砷化銦/砷化銦鎵量子點中砷化銦厚度對缺陷的電子放射與捕捉影響之研究
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(2) 砷化銦/砷化銦鎵量子點中砷化銦厚度對 缺陷的電子放射與捕捉影響之研究 InAs Thickness Dependence of Carrier Emission and Capture from Defects in InAs/InGaAs dots-in-a-well Structure. 研 究 生：林士傑. Student：Shih-Chieh Lin. 指導教授：陳振芳 博士. Advisor：Dr. Jenn-Fang Chen. 國 立 交 通 大 學 電子物理研究所 碩 士 論 文. A Thesis Submitted to the Institute of Electrophysics College of Science National Chiao Tung University in partial Fulfillment of the Requirements for the Degree of Master of Science in Electrophysics June 2004 Hsinchu, Taiwan, Republic of China. 中華民國九十三年六月.
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