[PDF] Top 20 The effect of thermal annealing on the optical and electrical properties of ZnO epitaxial films grown on n-GaAs (001)

... spaced ZnO {101 1} diffraction peaks conrm that the ZnO lm has 6-fold rotational symmetry against surface normal and is epitaxially grown on GaAs ...(001). The ... See full document

... The increased PL integrated intensity, with only few meV shifts of PL peak energy, indicates that the thermal annealing effect can reduce the deep-level related n[r] ... See full document

... also the effect of post-growth annealing on the optical characteristics of the ZnO ...After annealing at 800  C for 100 min in an O 2 ... See full document

... discussed the effects of annealing time on the structural and optical properties of sputtered ZnO ...treatment, the annealed ZnO films ... See full document

... , and DH ZnO = 2350.5 kJ mol 21 ). 11,12 This implies the formation of an amorphous silica layer at the Y 2 O 3 –Si interface can be obstructed and provides a nice template for ... See full document

... Conclusion The PLD deposited ZnO thin films formed at the constant partial pressure of a N 2 O atmosphere at various substrate temperatures revealed different ferromagnetic ... See full document

... pattern of ZnO:Al films on r-plane sapphire is shown in ...only the peaks of sapphire r-plane and ZnO:Al a-plane can be seen at ... and 56.68  without ... See full document

... characteristics of the ZnO epitaxial films grown on c-plane sapphire by the atomic layer deposition method were thoroughly ...studied. The in-plane axes ... See full document

... High-quality epitaxial films can be achieved by metal organic chemical vapor deposition methods with different controlled surface ...one of the attractive techniques for obtaining such films, 12,13) ... See full document

... Results and discussion Figure 1a and b shows the SEM micrographs of ZnO:Al thin films prepared at working pressure of ...2.5 and 20.0 mTorr. It can be seen that ... See full document

... where the exciton 2 emission is located approximately 2.70 eV at 30 K, the exciton peak of the annealed film red shifts approxi- mately 12 meV as shown in the inset of ...out ... See full document

... eV, and a large binding energy, 60 meV, for excitons, ZnO has gained im- portance for possible applications of these properties, 1 but the small concentration and mobility ... See full document

... in the resulting GZO films were estimated to be around 0.5, 2.9, and 8%, for 50, 100, and 200 W rf power levels, respec- tively: The results above were obtained using X-ray ... See full document

... its optical, electrical, and mechanical ...Experimental and theoretical studies on ZnO crystals have revealed the presence of a giant permanent dipole moment, which ... See full document

... GZO the Ga 2 O 3 contents are approximately 3 wt%) films having different ZnO buffer layers were deposited using radio frequency (rf) magnetron ...sputtering. The use of a grey-based ... See full document

... investigated the ZnO thin film on the N/P type silicon substrates by the RF magnetron sputtering ...study the opotical and electrical properties by ... See full document

... examined the interfacial characteristics and MOS properties of ALD-Al 2 O 3 dielectric films deposited on sulfidized GaAs ...substrates. The sulfida- tion ... See full document

... between the AFM and the SCM images is ...exclude the correlation is due to topographic effect on the capacitance signals since the root-mean-square surface ... See full document

... amounts of silver particles, 0.08–7.7 mol%, are mixed with zinc oxide powder and subsequently co-fired at 800–1200 ◦ ...C. The effects of Ag addition on the microstructural ... See full document

... combination of XRD, AFM and nanoindentation techniques has been carried out to investigate the structural, surface morphological features, and nanomechanical properties of GZO ... See full document