[PDF] Top 20 Effect of moisture on electrical properties and reliability of low dielectric constant materials
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Effect of moisture on electrical properties and reliability of low dielectric constant materials
... Results and discussion Fig. 2(a) presents the FT-IR absorption spectra of porous low-k dielectrics before and after moisture ...after moisture treatment, and the intensity ... See full document
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Effect of UV curing time on physical and electrical properties and reliability of low dielectric constant materials
... formation of the Si-O network and the extraction of Si-CH 3 bonds, increasing the dielectric ...with low-k materials with various UV curing ...made. Low-k materials ... See full document
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Effect of NH3/N-2 ratio in plasma treatment on porous low dielectric constant SiCOH materials
... Department of Electrical Engineering, National Chi-Nan University, Nan-Tou, Taiwan, 54561, Republic of China (Received 6 December 2013; accepted 3 March 2014; published 20 March 2014) This study ... See full document
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Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material
... performance and reliability over its lifetime, the electrical properties (dielectric constant, breakdown voltage and leakage current ) of interlayeryintermetal ... See full document
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Impact of plasma treatment on structure and electrical properties of porous low dielectric constant SiCOH material
... Low dielectric constant (low-k) porous films are needed for advanced technologies to improve signal propaga- ...integration of porous low-k films faces more severe challenges due ... See full document
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Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition
... dependence of deposition rate of the low-k films with different carrier gases can be observed in ...a low-pressure region (b400 Pa), the reaction rate is relatively slow, due to insufficient ... See full document
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Dielectric and barrier properties of spin-on organic aromatic low dielectric constant polymers FLARE and SiLK
... promise of 30% faster devices with fewer metal levels and a lower cost of produc- tion, attaining high device yields on chips with Cu interconnects remains the greatest challenge, making ... See full document
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Effect of deposition temperature and oxygen flow rate on properties of low dielectric constant SiCOH film prepared by plasma enhanced chemical vapor deposition using diethoxymethylsilane
... mechanical, and electrical properties of SiCOH films using diethox- ymethylsiliane (DEMS) and oxygen (O 2 ) as a precursor by PECVD method have been ...index of SiCOH increases ... See full document
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Effect of bottom electrode materials on the electrical and reliability characteristics of (Ba, Sr)TiO3 capacitors
... The dielectric constant and leakage current of the films were also strongly dependent on the postannealing ...deposited on Ir bottom electrode at 500 C, after 700 C annealing ... See full document
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Electrical reliability issues of integrating thin Ta and TaN barriers with Cu and low-K dielectric
... R and capacitance, C) have come to play a dominant role in determining not only the total signal delay but also the packing density, reliability, and manufacturing cost of integrated circuits ... See full document
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Physical and electrical characteristics of F- and C-doped low dielectric constant chemical vapor deposited oxides
... indicative of porous or less dense materials like FSG and ...density of nanometer-sized pores, with radii of only about 4-12 Å and total volume fraction of pores around ... See full document
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Physical and electrical characteristics of methylsilane- and trimethylsilane-doped low dielectric constant chemical vapor deposited oxides
... dimension of the device in integrated circuits 共ICs兲 scales down below 0.18 m, on-chip interconnects become a domi- nant factor in determining the overall IC chip performance, packing density, ... See full document
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Effect of thermal treatment on physical, electrical properties and reliability of porogen-containing and porogen-free ultralow-k dielectrics
... measured dielectric constant, pore size, and po- rosity of various low-k dielectrics at annealing temperatures of 400 °C and 600 ...porosity of the low-k film ... See full document
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Effect of fluorine flow and deposition temperature on physical characteristics and stability of fluorine-doped siloxane-based low-dielectric-constant material
... effects of SiF 4 flow rate and deposition temperature on the physical properties and stability of fluorine-doped organo-silica-glass 共OFSG兲 films were ...porosity of the ... See full document
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Synthesis and characterization of fluorinated polybenzoxazine material with low dielectric constant
... Keywords: Dielectric constant; Fluorination; Benzoxazine 1. Introduction Low dielectric constant materials ðK , 3 :0Þ have the advantage of facilitating manufacture ... See full document
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Heat, moisture and chemical resistance on low dielectric constant (low-k) film using diethoxymethylsilane (DEMS) prepared by plasma enhanced chemical vapor deposition
... 2.2. Reliability test To determine the thermal stability, the films were annealed for 1 h in a nitrogen ambient at temperatures ranging from 400 to 800 ...humidity, and 2 atmosphere pressure for 168 h. To ... See full document
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Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
... studies on high dielectric constant 共high- 兲 oxides as a possible replacement for con- ventional silicon oxide in complementary metal-oxide- semiconductor 共CMOS兲 devices which require an equivalent ... See full document
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Effect of direct-current biasing on the dielectric properties of barium strontium titanate
... is of great interest for many practical ...done on the temperature-dependent dielectric properties of ...effects of various dopants on the dielectric ... See full document
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Metal drift induced electrical instability of porous low dielectric constant film
... implementation of copper-interconnect structures with low-k materials is the only solution to reduce overall signal delay in several technology nodes in the ...electric constant ... See full document
6
A low-temperature specific heat study of giant dielectric constant materials
... high-K materials such as La 0 ..., and two distinct batches of CCTO with different oxygen pressure and baking temperatures, with only few per cent changes in the fitting ...the low- ... See full document
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