A study of biasing crystallized on structural and electrical properties of ZITO film

2011 Internati

A study of bias crystallized mecha A study of bias-crystallized mecha properties of Zn-In-Sn-O film

properties of Zn-In-Sn-O film

Kuan-Jen Chen

Fei-Yi Hung

Shoou-Jinn Chang

Kuan-Jen Chen , Fei-Yi Hung , Shoou-Jinn Chang ,

1

Institute of Nanotechnology and Microsystems Enginee

1

Institute of Nanotechnology and Microsystems Enginee

N i l Ch K U i

National Cheng Kung Unive

2

2

Institute of Microelectronics & Department of Electri Engineering, National Cheng Kung g g, g g

3

Institute of Electro-Optical Science and Engineering Ce Institute of Electro Optical Science and Engineering,Ce Cheng Kung University Cheng Kung University

* Corresponding author: fyhung@mail ncku edu tw Corresponding author: [email protected]

T Ab ^Abs

T he ZITO films were deposited onto indium/glass quality of ZITO films, the biasing crystallized mechan quality of ZITO films, the biasing crystallized mechan for 30 min) the resistivity of ZITO film reduced fro for 30 min), the resistivity of ZITO film reduced fro diffused in ZITO film by bias induced Joule heat was diffused in ZITO film by bias-induced Joule heat was

i di d d i ZITO l d i h d i

indium was doped in ZITO resulted in the reduction formation of micro-cavity structures associated with t bias-induced Joule heat. According to the Joule’s law g was only 720 Joule Comparing with traditional anne was only 720 Joule. Comparing with traditional anne not only effectively improved the conductivity of ZITO not only effectively improved the conductivity of ZITO

Figure 2 The relat biasing duration and temperature biased at 4

Figure 3 The relation of g duration and film re under the biasing voltag with 0.1 A

Figure 1 The schematic illustration of g Figure 3 XRD pattern biased crystallized for ZITO film. y grown ZITO film and Z

with biasing of 4V.

Paper ID: PTU 21 Paper ID: PTU 21

ional Symposium on Nanoscale Transport and Technology

anism on structural and electrical anism on structural and electrical

Sheng-Po Chang

Zhan-Shuo Hu

Kuang-Wei Liu

, Sheng-Po Chang , Zhan-Shuo Hu , Kuang-Wei Liu ering Center for Micro/Nano Science and Engineering ering, Center for Micro/Nano Science and Engineering,

i T i 701 TAIWAN ersity, Tainan 701, TAIWAN

ical Engineering, Center for Micro/Nano Science and g University, Tainan 701, TAIWAN

g y, ,

enter for Micro/Nano Science and Technology National enter for Micro/Nano Science and Technology, National y Tainan 701 TAIWAN

y, Tainan 701, TAIWAN

t t stract

s substrate by co-sputtering system. To promote the nism was used. After biasing treatment (biased of 4 V nism was used. After biasing treatment (biased of 4 V om 3 08×10

Ω*cm to 6 3×10

Ω*cm Indium ions om 3.08×10 Ω cm to 6.3×10 Ω cm. Indium ions s one of reason Also XRD data confirmed that the s one of reason. Also, XRD data confirmed that the

f I O h i i F SEM i h

n of In

O

phase intensity. From SEM images, the the lattice mismatch (between indium and ZITO) and w and Ohm’s law, the input power of biasing treatment , p p g aled treatment (500

C for 30 min) biasing treatment aled treatment (500 C for 30 min), biasing treatment

film but also greatly decreased the cost film, but also greatly decreased the cost.

tion of induced 4 V.

Figure 5 (a) (c) The surface morphology (b) (d) the Figure 5 (a) (c) The surface morphology, (b) (d) the cross-section image of as-grown ZITO film and ZITO f biasing

cross-section image of as-grown ZITO film and ZITO film with biasing of 4 V for 30 min.

g esistivity

film with biasing of 4 V for 30 min.

ge of 4 V

ns of as-

ITO film