-GHz Voltage-Controlled Ring Oscillator in
0.18-µm CMOS,” IEEE J. Solid-State Circuits, vol. 39, pp. 230-233, Jan. 2004. [5] C. H. Park and B. Kim, “A Low-Noise, 900-MHz VCO in 0.6-µm CMOS,” IEEE J.
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