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[PDF] Top 20 Current-mode design techniques in low-voltage 24-GHz RF CMOS receiver front-end

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Current-mode design techniques in low-voltage 24-GHz RF CMOS receiver front-end

Current-mode design techniques in low-voltage 24-GHz RF CMOS receiver front-end

... cated in 0.13-lm CMOS technology and measured. Two- stage current-mirror amplifiers cascaded are used to realize the current-mode ...of low voltage operation. The ... See full document

13

The Design of Low LO-Power 60-GHz CMOS Quadrature-Balanced Self-Switching Current-Mode Mixer

The Design of Low LO-Power 60-GHz CMOS Quadrature-Balanced Self-Switching Current-Mode Mixer

... a CMOS quadrature-balanced current-mode mixer based on a self-switching ...and RF signals with an isolation better than 37 ...proposed current-mode mixer is suit- able for the ... See full document

3

Design and anaylsis of a 2.5-Gbps optical receiver analog front-end in a 0.35-mu m digital CMOS technology

Design and anaylsis of a 2.5-Gbps optical receiver analog front-end in a 0.35-mu m digital CMOS technology

... pair in the input stage is decomposed into 4 transistors so as to function as an input buffer and an offset subtractor ...offset voltage derived from the low-pass loop filter is converted to a ... See full document

7

A 0.6-V 0.33-mW 5.5-GHz Receiver Front-End Using Resonator Coupling Technique

A 0.6-V 0.33-mW 5.5-GHz Receiver Front-End Using Resonator Coupling Technique

... a low-power and low-voltage 5.5-GHz receiver front-end circuit is designed using a resonator coupling ...a low-noise amplifier (LNA), a mixer, and the transformer ... See full document

10

A 78 similar to 102 GHz Front-End Receiver in 90 nm CMOS Technology

A 78 similar to 102 GHz Front-End Receiver in 90 nm CMOS Technology

... the CMOS W-band LNA is shown in ...gain in each stage is set at three different frequency ...width in the LNA design can cover 78–102 ...dB in post-layout ...144 GHz under ... See full document

3

An integrated 60-GHz front-end receiver with a frequency tripler using 0.13-mu m CMOS technology

An integrated 60-GHz front-end receiver with a frequency tripler using 0.13-mu m CMOS technology

... 60-GHz receiver front-end is designed and simulated using ...Cu CMOS technology with ultra thick ...metal. In order to avoid any coupling effects, the space between the T-lines ... See full document

4

A 1.2-V 5.2-mW 20-30-GHz Wideband Receiver Front-End in 0.18-mu m CMOS

A 1.2-V 5.2-mW 20-30-GHz Wideband Receiver Front-End in 0.18-mu m CMOS

... The receiver architecture under consideration is shown in ...filter. In this study, only the -path is implemented, including an LNA, a balun, and a double-balanced ...same design. The ... See full document

11

A 1.8-V 10-Gb/s fully integrated CMOS optical receiver analog front-end

A 1.8-V 10-Gb/s fully integrated CMOS optical receiver analog front-end

... photo current received by the receiver AFE is amplified to a differential voltage swing of 400 mV (pp) .... In order to avoid off-chip noise interference, the TIA and LA are dc-coupled on the ... See full document

9

A 90-dB Omega 10-Gb/s optical receiver analog front-end in a 0.18-mu m CMOS technology

A 90-dB Omega 10-Gb/s optical receiver analog front-end in a 0.18-mu m CMOS technology

... under low supply voltage, inductive peaking techniques are applied in the TIA, slicer, and buffer stage design ...are in general bulky and occupy significant chip areas [10], ... See full document

8

5.5 GHz Low Voltage and High Linearity RF CMOS Mixer Design

5.5 GHz Low Voltage and High Linearity RF CMOS Mixer Design

... Power Consumption 4.lmW corner model for MOSFET and QFN package model for bonding wires and RF/LO: 5.501/5.5GHz, LO power: 2.5 dBm pads were adopted for the full circuit simulation. 173.[r] ... See full document

4

Sub-nW 5-GHz receiver front-end circuit design

Sub-nW 5-GHz receiver front-end circuit design

... Although large LO swing improves the conversion gain, large voltage conversion gain is still available in this mixer if the output load resistance RL is chosen as large as possible. The [r] ... See full document

4

A CMOS Power-Efficient Low-Noise Current-Mode Front-End Amplifier for Neural Signal Recording

A CMOS Power-Efficient Low-Noise Current-Mode Front-End Amplifier for Neural Signal Recording

... new CMOS current-mode front-end amplifier (CMFEA) for neural signal recording is ...proposed. In the pro- posed CMFEA, both bandwidth and current gain are all tunable for ... See full document

8

A 5-GHz CMOS double-quadrature receiver front-end with single-stage quadrature generator

A 5-GHz CMOS double-quadrature receiver front-end with single-stage quadrature generator

... 5-GHz CMOS double-quadrature front-end receiver for wireless LAN application is ...proposed. In the receiver, a one-stage RLC phase shifter is used to generate quadrature ... See full document

3

CMOS 2.4-GHz receiver front end with area-efficient inductors and digitally calibrated 90 delay network

CMOS 2.4-GHz receiver front end with area-efficient inductors and digitally calibrated 90 delay network

... 2.4 GHz receiver front end with area-efficient inductors and digitally calibrated 901 delay network ...2.4 GHz CMOS Hartley image-reject receiver utilising the ... See full document

6

A 24-GHz CMOS current-mode power amplifier with high PAE and output power

A 24-GHz CMOS current-mode power amplifier with high PAE and output power

... The resultant decrease of output power is smaller than 0.5 dBm. Different process corners and power supply variations have also been simulated. Corner simulations are performed by using FF, TT, and SS device parameters. ... See full document

4

Converter-free multiple-voltage scaling techniques for low-power CMOS digital design

Converter-free multiple-voltage scaling techniques for low-power CMOS digital design

... converters. In contrast, previous works employing multiple supply voltages need level converters to prevent static currents, which may result in large power ...consumption. In addition, the CFMV ... See full document

5

Design to suppress return-back leakage current of charge pump circuit in low-voltage CMOS process

Design to suppress return-back leakage current of charge pump circuit in low-voltage CMOS process

... the design to suppress the re- turn-back leakage current in low-voltage CMOS process has been proposed and successfully verified in ...leakage current thus generated ... See full document

8

Design of mixed-voltage crystal oscillator circuit in low-voltage CMOS technology

Design of mixed-voltage crystal oscillator circuit in low-voltage CMOS technology

... a voltage gain and 180- degree phase shift, which is integrated into the chip with the XI and XO ...resistance, Rf, is used to bias the inverting amplifier around half of power supply voltage, ... See full document

4

Bond pad design with low capacitance in CMOS technology for RF applications

Bond pad design with low capacitance in CMOS technology for RF applications

... 1P8M CMOS process is used in this letter, and the typical bond pad provided by foundry is fully implemented with eight metal layers (from metal 1 to metal ...for RF applications. In order to ... See full document

3

An Integrated CMOS Front-End Receiver with a Frequency Tripler for V-Band Applications

An Integrated CMOS Front-End Receiver with a Frequency Tripler for V-Band Applications

... this design is the first CMOS receiver integrated with the SFT in the millimeter-wave ...direct-conversion receiver front-end inte- grated with the novel CMOS ... See full document

7

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