[PDF] Top 20 Design and characterization of a 200 V, 45 A all-GaN HEMT-based power module
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Design and characterization of a 200 V, 45 A all-GaN HEMT-based power module
... in all-GaN-based power modules with a multiple-chip con ...The module designs include four power switches in a full-bridge ...pacity of 22 GaN ... See full document
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Evaluation of thermal performance of all-GaN power module in parallel operation
... MOSFETs, GaN HEMT devices have a positive temper- ature coef ficient in the on-resistance characteristics, which enables parallel ...9 and 10 plot the dynamic switching be- haviors during the ... See full document
7
Design, Fabrication, and Characterization of Si-Based ARROW-B Photonic Crystal Sharp-Bend Waveguides and Power Splitters
... corner and Y-junction region to increase the light bend ability and power-split ability, ...because of a large defect ...losses of 60 and 120 PC bend waveguides for both ... See full document
7
Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications
... diagram of a device illustrates possible electron trapping that mainly depletes 2DEG in the channel under high voltage off-state gate stress and causes R on ...Also of interest is the fact ... See full document
12
A Study of Circuit Design in a Smart Power Module 李宗寬、陳勝利 ; 陳勛祥
... goal of this thesis is to design a three phase BDCM driving IC and reduce system cost by using a CMOS ...advantage of CMOS process is low cost, low power dissipation ... See full document
1
The Design and Realization of a DSP-based Power Electronic Circuit Real-Time Simulator
... ESR of L 0.3Ω ESR of C ...simulate a circuit under a digital control environment, the remaining simulations are only performed by MATLAB and the proposed real-time ...comparison, ... See full document
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A V-band GaAs HEMT uniplanar monolithic integrated antenna and receiver front end
... From the integrated antenna mixer design, the LO power is fed into the circuit from a slotline.. From ,the VCO design, the output of VCO is a GCPW structure.[r] ... See full document
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Design of a Novel Pulse Capacitor Charge Power System Based on Inertial Energy Storage
... University of Science and Technology Wuhan, 430074, China Email: ...paper, a novel high-voltage generator- Homopolar Inductor Alternator (HIA) pulse-charge for the capacitor bank with repetitive ... See full document
4
Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates
... c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM) to determine the nanotribological behavior and deforma- tion characteristics ... See full document
5
Characterization of Gas Conductance of a Thermal Device With a V-Groove Cavity
... conductance of a V-groove thermal sensor is characterized by the simulation of effective collisions inside the cavity and further verified by the measurements of frequency ... See full document
1
A parametric module design framework and its application to gate-level datapath/DSP module synthesis
... In this paper we demonstrate a parameU,ic datapath module library design based on the proposed C++ module design framework that encapsulates simulation, parameter estimation, and n[r] ... See full document
4
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
... LT GaN cap layer and the photogenerated carriers will compensate trap levels in LT ...As a result, the photocurrent and responsivity will both become smaller for sample ...wavelength of ... See full document
5
Design and Simulation of a Low Power Rake Receiver for Indoor Communication
... Eltawil and Babak Daneshrad, “A Low-Power DS-CDMA RAKE Receiver Utilizing Resource Allocation Techniques”, IEEE JSSC, ...Li and Hsueh-Jyh Li, “A Novel RAKE Receiver Finger Number ... See full document
32
Design of a power-spectrum-based ATM connection admission controller for multimedia communications
... contains a power-spectrum-indexed table for managing multimedia call requests, where traffic characteristics of call re- quests are described by the power ...The power spectrum can be ... See full document
8
Enhanced Output Power of GaN-Based Resonance Cavity Light-Emitting Diodes With Optimized ITO Design
... sizes of devices made in the same ...device of aperture size 20, 25, and 30 m show similar result under 10 mA ...size of the aperture would not affect the characteristics of ITO in the ... See full document
7
A High Efficiency and Compact Size 65nm Power Management Module with 1.2V Low-Voltage PWM Controller for UWB System Application
... binding, a simple yet powerful model that can describe the behavior of most sensors and actuators and lays the foundation of our ...capable of generating a set of ... See full document
6
Design and Implementation of a Dynamic Module and Self-Maintaining Mecahnism in Wireless Sensor Network Operating System
... driver module. In the period of time, kernel might gather enough memory then resume working ...the module access NULL mem- ory-address intentionally, Recovery Manager Thread will try to update the ... See full document
6
Nanoindentation characterization of GaN epilayers on A-plane sapphire substrates
... on a-axis sapphire substrate by means of metal-organic chemical vapor deposition (MOCVD) ...The GaN epilayers has been investigated in their repetition pressure-induced impairment events from ... See full document
4
Design and Analysis of a Multicasting and Fault-Tolerant Optical Crossconnect for All-Optical Networks
... effect of wavelength converters on the signal quality bas been investigated by adding converters to the ...easier and reduce the blocking probability because of their signal regeneration and ... See full document
16
The Design of Control System and Power Conditioning System for a 25-kW Active-Control Based Wind Turbine System
... kinds of blade performances in this ground test ...the design and test of the MPPT algorithm of power conditioning system under different wind speed ...system of the test ... See full document
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