[PDF] Top 20 High temperature formed SiGeP-MOSFET's with good device characteristics
Has 10000 "High temperature formed SiGeP-MOSFET's with good device characteristics" found on our website. Below are the top 20 most common "High temperature formed SiGeP-MOSFET's with good device characteristics".
High temperature formed SiGeP-MOSFET's with good device characteristics
... Abstract—We have used a simple process to fabricate Si 0 3 Ge 0 7 /Si p-MOSFET’s. The Si 0 3 Ge 0 7 is formed using deposited Ge followed by 950 C rapid thermal annealing and solid phase epitaxy that ... See full document
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Improvement of TDDB reliability, characteristics of HfO2 high-k/metal gate MOSFET device with oxygen post deposition annealing
... was formed by atomic layer deposition method sequen- ...electrical characteristics on PDA, two spilt HfO 2 transistors were fabricated with and without the oxygen PDA after HfO 2 ...60 s in O ... See full document
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Low voltage lead titanate/Si one-transistor ferroelectric memory with good device characteristics
... inevitable high anneal temperature of ...the good di- electric and diffusion barrier, 10,11 we have achieved the record large ferroelectric memory window of 13 V in this kind of stack gate ...low ... See full document
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La2O3/Si0.3Ge0.7 p-MOSFETs with high hole mobility and good device characteristics
... comparable with published data in nitrided HfO 2 /Si ...compared with La 2 O 3 /Si control devices. The high mobility in Si 0 3 Ge 0 7 p-MOSFET gives another step for integrating high- ... See full document
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Investigation on device characteristics of MOSFET transistor placed under bond pad for high-pin-count SOC applications
... a good choice. To ensure that this choice is practicable, a test chip with large size NMOS devices placed under bond pads had been fabricated in a ...drawn with different layout patterns on the ... See full document
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High-quality thermal oxide grown on high-temperature-formed SiGe
... 1963 S0013-4651(99)10-038-7 CCC: ...consistent with the sharp and strong XRD peak that indicates the formed SiGe has good crystalline ...the device interface and transport property due ... See full document
3
Gate oxide integrity of thermal oxide grown on high temperature formed Si0.3Ge0.7
... After device isolation, 120 Å amorphous Ge layer is deposited on active ...Ge with good crys- talline quality was then formed by RTA at 900 C as measured by cross-sectional TEM and X-ray ... See full document
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Effect of formal passivations on temperature-dependent characteristics of high electron mobility transistors
... the temperature is increased from 300 to 480 K. The corresponding temperature coefficients, ...in device performance. 7 The higher ⌽ B of device A indicates that the lower interface traps at ... See full document
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Temperature-dependent capacitance characteristics of RF LDMOS transistors with different layout structures
... the device capacitances influence the input, output, and feedback capacitances, which are important in the dynamic operation, and have large impact on device high-frequency performance, the ... See full document
4
High-temperature threshold characteristics of a symmetrically graded InAlAs/InxGa1-xAs/GaAs metamorphic high electron mobility transistor
... current-voltage characteristics of the studied device at different temperatures ranging from 300 to 500 ...The device demonstrates good pinch-off characteristics and superior output ... See full document
3
High Performance Metal-Gate/High-kappa GaN MOSFET With Good Reliability for Both Logic and Power Applications
... GaN MOSFET on a Si substrate is demonstrated to achieve a record highest normalized transistor current (μC ox ) of 335 μA/V 2 (410 mA/mm at L G = 5 μm and only V G = 4 V), I ON /I OFF of 9 orders of magnitude, ... See full document
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The impact of high-frequency characteristics induced by intrinsic parameter fluctuations in nano-MOSFET device and circuit
... The WKF is therefore bringing less impact on the gate capaci- tance fluctuation because the inversion charge responds to the change in capacitor voltage (i.e., the WKF is now screened by the inversion layer). Similarly, ... See full document
5
Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode
... much larger than that for the PtSi/n-Si contact and in- creases faster with increasing reverse bias voltage, showing the poor rectifying property of the DySi 2x /p-Si contact. The transistor properties for the ... See full document
6
Characteristics of size dependent conductivity of the CNT-interconnects formed by low temperature process
... CNT-interconnects with such characteristics into power ...CNT-interconnect formed by the amount of 10 mL CNT ...CNT-interconnects with the increasing CNT densities came close to ... See full document
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Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention
... retention characteristics at 85 ° C. Under ⫾16 V and 100 s P /E, the As + -implanted ZrON devices have a larger initial memory window of ...control device without As + implanta- tion, suggesting ... See full document
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The Impact of MOSFET Layout Dependent Stress on High Frequency Characteristics and Flicker Noise
... Abstract —Layout dependent stress in 90 nm MOSFET and its impact on high frequency performance and flicker noise has been investigated. Donut MOSFETs were created to eliminate the transverse stress from ... See full document
4
Thickness dependent gate oxide quality of thin thermal oxide grown on high temperature formed SiGe
... on high temperature formed Si 0 3 Ge 0 7 , the gate oxide quality is strongly dependent on oxide thickness and improves as thickness reduces from 50 to 30 ...charge-to-breakdown with ... See full document
3
An efficient method for characterizing time-evolutional interface state and its correlation with the device degradation in LDD n-MOSFET's
... In this new method, by combining the power law as a function of stress time and the charge pumping measurement data, we can directly calculate the time-dependent [r] ... See full document
6
A novel method for extracting the metallurgical channel length of MOSFET's using a single device
... MOSFET's with very high accuracy (0.01 pm resolution) [9]. In this paper, a novel charge-pumping method using only one MOSFET device is proposed to determine the metallurgi[r] ... See full document
3
High-temperature ratchets with sawtooth potentials
... ratchets with a sawtooth potential of arbitrary asymmetry, based on the technique developed in ...ratchets with sharp potentials and the continuous analytical description, in terms of self-similar ... See full document
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