[PDF] Top 20 The Impact of MOSFET Layout Dependent Stress on High Frequency Characteristics and Flicker Noise

... —Layout dependent stress in 90 nm MOSFET and its impact on high frequency performance and flicker noise has been ...eliminate the ... See full document

... Abstract—The impact of MOSFET layout-dependent stress on high-frequency performance and flicker noise has been investi- ...gated. ... See full document

... μm. The observed results suggest that STI stress is not the only mechanism governing the electrical property in miniaturized ...STI stress effect in determining channel current ... See full document

... Chen, and Guo-Wei Huang, Member, IEEE Abstract—The temperature dependence of high-frequency noise characteristics for deep-submicrometer bulk and silicon-on- ... See full document

... (LDMOS), layout structure, nonuniform doping, ...reliability, and power capability, laterally diffused MOS (LDMOS) transistor technology has played a predominant role in the power amplifier ... See full document

... Narrow-OD MOSFET W05N128 with four times smaller W F /larger N F than the standard multifinger device W2N32 can achieve 40%/30% lower R g and ...nMOSFET/pMOSFET. The maximum f MAX can reach ... See full document

... to the square of the transconductance ( ...weakly dependent on the gate voltage when [6]. The measured transconduc- tance is used in the NS ...oxide, the ... See full document

... less impact on the gate capaci- tance fluctuation because the inversion charge responds to the change in capacitor voltage ...(i.e., the WKF is now screened by the ... See full document

... from the National Chiao Tung University Hsinchu, Taiwan, in 2003 and 2007, ...with the Advanced Technology Development Division, United Micro- electronics Corporation, Hsinchu, working on ... See full document

... investigates the low-frequency noise char- acteristics and reports a new mechanism for uniaxial strained ...comparison of the input-referred noise and the ... See full document

... to the understanding of the dynamics and the struc- ture of the plumes by taking into account real ...number of numerical models have applied to investigate ... See full document

... current and photocurrent of our ZnO MSM photoconductive sensor were ...−5 and 1.21 ⫻ 10 −4 A, respectively. Figure 2 shows spectral responses of the fabricated ZnO photoconductive ... See full document

... First, the ranking results consist of mostly American and some European ...companies. The results lack signi ficant representation from other parts of the world, for example Asia ... See full document

... values of devices A and B are decreased from ...0.937 and 0.839 eV 共1.15 and 1.37 兲, respectively, as the temperature is increased from 300 to 480 ...K. The corresponding ... See full document

... Materials and methods ...employees of a screw-manufacturing plant in Taichung County at the end of ...lifestyle and health examination results, was required to establish the ... See full document

... relationship with the terminal voltages has not been examined in a quantitative way. It is well established that both current gain and l/f noise are affected by [r] ... See full document

... Abstract—For the first time, the temperature dependences of radio frequency (RF) metal oxide semiconductor field effect tran- sistors’ intrinsic noise currents, including the ... See full document

... doctoral and postdoctoral research in SOI devices at the Univer- sity of California at ...one of the major contributors to the unified BSIMSOI model, the first industrial ... See full document

... Quadtree and pyramid architectures have attracted considerable attention in recent ...applied, on an increasing basis, to the fields of digital image and signal ...embedding of ... See full document

... was the Department Manager with the Com- puter and Communication Research Laboratories, VLSI Design Division, Industrial Technology Re- search Institute (ITRI), ...with the Institute of ... See full document