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[PDF] Top 20 A 1-V CMOS VCO for 60-GHz applications

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A 1-V CMOS VCO for 60-GHz applications

A 1-V CMOS VCO for 60-GHz applications

... designed for 60-GHz applications has attracted growing interest worldwide because of the availability of the unlicensed 7-GHz bandwidth and numerous obvious ...Many applications ... See full document

4

A 3.1 similar to 10.6 GHz CMOS direct-conversion receiver for UWB applications

A 3.1 similar to 10.6 GHz CMOS direct-conversion receiver for UWB applications

... Besides, a dummy divider is placed at buffer Q output to minimize the output amplitude and phase mismatch of the carrier ...proposed CMOS VCO circuit schematic and its inductor ...proposed ... See full document

4

Wide Tunning Range 60 GHz VCO and 40 GHz DCO Using Single Variable Inductor

Wide Tunning Range 60 GHz VCO and 40 GHz DCO Using Single Variable Inductor

... of CMOS RF ICs for cellular and wire- less LAN ...now a full ...circuit for wireless and wireline communication systems, with special emphasis on Serdes, high speed interface, optical ... See full document

11

A 2-V low-power CMOS direct-conversion quadrature modulator with integrated quadrature voltage-controlled oscillator and RF amplifier for GHz RF transmitter applications

A 2-V low-power CMOS direct-conversion quadrature modulator with integrated quadrature voltage-controlled oscillator and RF amplifier for GHz RF transmitter applications

... chip for 1.9 -GHz DECT transmitter ...modulator for DECT transmitter application has been ...suitable for other RF transmitter ... See full document

12

High-performance fully integrated 4 GHz CMOS LC VCO in standard 0.18-μm CMOS technology

High-performance fully integrated 4 GHz CMOS LC VCO in standard 0.18-μm CMOS technology

... LC VCO CMOS VCOs with integrated inductors are well suited for wireless applications [8], ...effect, a VCO operating at twice the carrier frequency with a following ... See full document

4

Full-CMOS 2.4GHz LNA and VCO for ISM Band Wireless Communication 陳厚銘、王木俊

Full-CMOS 2.4GHz LNA and VCO for ISM Band Wireless Communication 陳厚銘、王木俊

... 5-GHz, CMOS VCO with 18% Tuning Range for Bluetooth Applications, ” IEEE 2001 Custom Integrated Circuit ...of 1/f Noise in Switched MOSFET Circuits”, IEEE TRANSACTIONS ON ... See full document

2

A Low-Phase-Noise K-Band CMOS VCO

A Low-Phase-Noise K-Band CMOS VCO

... 2006 A Low-Phase-Noise K-Band CMOS VCO Hsieh-Hung Hsieh, Student Member, IEEE, and Liang-Hung Lu, Member, IEEE Abstract—A novel circuit topology for low-phase-noise voltage controlled ... See full document

3

A Phase-Locked Loop With Injection-Locked Frequency Multiplier in 0.18-mu m CMOS for V-Band Applications

A Phase-Locked Loop With Injection-Locked Frequency Multiplier in 0.18-mu m CMOS for V-Band Applications

... paper, a novel CMOS phase-locked loop (PLL) integrated with an injection-locked frequency multiplier (ILFM) that generates the -band output signal is ...the VCO can be reduced to only one-fifth of ... See full document

8

A flexible mixed-signal/RF CMOS technology for implantable electronics applications

A flexible mixed-signal/RF CMOS technology for implantable electronics applications

... measured VCO frequency spectrum has the center frequency at ...1.08 GHz. frequency of the oscillator is 1.085 GHz and power dissipation is 16 ...from 1.015 GHz to 750 MHz ... See full document

9

Investigation of CMOS technology for 60-GHz applications

Investigation of CMOS technology for 60-GHz applications

... block for the proposed receiver architecture because it must offer decent gain and low noise figure for the 60-GHz ...the 60-GHz CMOS LNA has not been reported yet, ... See full document

4

A 0.6-V 30 GHz CMOS Quadrature VCO Using Microwave 1:1:1 Trifilar Transformer

A 0.6-V 30 GHz CMOS Quadrature VCO Using Microwave 1:1:1 Trifilar Transformer

... transistors, a passive transformer had been utilized for the quadrature signal generation ...as a modified version of the BS QVCO with better voltage headroom and eliminates the flicker noise of the ... See full document

3

A 1.8V 2.5-5.2 GHz CMOS dual-input two-stage ring VCO

A 1.8V 2.5-5.2 GHz CMOS dual-input two-stage ring VCO

... A delay cell used in VCO adopts both inductive-peaking and shunt-shunt feedback circuit techniques to attain high gain, low power and wide bandwidth performance.. 2004[r] ... See full document

4

Self-Matched ESD Cell in CMOS Technology for 60-GHz Broadband RF Applications

Self-Matched ESD Cell in CMOS Technology for 60-GHz Broadband RF Applications

... cells for 60-GHz broadband RF applications are presented in this ...complexity for RF circuit designer and provides suitable ESD ...in a commercial sub-100nm CMOS process, ... See full document

4

A 131 GHz push-push VCO in 90-nm CMOS technology

A 131 GHz push-push VCO in 90-nm CMOS technology

... Although it has been pointed out that differential cross-coupled pair cannot achieve high frequency oscillation due to the maximum attainable oscillation frequency [ [r] ... See full document

4

A wide operation range CMOS frequency divider for 60GHz dual-conversion receiver

A wide operation range CMOS frequency divider for 60GHz dual-conversion receiver

... The locking range of the injection-locked frequency divider is typically much less than the full unlicensed band around 60GHz, the voltage-controlled variable PMOS capacitors are added to the resonant tanks ... See full document

4

An Integrated CMOS Front-End Receiver with a Frequency Tripler for V-Band Applications

An Integrated CMOS Front-End Receiver with a Frequency Tripler for V-Band Applications

... first CMOS receiver integrated with the SFT in the millimeter-wave ...novel CMOS subharmonic frequency tripler is designed and fabricated by using ...timization for undesired harmonic suppression on ... See full document

7

An output buffer for 3.3-V applications in a 0.13-mu m 1/2.5-V CMOS process

An output buffer for 3.3-V applications in a 0.13-mu m 1/2.5-V CMOS process

... Fig. 1 shows a conventional tristate I/O buffer codesigned with thin- and thick-oxide ...Fig. 1, transistors P1 and N1 are thick-oxide devices, which can sustain the voltage level of ... See full document

5

Design and implementation of configurable ESD protection cell for 60-GHz RF circuits in a 65-nm CMOS process

Design and implementation of configurable ESD protection cell for 60-GHz RF circuits in a 65-nm CMOS process

... Acknowledgments This work was supported by Taiwan Semiconductor Manufac- turing Company (TSMC) and National Science Council (NSC), Tai- wan, under Contract NSC 98-2221-E-009-113-MY2. The authors would like to thank the ... See full document

10

A 9-GHz QUADRATURE-PHASE VCO IN 0.18-μm CMOS
9-GHz 正交壓控震盪器

A 9-GHz QUADRATURE-PHASE VCO IN 0.18-μm CMOS 9-GHz 正交壓控震盪器

... QUADRATURE-PHASE VCO IN 0.18- μ m CMOS 9-GHz 正交壓控震盪器 摘 要 本論文中將實現一個 9-GHz 的正交壓控震盪器。根據 量測所得,以切換式偏壓的改良式電流源可以降低相位雜 訊的大小;同時,所採用的二進位式切換電容,能夠有效 的提高可調頻率範圍。使用 CMOS ... See full document

5

Design of Compact ESD Protection Circuit for V-Band RF Applications in a 65-nm CMOS Technology

Design of Compact ESD Protection Circuit for V-Band RF Applications in a 65-nm CMOS Technology

... been a Full Professor with the Department of Electronics En- gineering, National Chiao Tung University, where he is currently the Distinguished ...Program for System-on-Chip, Taiwan, during 2010–2011 and is ... See full document

8

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