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高介電氧化層MOSFET元件之低漏電電荷幫浦量測技術

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Fig. 2.1    Schematic illustration of device with different Halo implant species. (a) using light  atomic mass unit implant in Halo(1);(b) using heavy atomic mass unit implant in  Halo(2)
Fig. 2.2  The experiment setup  for  the current- voltage  measurement. An automatic  controlled characterization system is set up based on the PC controlled  instrument environment
Fig. 2.3 Basic experimental setup  for  the charge pumping  measurement.
Fig. 2.4 The schematic of charge pumping (CP)  for
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