[PDF] Top 20 Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures

... discussed the electrical properties of Al 2 O 3 /InSb MOSCAPs and their dependent on PDA ...temperature. The low-frequency asymmetrical C–V ... See full document

... shows the bidirectional C–V curves of samples at a frequency of 100 ...kHz. The values of C–V hysteresis near the flatband of samples are shown in the Table ...from ... See full document

... Capacitance–voltage and memory window characteristics Some research in literature focused on the FGA degra- dation of a MFM structure with different top electrodes and found that H ... See full document

... Unfortunately, the progress of 1T FeMOSFET memory is obstructed by the interface reaction between ferroelectric materials and Si that greatly degrades the device characteristics ... See full document

... because of the lower writing voltage and faster switching speed than those of Flash ...improve the cell size and device performance, one transistor 共1T兲 ferroelectric ... See full document

... 2006 The Electrochemical ...2006. The rapid advancement of complementary metal oxide semicon- ductor 共MOS兲 integrated circuit technologies during the past few decades has forced the ... See full document

... that the dielectric constant of BST thin films annealed at different temperatures varies with annealing ...time. The dielectric constant of BST annealed at 550°C in N 2 or ... See full document

... 2003 The Electrochemical ...December 2, 2002; revised manuscript received March 12, ...with the existing one-transistor 共1T兲 one-capacitor or 1T two-capacitor ferroelectric memory technology, ... See full document

... capacitor, and interconnect formation. Wet etching with H 3 PO 4 -H 2 O 2 -H 2 O solution was used for device isolation and epitaxial resistor ...formation. ... See full document

... HfO 2 , HfON, and HfSiON, are the uppermost candidates for application among all of the potential high-k ...Si and SiGe metal oxide semiconductor field-effect transistors ... See full document

... terms and conditions apply. Band Alignment Parameters of Al2O3/InSb Metal–Oxide–Semiconductor Structure and Their Modification with Oxide Deposition ... See full document

... PbTiO 3 thin films have been prepared on Si substrates with ultra-thin SiO 2 and Al 2 O 3 buffer layers by chemical solution deposition, ...capacitance–voltage ... See full document

... Abstract The scaling limit for VLSI gate oxide (SiO) is 15}20 As that is determined by the large direct-tunneling leakage ...studied the AlO to use as an alternative gate ...quality, ... See full document

... Figure 2 shows the multi-frequency C–V characteristics of the samples PDA-400-N 2 and PDA-400-FG ...good electrical characteristics of distinct ... See full document

... In the present study, an alumina wheel and a diamond wheel were used to grind NiAl and Al 2 O 3 /NiAl ...composites. The surface quality, strength and ... See full document

... analyze the SILC effect, we have plotted the current change (J stressed -J 0 )/J 0 as a function of bias voltage in ...than the J stressed -V plot shown in Fig. 4. For the ... See full document

... Institute of Environmental Engineering, Nation Taiwan University, Taipei 106, Taiwan, ROC Received 19 October 2001; received in revised form 26 June 2002; accepted 2 August 2002 Abstract This work ... See full document

... on the Al 2 O 3 /Si substrate at 4000 rpm for 30 s and then dried on a hot plate at a tempera- ture of about 350 ...obtain the desired film thickness about 340 nm. ... See full document

... In view of this anomalous resistivity jump, observed only in semiconducting ce- ramics, and being strongly influenced by the acceptor states in the scheme of the[r] ... See full document

... published 2 July 2007兲 The authors reported the synthesis of indium oxide nanocrystal chains on silicon substrates using gold nanoparticles as catalyst on native silicon ...In 2 ... See full document