[PDF] Top 20 Effect of grain orientations of Cu seed layers on the growth of < 111 >-oriented nanotwinned Cu
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Effect of grain orientations of Cu seed layers on the growth of < 111 >-oriented nanotwinned Cu
... Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, 30010 Taiwan ...investigate the growth of Cu films on two different Cu ... See full document
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Grain growth in electroplated (111)-oriented nanotwinned Cu
... For the nt-Cu films before annealing, there were many fine grains at the bottom of the ...after the annealing, it is very clear that the large nanotwinned grains A, B ... See full document
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Microstructure control of unidirectional growth of eta-Cu6Sn5 in microbumps on < 1 1 1 > oriented and nanotwinned Cu
... time of 5 min. The results are shown in Fig. 6b. Most of the inter- metallics were merged ...together. The orientations of these intermetallics were still close to h0 0 0 ... See full document
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Fabrication and Characterization of (111)-Oriented and Nanotwinned Cu by Dc Electrodeposition
... when the current density was larger than 120 mA cm −2 , the columnar structure cannot be fabricated, as presented in Figure ...in the Cu deposition rate as the current density ...that ... See full document
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Unidirectional Growth of Microbumps on (111)-Oriented and Nanotwinned Copper
... orders of magnitude, yet the solder volume will be reduced by 6 orders of magni- ...However, the melting point of the solder remains unchanged, meaning that each micro- bump may ... See full document
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Investigation of the Galvanic Effect between RuN Barriers and Cu Seed Layers
... Conclusions The purpose of this study is to investigate the galvanic effect between the Cu metals and RuN x ...films. The N content of RuN x films influenced not only ... See full document
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Correlation between the Microstructures of Bonding Interfaces and the Shear Strength of Cu-to-Cu Joints Using (111)-Oriented and Nanotwinned Cu
... between the Cu pillar bumps and the Cu films was achieved at a temperature gradient ranging from 200 ◦ C/100 ◦ C to 350 ◦ C/100 ◦ C in N 2 ...presents the cross-sectional FIB and EBSD ... See full document
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Low-temperature direct copper-to-copper bonding enabled by creep on (111) surfaces of nanotwinned Cu
... bond the electroplated Cu films, the samples were cut into 3 × 3 mm 2 ...Then, the pieces were cleaned ultrasonically in acetone for 5 min, dried with a N 2 purge, cleaned with a mixed ... See full document
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Effect of Silver on the Sintering and Grain-Growth Behavior of Barium Titanate
... observed on the silver- containing specimens. The vapor pressure of silver is high at temperatures above its melting point, 4 which resulted in a thin, silver-depletion surface layer after ... See full document
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Effect of NiO addition on the sintering and grain growth behaviour of BaTiO3
... density of sintered specimens is also shown in Fig. 3. The relative density of the undoped BaTiO 3 is higher than ...added, the rela- tive density is decreased with the increase ... See full document
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Formation of nearly void-free Cu3Sn intermetallic joints using nanotwinned Cu metallization
... stack of different chips that performs vertical integration in a 3D ...made of copper-tin are typically used as joints between chips because copper-tin is better than copper- nickel in terms of ... See full document
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The effect of oxygen on the interfacial reactions of Cu/TaNx/Si multilayers
... No Cu edge at 931 eV can be observed in the ...that the interlayer at the Cu/TaN x in- terface is the amorphous TaO x N y ...result of the surface oxidation ... See full document
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Growth selectivity of hexagonal-boron nitride layers on Ni with various crystal orientations
... selectivity of hexagonal-boron nitride layers on Ni with various crystal orientations{ Yi-Hsien Lee,* a Keng-Ku Liu, a Ang-Yu Lu, a Chih-Yu Wu, a Cheng-Te Lin, a Wenjing Zhang, a Ching-Yuan ... See full document
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Effects of oxidized Cu and Co layers on the formation of Au ohmic contacts to p-GaN
... in the application of optoelec- tronic devices such as light-emitting diodes, laser diodes, UV detec- tors, microwave power devices such as thyristors, and metal-oxide- semiconductor-field-effect ... See full document
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Inhibiting the consumption of Cu during multiple reflows of Pb-free solder on Cu
... form Cu–Sn intermetal- lic compounds (IMC) at room temperature after solidi- fication ...Because of the high wetting rate, SnPb as well as Sn-based Pb-free solders have been widely used in electronic ... See full document
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Effect of oxidizer on the galvanic behavior of Cu/Ta coupling during chemical mechanical polishing
... 2006 The Electrochemical ...meet the requirement of global planarization, chemical me- chanical polishing 共CMP兲 has emerged as a critical technique in Cu metallization ...Although Cu ... See full document
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The effect of oxygen in the annealing ambient on interfacial reactions of Cu/Ta/Si multilayers
... realize the effect of Cu diffusion with interfacial behavior of Ta rSi interface on thermal stability, a two-step annealing treatment was carried ...out. The treatment ... See full document
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Thermal decomposition mechanisms of tungsten nitride CVD precursors on Cu(111)
... observed. The desorption of m/z = 58 species is similar to that of diethylamine and is hence ...omitted. The species with m/z = 71 has desorption features differ- ent from those of m/z = ... See full document
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Curing of polyimide and the effect of the TEOS SiO2 barrier layer on the electromigration of sputtered Cu with polyimide passivation
... type of long-chain macromol- ecule with a repeating monomer and a feature of cross-link between monomer chains, which provides high ...one of the most at- tractive interlayer dielectrics ... See full document
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Effect of fulvic acid on the sorption of Cu and Pb onto γ-Al2O3
... Institute of Environmental Engineering, Nation Taiwan University, Taipei 106, Taiwan, ROC Received 19 October 2001; received in revised form 26 June 2002; accepted 2 August 2002 Abstract This work investigated ... See full document
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