[PDF] Top 20 The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a gamma-Al2O3 buffer layer

... Conclusions A high-quality ZnO epitaxial film has been grown with pulsed-laser deposition on Si(111) substrates with a thin oxide g-Al 2 O 3 ... See full document

... 300 and 600  C without introducing oxygen gas ow; the growth rate is ...
1 and the ZnO layer thickness is 400 ...studies on ZnO lms grown on GaAs (111), ... See full document

... SiO 2 = 2910.7 kJ mol 21 , and DH ZnO = ...implies the formation of an amorphous silica layer at the Y 2 O 3 –Si interface can be obstructed ... See full document

... cm 2 , resulting from the Nd-YAG fourth-harmonic laser. The laser beam was focused onto the target with an incident angle of 45 and the fluence on the ... See full document

... r a c t This work investigated the influence of Zn/O flux ratio and Mn-doped ZnO buffer layer on the epitaxial growth of ZnO grown ... See full document

... between the AFM and the SCM images is ...exclude the correlation is due to topographic effect on the capacitance signals since the root-mean-square surface roughness is ... See full document

... terms and conditions apply. Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si (1 1 1) using a γ-Al2O3 ... See full document

... Abstract The scaling limit for VLSI gate oxide (SiO) is 15}20 As that is determined by the large direct-tunneling leakage ...obtained using a higher dielectric constant material. We have ... See full document

... sample 2 with an additional UVO treatment prior to GeO x N y formation has a lower leakage cur- rent than sample 1 because of the formation of thicker interface layer and ... See full document

... x-ray 2h/h diffraction pattern of ZnO:Al films on r-plane sapphire is shown in ...only the peaks of sapphire r-plane and ZnO:Al a-plane can be ... See full document

... because of the lower writing voltage and faster switching speed than those of Flash ...improve the cell size and device performance, one transistor 共1T兲 ferroelectric ... See full document

... buffer layer. When the films were annealed at 450 1C, the crystallinity increased, but it then decreased slightly with increase in annealing temperature from 450 to 500 ...resistivity ... See full document

... comparison, the MIM structure is also pre- pared. II. EXPERIMENT 4-in.-Si p-type wafers were used in this ...study. A HF- vapor passivation was used to suppress the native oxide for- mation ... See full document

... As 2 O 3 + 2GaAs→Ga 2 O 3 + 4As or As 4 ...Because the O 2 envi- ronment provides additional reaction paths 关Table III-共B兲兴, the content ... See full document

... †Institute of Environmental Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China Received August 9, 1999; accepted December 13, 1999 In the past 3 decades, research ... See full document

... coated on the Al 2 O 3 /Si substrate at 4000 rpm for 30 s and then dried on a hot plate at a tempera- ture of about 350 ...obtain ... See full document

... TiO 3 (PT) thin films were deposited on Al 2 O 3 (10 nm)/Si using lead acetate trihydrate and titanium isopropoxide with the addition of ... See full document

... analyze the SILC effect, we have plotted the current change (J stressed -J 0 )/J 0 as a function of bias voltage in ...than the J stressed -V plot shown in Fig. 4. For the ... See full document

... discussed the effects of annealing time on the structural and optical properties of sputtered ZnO ...treatment, the annealed ZnO films show ... See full document

... Results and discussion 3.1. Optimization of InGaN layer grown on bare ZnO substrates Initial InGaN layers were grown on bare ZnO substrates with a GaN ... See full document