[PDF] Top 20 The Dependence of the Performance of Strained NMOSFETs on Channel Width
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The Dependence of the Performance of Strained NMOSFETs on Channel Width
... Abstract—The dependence of the performance of strained NMOSFETs on channel width was ...When the chan- nel width was varied, ... See full document
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Temperature Dependence of Electron Mobility on Strained nMOSFETs Fabricated by Strain-Gate Engineering
... engineering. The electron mobility of nMOSFETs with SPFT exhibits a 15% increase over that of coun- terpart ...techniques. The preamorphous layer (PAL) gate structure on ... See full document
3
Channel-width dependence of low-frequency noise in process tensile-strained n-channel metal-oxide-semiconductor transistors
... indispensable performance booster in producing next- generation metal-oxide-semiconductor field-effect transistors ...共i兲 Strained silicon 共SSi兲 on a relaxed SiGe buffer layer; and 共ii兲 process ... See full document
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Impacts of a buffer layer and hydrogen-annealed wafers on the performance of strained-channel nMOSFETs with SiN-capping layer
... capping the Si 3 N 4 layer. We found that the splits with Hi-wafers depict low- er ...than the splits with Cz-wafers. However, with the incorpo- ration of TEOS buffer layer, I cp ... See full document
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Influence of process flow on the characteristics of strained-Si nMOSFETs
... characteristics of strained-Si nMOSFET with the STI process are shown in ...both strained-Si nMOSFETs exhibit larger enhancement in driving cur- rent at a given degree of gate ... See full document
3
The Impact of Layout-Dependent STI Stress and Effective Width on Low-Frequency Noise and High-Frequency Performance in Nanoscale nMOSFETs
... OD width to W OD = 0.125 μm. The observed results suggest that STI stress is not the only mechanism governing the electrical property in miniaturized ...determining channel current and ... See full document
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Electrical characteristics dependence on the channel fin aspect ratio of multi-fin field effect transistors
... study, the dc and transient behavior of 16 nm gate single- and multi-fin device with respect to different fin aspect ratios have been numerically investigated for the first ...time. The ... See full document
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Narrow-Width Effect on High-Frequency Performance and RF Noise of Sub-40-nm Multifinger nMOSFETs and pMOSFETs
... than the standard multifinger device W2N32 can achieve 40%/30% lower R g and ...nMOSFET/pMOSFET. The maximum f MAX can reach 366 GHz for 35-nm nMOS and 155 GHz for 37-nm ...with the advantage ... See full document
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The impact of mobility enhanced technology on device performance and reliability for sub-90nm SOI nMOSFETs
... that the amount of compressive stress in y axis is related to the gate width and those in x axis are related to the length of ...LOD. The channel tensile stresses ... See full document
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Impacts of a polycrystalline-silicon buffer layer on the performance and reliability of strained n-channel metal-oxide-semiconductor field-effect transistors with SiN capping
... by the channel strain as well as the increased mobility, both tend to enhance the impact ioniza- tion ...splits of samples were per- formed at V DS = 4.9 V and V GS at the ... See full document
4
Ge Outdiffusion Effect on Flicker Noise in Strained-Si nMOSFETs
... over the thickness of 1 ...grown on the graded buffer layer, and a 20-nm strained-Si layer was grown on the uniform re- laxed Si Ge ...layer. The surface roughness ... See full document
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Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETs
... It is interesting to note that while the control devices with conventional SiO, sacrificial oxide depict RSCE (i.e. qh increases first before finally decreasing wit[r] ... See full document
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The effect of channel estimator memory mismatch on the performance of MLSE in wireless data communications
... ESULTS The block diagram of the simulated system is shown in ...bursts of quaternary phase shift keying (QPSK) symbols with average energy E X ...consists of training symbols followed ... See full document
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Characterization of Highly Strained nFET Device Performance and Channel Mobility with SMT
... Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsin-Chu 300, Taiwan This paper compares and analyzes the strained negative channel ... See full document
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The ballistic transport and reliability of the SOI and strained-SOI nMOSFETs with 65nm node and beyond technology
... For the reliability evaluations, SOI shows a smaller lattice such that it exhibits a much worse hot carrier (HC) reliability, while SSOI device.. shows a poorer interface quality verifie[r] ... See full document
2
The Difference of biomechanics on Walking Step Width Variability
... DIFFERENCE OF BIOMECHANICS ON WALKING STEP WIDTH VARIABILITY 1 Yu-Lin You, 2 Chien-Fen Lin, 1 Fong-Chin Su and 2 Lan-Yuen Guo 1 Department of Biomedical Engineering, College of ... See full document
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The Difference of biomechanics on Walking Step Width Variability
... The muscle activation ratio of vastus medialis oblique (VMO) and vastus lateralis (VL) was increased during narrow step width walking in normal subjects. Owings and Grabiner (2004); [r] ... See full document
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Mechanically strained strained-Si NMOSFETs
... Mechanically Strained Strained-Si NMOSFETs ...enhancement of the mechanically strained strained-Si NMOSFET device is investigated for the first ...time. The ... See full document
3
Improved hot carrier reliability in strained-channel NMOSFETS with TEOS buffer layer
... Although the physical mechanisms and characteristics of hot electron degradation have been extensively studied [3,4], there seems to be very few works investigating the impact of SiN cap[r] ... See full document
2
Effect of channel-width widening on a poly-Si thin-film transistor structure in the linear region
... in the Electrical Engineering Department, University of California, Los Angeles, working on the system design of electron cy- clotron resonance chemical vapor deposition (ECR-CVD) for ... See full document
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