[PDF] Top 20 InAs/In(1-x)Ga(x)As Composite Channel High Electron Mobility Transistors for High Speed Applications
Has 10000 "InAs/In(1-x)Ga(x)As Composite Channel High Electron Mobility Transistors for High Speed Applications" found on our website. Below are the top 20 most common "InAs/In(1-x)Ga(x)As Composite Channel High Electron Mobility Transistors for High Speed Applications".
InAs/In(1-x)Ga(x)As Composite Channel High Electron Mobility Transistors for High Speed Applications
... Abstract—80-nm InAs channel HEMTs with different lattice matched sub-channels, In ...0.53 Ga 0.47 As and In 0.7 Ga 0.3 As, have been ...with InAs/ In ... See full document
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InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications
... October 1, 2008; accepted November 18, 2008; published online April 20, 2009 An InAs-channel high-electron-mobility transistor (HEMT) with an 80 nm gate length for ... See full document
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InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
... nm InAs channel HEMT with a thin channel and InAlAs barrier layer was fabricated ...the channel and InAlAs barrier layer were reduced to 5 ...preferable for reducing the resistance ... See full document
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Growth of very-high-mobility AlGaSb/InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications
... AlGaSb/ InAs high-electron-mobility transistor 共HEMT兲 epitaxial structure on the Si substrate is ...AlGaSb/ InAs HEMT structure and the Si ...by x-ray diffraction, transmission ... See full document
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Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
... measurements For linearity characterization, both two-tone and digitally modulated WCDMA signals were used as excitation for third-order intermodulation distortion (IMD3) and adjacent channel ... See full document
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InAs high electron mobility transistors with buried gate for ultralow-power-consumption low-noise amplifier application
... mainly in the degradation of performance caused by the short channel ...taken in obtaining the optimum physical parameters of devices for such ... See full document
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Investigation of impact ionization in InAs-channel HEMT ford high-speed and low-power applications
... InP high electron mobility transistor (HEMT) with InAs channel and InGaAs subchannels has been ...The high current gain cutoff frequency (f t ) of 310 GHz and the maximum ... See full document
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Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors
... InGaAs high-electron-mobility transistors (HEMTs) on InP substrate have shown high gain and low noise at millimeter-wave frequencies as compared to GaAs-based pseudormorphic ... See full document
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Characteristics of delta-doped InAlAs/InGaAs/InP high electron mobility transistors with a linearly graded InxGa1-xAs channel
... GHz in a common-source configuration, by using the HP-8510B network analyser at 300 ...indicated in figure ...V for the LGC-HEMT (LM-HEMT), ...intrinsic high- speed property of the ... See full document
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Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching
... process for AlSb/InAs high electron mobility transistors (HEMTs) using inductively coupled plasma (ICP) etching with BCl 3 ...very high peak transconductances of 781 mS/mm ... See full document
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High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge/Ge(x)Si(1-x)/Si substrate
... displayed in Fig. 6 共a兲 . In this sample, the total thickness of GaAs was ...thick channel 共Si doped at ...crystal x-ray measurement of the sample displays five peaks in the diffraction ... See full document
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Effect of formal passivations on temperature-dependent characteristics of high electron mobility transistors
... Recently, high electron mobility transistors 共HEMTs兲 have been applied widely in high-performance microwave and power ...circuits. 1-3 It is known that, practically, the ... See full document
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High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature
... AlGaN/GaN high electron mobility transistors 共HEMTs兲 have shown great potential for chemical and bio- chemical sensing ...their high electron sheet carrier concentration ... See full document
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An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors
... that for a device with a conventional carbon-doped GaN spacer ...barrier for blocking current leakage from the channel to the ...a high temperature shows a lower dispersion of pulsed I D ... See full document
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RF and logic performance improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel HEMT using gate-sinking technology
... 0.7 Ga 0.3 As composite-channel high-electron mobility transistors (HEMTs), which are fabricated using platinum buried gate as the Schottky contact metal, ... See full document
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Structure design criteria of dual-channel high mobility electron transistors
... reduced in DHEMT structure because of the effective double block from electron tunneling by the design of dual-channel (dual barrier) ...density, high voltage swing, good carrier confinement, ... See full document
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High performance non-alloyed pseudomorphic high electron mobility transistors
... and well defined edges of the non-alloyed contact pads indicate that the limit of using AuGeNi metal in small dimension devices, due to interface interaction dur[r] ... See full document
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Simulation and analysis of metamorphic high electron mobility transistors
... Abstract In this paper, the metamorphic high electron mobility transistors (mHEMTs) are investigated numerically and compared with pseudo- morphic high electron ... See full document
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Temperature effect on impact ionization characteristics in metamorphic high electron mobility transistors
... InGaAs channel makes it susceptible to induce the impact ionization ...voltage, high gate leakage current, and high output ...characteristics. In this work, the temperature-dependent char- ... See full document
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WSiN Cap Layer for Improvement of Ohmic Contact Morphology in AlGaN/GaN High Electron Mobility Transistors
... film as a protective cap layer of the internal ohmic metallization scheme and the GaN surface was developed to improve the surface morphology of the contact of AlGaN/GaN high electron mobility ... See full document
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