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[PDF] Top 20 Effect of deposition temperature, on thermal stability in high-density plasma chemical vapor deposition fluorine-doped silicon dioxide

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Effect of deposition temperature, on thermal stability in high-density plasma chemical vapor deposition fluorine-doped silicon dioxide

Effect of deposition temperature, on thermal stability in high-density plasma chemical vapor deposition fluorine-doped silicon dioxide

... The thermal stability of SiOF films with varying deposi- tion temperature is also confirmed using actual Al intercon- nect test ...The effect of the deposition ... See full document

7

Effect of fluorine flow and deposition temperature on physical characteristics and stability of fluorine-doped siloxane-based low-dielectric-constant material

Effect of fluorine flow and deposition temperature on physical characteristics and stability of fluorine-doped siloxane-based low-dielectric-constant material

... effects of SiF 4 flow rate and deposition temperature on the physical properties and stability of fluorine-doped organo-silica-glass 共OFSG兲 films were ...porosity ... See full document

7

Effect of adding Ar on the thermal stability of chemical vapor deposited fluorinated silicon oxide using an indirect fluorinating precursor

Effect of adding Ar on the thermal stability of chemical vapor deposited fluorinated silicon oxide using an indirect fluorinating precursor

... forming in F x SiO y film while adding CF 4 : ~1! the homogeneous reaction in the plasma; the active F and O atoms react with SiH 4 , thereby causing the formation of oxyfluoride species and ... See full document

4

Characterization and thermal stability of fluorosilicate glass films deposited by high density plasma chemical vapor deposition with different bias power

Characterization and thermal stability of fluorosilicate glass films deposited by high density plasma chemical vapor deposition with different bias power

... variation of fluorine concentration in the FSG films before and after annealing as a function of bias power during ...total fluorine concentration of the as-deposited films ... See full document

5

Influence of RF bias on hydrogenated amorphous silicon by high-density plasma chemical vapor deposition

Influence of RF bias on hydrogenated amorphous silicon by high-density plasma chemical vapor deposition

... amorphous silicon 共a-Si:H兲 thin films have been widely used in thin-film transistors 共TFTs兲, solar cells, and optoelec- tronic ...and stability of a-Si:H vary with deposition methods ... See full document

5

Influences of deposition temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating precursor

Influences of deposition temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating precursor

... formation of F x SiO y species and deposition and ~2! hetero- geneous reaction on film surface; the active fluorine is ab- sorbed ~physical and chemical! on the deposited film ... See full document

4

Fabrication of autocloned photonic crystals by using high-density-plasma chemical vapor deposition

Fabrication of autocloned photonic crystals by using high-density-plasma chemical vapor deposition

... a high-density-plasma chemical vapor deposition (HDP-CVD) method with inductively coupled plasma (ICP)-sourced was used as an alternative to the rf- bias sputtering method ... See full document

4

In situ fluorine-modified organosilicate glass prepared by plasma enhanced chemical vapor deposition

In situ fluorine-modified organosilicate glass prepared by plasma enhanced chemical vapor deposition

... performance of decreasing device sizes. Never- theless, despite the prevalence of copper interconnects in to- day’s advanced semiconductor devices, the implementation of lower-k materials has ... See full document

6

Effect of deposition temperature and oxygen flow rate on properties of low dielectric constant SiCOH film prepared by plasma enhanced chemical vapor deposition using diethoxymethylsilane

Effect of deposition temperature and oxygen flow rate on properties of low dielectric constant SiCOH film prepared by plasma enhanced chemical vapor deposition using diethoxymethylsilane

... increase of the oxygen flow rate in the deposition process induces the increase in reactivity of DEMS, and a higher proportion of plasma-generated species having ... See full document

6

Bias effect on the growth of carbon nanotips using microwave plasma chemical vapor deposition

Bias effect on the growth of carbon nanotips using microwave plasma chemical vapor deposition

... collision of carbon species in the growth ...energy. In this situ- ation, the competition between etching and deposition is re- ...rate of deposition to exceed the rate of ... See full document

4

Alkylation of nanoporous silica thin films by high density plasma chemical vapor deposition of a-SIC : H

Alkylation of nanoporous silica thin films by high density plasma chemical vapor deposition of a-SIC : H

... intensity of C 2 H 5 ions is more than one order higher than that of ...groups in the nanoporous silica layer have an alkane struc- ture higher than methyl ...full of pores of ⬃4 nm ... See full document

9

Chemical vapor deposition of diamond on silicon substrates coated with adamantane in glycol chemical solutions

Chemical vapor deposition of diamond on silicon substrates coated with adamantane in glycol chemical solutions

... coating of adamantane on Si, adamantane evaporation on dip-coated substrates was found to be significantly reduced in air and MPCVD ...nucleation on the substrate after MPCVD can be ... See full document

5

Preparation of high yield multi-walled carbon nanotubes by microwave plasma chemical vapor deposition at low temperature

Preparation of high yield multi-walled carbon nanotubes by microwave plasma chemical vapor deposition at low temperature

... wall of a CNT indicating defective graphite sheets on the wall surface, vertically multi-walled with hollow ...spectra of multi-walled carbon ...low temperature be- low 330 ◦ C by microwave ... See full document

7

Rapid thermal chemical vapor deposition of in-situ nitrogen-doped polysilicon for dual gate CMOS

Rapid thermal chemical vapor deposition of in-situ nitrogen-doped polysilicon for dual gate CMOS

... We have demonstrated that in-situ nitrogen-doped RTCVD polysilicon film is highly effective in suppressing boron penetration, leading to smaller flatband voltage shi[r] ... See full document

2

Effect of catalyst on growth behavior of carbon nanotube synthesizing by microwave heating thermal chemical vapor deposition process

Effect of catalyst on growth behavior of carbon nanotube synthesizing by microwave heating thermal chemical vapor deposition process

... CNTs in the microwave heating thermal CVD 共MHT-CVD兲 process is not very much differ- ent from that of the conventional CVD ...shown in Fig. 1 共a兲, most of the CNTs, about 300 nm ... See full document

5

Effects of TaN substrate pretreatment by Ar plasma on copper chemical vapor deposition

Effects of TaN substrate pretreatment by Ar plasma on copper chemical vapor deposition

... because of its low bulk resistivity ...and high resistance to stress-induced ...film deposition, such as chemical vapor deposition 共CVD兲, 5,6 conventional as well as ionized ... See full document

7

The Synthesis of Carbon Nanotubes on Silicon Nanowires by Thermal Chemical Vapor Deposition 李世凱、李世鴻

The Synthesis of Carbon Nanotubes on Silicon Nanowires by Thermal Chemical Vapor Deposition 李世凱、李世鴻

... properties of CNTs, whereas field-emission characteristics of CNTs were measured in high ...size of nickel balls formed in the nucleation period gets ...number of CNTs ... See full document

4

Ultra-high-density InGaN quantum dots grown by metalorganic chemical vapor deposition

Ultra-high-density InGaN quantum dots grown by metalorganic chemical vapor deposition

... amounts of InGaN deposited in the samples QD-F, QD-G and QD-H, are 10, 20 and 30 MLs, respectively, at a fixed gas flow rate, growth temperature and SiN x treatment duration of 420 ...MLs ... See full document

4

Effect of nitrogen and hydrogen on the growth of multiwall carbon nanotubes on flexible carbon cloth using thermal chemical vapor deposition

Effect of nitrogen and hydrogen on the growth of multiwall carbon nanotubes on flexible carbon cloth using thermal chemical vapor deposition

... t In this study, the effect of various mixture fluxes of nitrogen (N 2 ) and hydrogen (H 2 ) on carbon nanotube (CNT) synthesis grown on flexible carbon cloth using thermal ... See full document

3

Deposition properties of selective tungsten chemical vapor deposition

Deposition properties of selective tungsten chemical vapor deposition

... This work investigates the basic deposition properties of selective tungsten chemical vapor deposition (W-CVD) using the process of silane reduction of WF6 with the SiH4/WF 6 flow[r] ... See full document

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