[PDF] Top 20 Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistors
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Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistors
... Institute of Physics. 关DOI: 10.1063/1.1511815兴 In analog and radio frequency circuits, polycrystalline silicon 共poly-Si兲 films are frequently used for resistors, the gate ... See full document
4
Low Frequency Noise in Nanoscale pMOSFETs with Strain Induced Mobility Enhancement and Dynamic Body Biases
... consisting of forward body bias (FBB), zero body bias (ZBB), and reverse body bias (RBB) was employed to explore the influence on ...theoretical analysis, the mechanism responsible for LFN in ... See full document
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The Impact of Layout-Dependent STI Stress and Effective Width on Low-Frequency Noise and High-Frequency Performance in Nanoscale nMOSFETs
... consists of an Agilent dynamic signal analyzer (DSA 35670) and low-noise amplifier (LNA ...density of drain current noise, ...LFN. In this paper, the LFN was measured from ... See full document
9
RESISTANCE SWITCHING CHARACTERISTICS IN POLYCRYSTALLINE SILICON FILM RESISTORS
... Thus the observation that tran- sition voltage reaches a m a x i m u m value around the criti- cal doping concentration can be understood by the fact that the highest [r] ... See full document
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MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS
... Absfract-The processing parameters of monolithic polycrystalline silicon resistors are examined, and the effect of grain size on the sensi- tivity of polysilicon res[r] ... See full document
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INVESTIGATION ON THE DISTRIBUTION OF FLUORINE AND BORON IN POLYCRYSTALLINE SILICON SILICON SYSTEMS
... W. ) unless CC License in place (see abstract).. The boron and fluorine distribution pro- files was obtained with a Cameca IMS-4f ion microana- lyzer using O~ primary ion bom[r] ... See full document
7
Evidence for capture of holes into resonant states in boron-doped silicon
... 1. In this situation the hole distribution in the momentum space will strongly displace from an isotropic one as a con- sequence of cyclic streaming motion in which optical pho- non scattering ... See full document
7
Electrical characteristics and annealing study of boron-doped polycrystalline diamond films
... Since the C-H content in the heavily doped .films reduces after annealing and C-B bond intensity increased, we suspect-that the conductivity increase is primarily a result o[r] ... See full document
3
Analysis of negative bias temperature instability in body-tied low-temperature polycrystalline silicon thin-film transistors
... bonds in the bulk channel region are assumed to be initially passivated by hydro- gen ...resulting in the gen- eration of bulk trap ...states in the gate ... See full document
3
Retardation in the chemical-mechanical polish of the boron-doped polysilicon and silicon
... comparison of removal of doped and un- doped poly-Si ...thickness in previous runs plus the half of the currently removed ...seen in Fig. 1, the removal rates for undoped ... See full document
3
The growth and Raman spectra of boron-doped silicon nanowires
... — Boron-doped silicon nanowires, synthesized under different temperatures and pressures, have been analysed by scanning electron ...diameters of silicon nanowires more seriously than ... See full document
4
Body-Tied Germanium Tri-Gate Junctionless PMOSFET With In-Situ Boron Doped Channel
... Abstract— In this letter, we demonstrate body-tied Ge tri-gate junctionless (JL) p-channel MOSFETs directly on ...through in-situ heavily doped technique and trimming down Ge fin ...is of ∼6 × ... See full document
3
Impact of Uniaxial Strain on Low-Frequency Noise in Nanoscale PMOSFETs
... the low-frequency noise char- acteristics and reports a new mechanism for uniaxial strained ...comparison of the input-referred noise and the trap density of the gate ... See full document
3
ANALYSIS OF TUNABLE FLAT DISPERSION OF GERMANIUM DOPED FIBER WITH LIQUID CLADDING
... 2. ANALYSIS FOR THE GVD OF HIGH Ge-DOPED FIBER CORE WITH LIQUID CLADDING Figure 1 shows the schematic diagram of the Ge-doped fiber core with liquid ...amount of Ge-doping, ... See full document
3
Threading Dislocation Induced Low Frequency Noise in Strained-Si nMOSFETs
... the low-frequency noise characteristics of the n-type strained-Si field-effect transistors are studied using the devices with different ...density of the gate referred voltage ... See full document
3
Low-frequency noise characteristics of epitaxial ZnO photoconductive sensors
... photocurrent of our ZnO MSM photoconductive sensor were ...responses of the fabricated ZnO photoconductive sensors measured with various applied bias ...independent of incident light wavelength ... See full document
3
Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors
... The ultrahigh vacuum chemical vapor deposition (UHVICVD) grown poly-Si was served as the channel film, the chemical mechanical polishing (CMP) technique was used to polish the channel[r] ... See full document
3
A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires
... erties of the JL and IM SONOS memory ...concentration in the heavily doped NW channel, thus enhancing the tunneling probability of carrier injection into the nitride trapping ...number ... See full document
6
Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate
... characteristic of n + poly-Si/ HfTaO 共43% Ta兲/p-Si MOS capacitor with EOT of 15 Å is shown in ...shown in this figure, the measured C – V curve fits well to the simulated curve, which ... See full document
4
Low frequency noise characteristics of AlInAs/InGaAs heterojunction bipolar transistors
... relationship with the terminal voltages has not been examined in a quantitative way. It is well established that both current gain and l/f noise are affected by [r] ... See full document
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