[PDF] Top 20 A comparative study on the roles of velocity in the material removal rate during chemical mechanical polishing
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A comparative study on the roles of velocity in the material removal rate during chemical mechanical polishing
... compare the calculated NUV with within-wafer polish non- uniformity (WIWNU), polish experiments were performed on a 1 mm thick thermal oxide grown on 150 mm ...wafers. The WIWNU ... See full document
8
Modeling of the wear mechanism during chemical-mechanical polishing
... This model concerns the effects of applied pressure and relative velocity between the pad and the wafer on the removal rate during polishing and is capable of delineating the role of the[r] ... See full document
6
Effects of film stress on the chemical mechanical polishing process
... effects of film stress upon removal rate and WIWNU are ...deflection during inte- grated circuit (IC) manufacturing. In the current study, we consider only the ... See full document
8
Effect of applied potential on the chemical mechanical polishing of aluminum in phosphoric acid base slurry
... metal in addition to passive film could be abraded away during CMP. The absence of a blanket passive film on metal surface has been reported by Stein et ...20 The ... See full document
7
The removal selectivity of titanium and aluminum in chemical mechanical planarization
... to a thin, protective, barrier oxide surface layer which is stable in air and in most aqueous ...Regarding material re- moval during the metal CMP, the properties ... See full document
5
Electrochemical behavior of copper chemical mechanical polishing in KIO3 slurry
... exist in terms of developing a fea- sible copper CMP process ...module. A number of slurry chem- istries have been developed for bulk copper CMP, ...as a complexing agent, 4,5 ... See full document
6
High-selectivity damascene chemical mechanical polishing
... removal rate. Ideally, the Cu-CMP process should remove the excess Cu from barrier surfaces without losing Cu metals in ...trenches. A higher removal rate of ... See full document
4
Effects of (002) beta-Ta barrier on copper chemical mechanical polishing behavior
... is the material removal rate and k is the Preston's ...is the applied wafer pressure and U is the average linear pad-wafer ...represents the dynamic etch ... See full document
4
Re-examination of pressure and speed dependences of removal rate during chemical-mechanical polishing processes
... The normal stress acting on the abrasive particles against the samples originates from the pressure imposed by the polish arm while the shear stress arises from the slurry flow across th[r] ... See full document
3
Effect of oxidizer on the galvanic behavior of Cu/Ta coupling during chemical mechanical polishing
... 2006 The Electrochemical ...meet the requirement of global planarization, chemical me- chanical polishing 共CMP兲 has emerged as a critical technique in Cu metallization ... See full document
6
Effects of mechanical characteristics on the chemical-mechanical polishing of dielectric thin films
... ']'he effects of as-depo;ited (intrinsic) stress, externally applied (extrinsic) stresses, hardness, and modules of various dielectric films on chemica]-machanical polishing (CMP) re[r] ... See full document
6
Effects of corrosion environments on the surface finishing of copper chemical mechanical polishing
... Department of Submicron Technology Development, ERSO/ITRI, Hsinchu, Taiwan Abstract Copper chemical mechanical polishing (Cu-CMP) was investigated using slurries containing alumina abrasive ... See full document
5
Electrochemical behavior of aluminum during chemical mechanical polishing in phosphoric acid base slurry
... results of Al in the testing slurry, at a contact pressure of 5 psi and at various platen-rotating speeds, are given in Table IV and displayed in ...7 in the ... See full document
6
Effects of underlying films on the chemical-mechanical polishing for shallow trench isolation technology
... comparison of this cleaning method with the conven- tional scrubber clean, which is the main choice in most post- CMP applications [12], was also ...performed. The results are shown ... See full document
7
CHARACTERIZATION OF THE CHEMICAL-MECHANICAL POLISHING PROCESS-BASED ON NANOINDENTATION MEASUREMENT OF DIELECTRIC FILMS
... Removal rate of thermal oxide The role of the slurry particles is to add a chemical "tooth" to the polishing process, 2 a n d the bond strength between the s[r] ... See full document
7
Application of soft landing to the process control of chemical mechanical polishing
... Conclusion In this work, an analogy between the soft landing of a spacecraft and the CMP operation is ...Therefore, the CMP operation can be formulated as a minimum time ... See full document
12
A study of copper chemical mechanical polishing in urea–hydrogen peroxide slurry by electrochemical impedance spectroscopy
... composed of the Cu working electrode, the platinum counter electrode and the Ag/AgCl reference electrode with a Luggin ...probe. The downward force and the rotating speeds ... See full document
16
The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layer
... Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan Received 25 June 2002; received in revised form 12 May 2003; accepted 28 May 2003 Abstract In situ ... See full document
8
Analyses and experimental confirmation of removal performance of silicon oxide film in the chemical-mechanical polishing (CMP) process with pattern geometry of concentric groove pads
... discussion The numerical calculation flow chart is shown in Fig. 4. The force and moment equations were used to solve for the minimum slurry film thickness, spinning angle ϕ, and attack angle ... See full document
9
Robust operation of copper chemical mechanical polishing
... Conclusions In this work, the potential problem, non-monotonic oxidizer concentration effect, in Cu CMP is pointed out and verified ...ensure a robust operation. The first model adds ... See full document
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