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三端點與四端點的射頻金氧半電晶體模型參數萃取方法之建立及等效電路模擬之驗證

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國立交通大學

電子工程學系 電子研究所

碩士論文

三端點與四端點的射頻金氧半電晶體模型參數萃取方法之建立及

等效電路模擬之驗證

Three Terminal and Four Terminal RF MOSFET Model

Parameter Extraction Methods Development and

Verification by Equivalent Circuit Simulation

研究生:葉致廷

指導教授:郭治群 教授

(2)

三端點與四端點的射頻金氧半電晶體模型參數萃取方法之建立及

等效電路模擬之驗證

Three Terminal and Four Terminal RF MOSFET Model

Parameter Extraction Methods Development and

Verification by Equivalent Circuit Simulation

研究生:葉致廷 指導教授:郭治群 博士

Student:Chih-Ting Yeh Adviser:Dr. Jyh-Chyurn Guo

國立交通大學

電子工程學系 電子研究所

碩士論文

A Thesis

Submitted to Department of Electronics Engineering & Institute of Electronics College of Electrical and Computer Engineering

National Chiao Tung University in partial Fulfillment of the Requirements

for the Degree of Master In

Electronics Engineering August 2006

Hsinchu, Taiwan, Republic of China

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