Design, Fabrication, Characterization, and Application of Semiconductor Nanocomposites

Design, Fabrication, Characterization, and Application of Semiconductor

Nanocomposites

Yang-Fang Chen

Department of Physics ,

National Taiwan University,

I.  A perfect integration of zero and one

dimensional nanomaterials for photodetectors with ultrahigh gain and wide spectral response.

II.  Photon down conversion and light trapping in hybrid ZnS nanopartcles/Si Nanotips solar cells.

III. Light fountain composed of photonic crystals and semiconductor nanowires.

IV.  Liquid crystals and CdSe nanotubes

nanocomposites for smart emission devices.

V.  Liquid crystal devices with built-in solar cells.

VI. An Advanced Alternative for Electrically

Tunable Light Emitters: Graphene/SiO₂/p-GaN Diodes.

I.A perfect integration of zero and one dimensional nanomaterials for photodetectors with ultrahigh gain and wide spectral response.

1.Motivation

Nanowire: good conductor, good field emitter, good sensor, anisotropic properties…etc.

Quantum dot: large absorption coefficient, tunable band gap, good light emitter, photonic crystals…etc.

What kind of novel properties can we discover by the integration of QDs and NW?

To obtain single nanowire photodetector with ultrahigh and wide spectral response.

PHOTOCONDUCTIVITY

As the incident light with photon energy is larger than the energy gap of the semiconductor,

electron-hole pairs are produced by the absorbed photons, result in the increment of conductivity.

hν

A

2.Sample design and underlying principle

i) Sample design

The integration of zero (semiconductor quantum dots) and one dimensional (nanowire) nanomaterials.

QD-NW COMPOSITE DEVICE

8 µm

ii) Underlying principle

a)  quantum dots have a high absorption coefficient.

b)  Nanowire provides an excellent conduction path.

c)  A suitable selection of energy band alignment (type II) between QD and NW enables to cause the spatial separation of photogenerated electron and hole.

d)  The coupling strength between QD and NW is enhanced by the inherent nature of the large surface to volume ratio of nanomaterials.

e)  QDs and NW have different spectral response.

3. Results and discussion

DARK CURRENT MEASUREMENT

-0.2 -0.1 0.0 0.1 0.2

-4.0x10^-8 0.0 4.0x10^-8

Current (A)

Voltage (Volt)

CdSe+SnO2 SnO2

I-V characteristics of the pristine SnO₂ NW and the CdSe quantum dots decorated NW  

0 40 80 0.0

1.0x10^-8 2.0x10^-8 3.0x10^-8

10 100 1000

3 4 5

Enhancement

W / m²

Δ i (A)

Time (s)

SnO₂ CdSe + SnO₂

50 100 150

0.0 1.0x10^-9 2.0x10^-9 3.0x10^-9

Δ i (A)

Time (sec) CdSe+SnO2

Photoresponse of the two samples with a bias of 0.1 V and under the illumination of a He- Cd laser (325nm) with an excitation intensity of 100 W/m². (Inset: The relation between the illumination power and the photocurrent

enhancement.)  

Photoresponse of CdSe QDs decorated SnO₂ NWs under the illumination of green laser (532nm) with different excitation intensity of 2.5, 6, 9.5, 376 W/m²,

respectively.  

PHOTOCURRENT MEASUREMENT

New findings:

After the decoration of CdSe QDs:

i) The photoresponse is greatly enhanced.

ii)The spectral response can be extended to the

visible region (the band gap of QDs).

MECHANISM

10 100

10²

10³ K ~ 0.57

Gain

W / m2

Photoresponse gain contributed by CdSe QDs as a function of

illumination intensity at excitation wavelength of 325 nm.

CONCLUSION

• 

In summary, CdSe QDs decoration has been utilized to enhance the photoresponse in SnO

NWs drastically, even if the photon energy is not large enough to induce electron-hole pairs in NWs.

• 

The photoresponse spectrum can be extended

to include different wavelengths by decorating

suitable QDs.

II. Photon down conversion and light trapping in hybrid ZnS nanoparticles/Si Nanotips

solar cells

Motivation

Ec

●

Frequency Downconversion

●○

●

●

E

n p

UV light Visible

Ec

ZnS QDs

•  Amongst all Ⅱ-Ⅵ semiconductor NPs, ZnS is a promising candidate for PV applications because of its nontoxicity, low cost, high refraction index and abundance in earth.

•  ZnS is a wide band gap material.

0.0 0.2 0.4 0.6 0.8 1.0

PL Intensity (counts/10 5)

0.00 0.25 0.50 0.75 1.00 1.25

 PLE (a.u.)

(a) (b)

Device fabrication

p-type Si silicon tips

thermal diffusion Ag annealing + RIE

n+/p junction

spread ZnS QDs

metallization metallization

PSG removing + edge isolation + surface passivation

Device Structure

p-substrate Finger electrode

Rear Al electrode n⁺emitter

The thickness of the ZnS layer is about 30 nm ~ 50 nm (for the concentration of 6 mg/mL), depending on the position of silicon nanotips.

I-V characteristics under AM1.5 illumination

The comparison highlights the fact that 6 mg/mL ZnS NPs are effective in increasing the short-circuit current density from 18.9 to 22.7 mA/cm² and Voc remains the same.

External Quantum efficiency

For the spectral response above 425 nm, since there is no PLE signal from ZnS NPs, frequency down conversion can not entirely account for the enhancement of EQE.

Reflectance

Complementary Experiments

•  We have attempted PbS and CdSe QDs, but the results are not as good as that of ZnS QDs on silicon tips solar cells.

•  PbS QDs are intrinsic p-type materials, and thus form an opposite direction of p-n junction to the original one.

•  CdSe QDs on top of the cell absorb and diminish the numbers of visible photons and thus the enhancement is less than ZnS QDs even though they have a good quantum yield.

Conclusion

We have shown that the hybrid system can significantly enhance power conversion efficiency under AM1.5 illumination. The underlying mechanism of the enhancement can be attributed to frequency down conversion as well as light trapping.

We believe that this approach may find promising applications in silicon-based solar cells and open a new possible scheme to explore semiconductor NPs for energy devices.

III. Light fountain composed of photonic crystals and semiconductor nanowires

1. Motivation

Semiconductor nanowires possess many unique properties attracting scientific as well as industrial interests.

Photonic crystals own the formation of photonic band gap leading to various applications, including waveguides, emitters, filters, reflectors,…,etc.

What kinds of properties can be created, if both

photonic crystals and semiconductor nanowires are combined together?

2. Material

Photonic crystals: Tb(OH)₃/SiO₂ core/shell

nanoparticles Tb atom provides stable, strong, and narrow multiple emissions covering from UV to visible range.

SiO₂ shell is very useful in manipulating inter- particle interaction and in biological targeting application.

Figure (a) Scanning electron microscope (SEM) image of fcc close-packed lattice structure of Tb(OH)₃/SiO₂ core/shell nanospheres (d = 250 nm) (b) Transmittance

spectrum of Tb(OH)₃/SiO₂ photonic crystals, which clearly displays the formation of stop band.

Semiconductor nanowires: SnO₂ nanowires

a wide band gap semiconductor (3.6 eV), good emitter, sensor, and waveguide…

Figure 2. (a) Scanning electron microscope (SEM) image of SnO nanowires on Tb(OH) /

3. New finding

The nanocomposite consisting of photonic crystals and semiconductor nanowires acts like a light

fountain.

The periodic structure of SiO₂ nanoparticles

confines the emission of Tb atoms inside photonic crystals.

SnO₂ nanowires serve as waveguides to extract light out of photonic crystals.

4. Results and discussion

300 400 500 600 700

0 20000 40000 60000

Tb 250nm/SnO₂ Tb 250nm

CL intensity (cps)

Wavelength (nm)

65120

7420

a)

Without SnO nanowires, the emission intensity is very small.

Power dependence

1.2 1.6 2.0

60µJ 83µJ 102µJ

Intensity

b)

Lasing behavior can be easily achieved based on light fountain.

300 350 400 450 500 550 1.04

1.08 1.12 1.16 1.20 1.24 1.28

80 120 160 200

1.075 1.100 1.125 1.150

Intensity(a.u.)

Pumping energy (µJ)

Intensity(a.u.)

Wavelength(nm)

73µJ 103µJ 162µJ 200µJ

d)

5. Summary

  A new nanocomposite consisting of photonic

crystals and semiconductor nanowires have been designed.

‚  This new nanocomposite can act like a light fountain.

ƒ  Light fountain can easily achieve lasing action.

IV. Liquid crystals and CdSe nanotubes nanocomposites for smart emission devices

1. Motivation

It has been shown that one-dimensional

semiconductor nanostructures have many unique properties, including thermal, electrical, optical, chemical, and mechanical properties.

The next step is to integrate them with existing

technologies to realize their potential applications.

2. Basic principle

Due to the high surface to volume ratio of one dimensional nanostructures, it enhances the interaction between nanowires and its

environment.

Therefore, if we intentionally incorporate nanowires in a LC device, it is possible to

manipulate the properties of one-dimensional semiconductors through the interaction

between LC and nanowires.

3. Sample structure

4. Experimental results

It shows that with the assistance of liquid crystal molecules, the CdSe nanotubes are well aligned along the rubbed PI direction.

We therefore provide a convenient way to obtain well aligned nanotubes.

The above result arises from the reorientation of CdSe

Degree of polarization as a function of external bias.

The saturation above 3V is consistent with the voltage

The magnitude of the measured optical anisotropy can be understood in terms of the dielectric contrast

between the nanotube and LC. When the polarization is perpendicular to the cylinder, the electric field is

attenuated by a factor of

σ=2Є

/( Є

+ Є

),

and the anisotropic ratio

r=(1-σ

)/(1+σ

) r=0.72,

which is in good agreement with the experimental value of 0.68.

To demonstrate that the observed polarized emission is due to well aligned CdSe nanotubes, a device consisting of DI water and CdSe nanotubes has been fabricated.

A LC device consisting of LCs and CdSe nanoparticles has also been fabricated.

This result shows that without the intrinsic anisotropy of CdSe nanotubes, the optical polarization can not be

5. Conclusion

  An alternative way of obtaining well aligned nanowires has been provided.

‚  Most importantly, it is possible to manipulate emission anisotropy electrically based on the device consisting of LCs and semiconductor nanotubes.

ƒ  Electrically driven emission polarization of LCs-NTs

composite devices can open up new applications for one- dimensional nanostructures in many smart devices

utilizing well mature LCD technologies.

This work has been selected as Research News in

V. Liquid crystal devices with built- in solar cells

1. Motivation

The existing technology of LCD is using electric field to drive liquid crystals.

Can we drive LC by a light beam without an

external bias?

2. Basic principle

It is well known that a semiconductor

Schottky diode can generate photo-voltage under light illumination.

If we can build such solar cells in LC

devices, it has a good chance to drive LC optically.

3. Sample structure

Experiment – instrument setup

polarizer

analyzer 660 nm laser 488 nm laser

spectrometer microscopy

The 660 nm laser is used to detect the signal of liquid crystal and 488 nm laser is used to generate the

(band filter is included)

controlled birefringence mode (ECB-LCD). Then we can calculate the variations of pretilt angle in LC from the

optical measurement using the following equations:

(crossed polarizers)

where T is the transmission , is the phase retardation , n_e and n_o are the principal refractive indices of the LC, is the

[ ( ) ]

( )

2 2

2 2

2

cos sin

1 2

sin 2 2

1

e o

e

o e

n n

n

dz n

n

θ θ

θ λ θ

π

+

=

−

= Γ

= Γ Τ

∫

Γ θ

4. Conclusion

We therefore have successfully

demonstrated that LC devices can be derived optically.

It opens a new avenue for the LC devices.

It also serves as a new pathway for the

interplay between semiconductors and

LCs research.

V. An Advanced Alternative for Electrically Tunable Light Emitters: Graphene/SiO

/p- GaN Diodes

1.Motivation

Graphene is a single layer of carbon with exceptional properties, such as high electron and hole mobility, high transparency, and high robustness.

Combining with current semiconductor technology, one should be able to create novel devices.

An alternative for electrically tunable light emitters.

2.Sample design

Schematics of graphene/SiO₂/p-GaN MIS-LED (inset) AFM image of the graphene electrode and photograph of the device.

The 2D peak at ~2690cm^-1 and a small G/2D ratio show

The transmittance spectra show high transparency of graphene compared with Au thin films.

The characteristics of I_ds vs. Vg of the graphene FET exhibits a Dirac point at around 30V, corresponding to a

Photoluminescence spectrum of p-GaN at room

temperature.

3.Results and discussion

Electroluminescence spectra of graphene/SiO₂/p-GaN

Electroluminescence spectra of graphene/SiO₂/p-GaN MIS-LEDs under reverse bias at different injection currents at room temperature.

Energy band diagram of graphene/SiO₂/p-GaN MIS-LED

The integrated intensity I vs applied bias V can be explained well by the tunneling model

Comparison of EL spectra between graphene/SiO₂/p-GaN and Au/SiO₂/p-GaN

4.Conclusion

•  A new MIS-LED with tunable emission spectra under forward and reverse biases has been developed.

•  The new device is made possible by taking advantage of high trans par ency and conductivity of graphene.

•  The underlying principle of the MIS-LED arises

from the tunneling of electrons and holes, which

is different from the standard p-n junction.

5. Light emission memories for electrical and optical communication

Integration of different devices to create new functionalities.

An easy way to integrate memory and light

emitting diode to generate a new device called

light emitting memory.

Schematics of light-emitting memory (LEM).

V

Electrode

Electrode Substrate

Functional layer

l  Emerging resistive switching memory

Ø Emerging resistive-type memory devices:

l  Advantages of resistive-type memory:

1. Simple structure 2. Facile fabrication

3. Low operation voltage 4. Low cost

5. Roll-to-roll printing

6. Scaling down and 3D stackability

7. High speed for writing, erasing and reading l  Resistive switching memories by 3D cross-bar structure

I-V characteristics of Ag/SiO₂/graphene memory cell. The inset shows

I-V characteristics of light-emitting memory (LEM). The inset shows electroluminescence (EL) intensity of LEM as a function of voltage at high resistance state (HRS) and low resistance state (LRS). It has a

•  The simplest structure of light emitting memories.

•  Easy fabrication and high feasibility for practical application.

•  Enable for both electrical and optical

communication, which is very different from the conventional electrically

readable memory devices.