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[PDF] Top 20 MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS

Has 10000 "MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS" found on our website. Below are the top 20 most common "MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS".

MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS

MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS

... Absfract-The processing parameters of monolithic polycrystalline silicon resistors are examined, and the effect of grain size on the sensi- tivity of polysilicon res[r] ... See full document

13

Modeling and optimization of a plastic thermoforming process

Modeling and optimization of a plastic thermoforming process

... Process Optimization Using the ‘‘inverse’’ neural network proposed in this study, we were able to predict the optimum set of processing parameters for the inputted part thickness ...input of a neural ... See full document

14

Hybrid intelligent approach for modeling and optimization of semiconductor devices and nanostructures

Hybrid intelligent approach for modeling and optimization of semiconductor devices and nanostructures

... extraction and design optimization of semiconductor nanoscale devices and ...scheme and parallel computing technique, the optimization methodology is developed and ... See full document

11

Experimental modeling and design optimization of push-pull electret loudspeakers

Experimental modeling and design optimization of push-pull electret loudspeakers

... experimental modeling technique and an optimi- zation procedure have been developed in this work for push- pull electret ...experimental modeling tech- nique relies on not only the electrical ... See full document

8

Timing modeling and optimization under the transmission line model

Timing modeling and optimization under the transmission line model

... Timing Modeling and Optimization Under the Transmission Line Model Tai-Chen Chen, Song-Ra Pan, and Yao-Wen Chang, Member, IEEE Abstract—As the operating frequency increases to gigahertz ... See full document

14

Modeling and Optimization of Network Lifetime in Wireless Video Sensor Networks

Modeling and Optimization of Network Lifetime in Wireless Video Sensor Networks

... motivation of this paper is to address the performance optimization of network lifetime and resource allocation for ...transmission and error recovery behavior are completely ...joint ... See full document

6

Analysis on Present Progresses and Trends on Modeling and Simulation Optimization of Manufacturing System

Analysis on Present Progresses and Trends on Modeling and Simulation Optimization of Manufacturing System

... 仿真技术作为一门独立的学科已经有 50 多年的 发展历史,尤其是经过近二三十年的发展,现代建模 与仿真(Modeling & Simulation, M&S)技术体系已经 形成,并日趋完善。 M&S 技术已经成为对人类社会发 展进步具有重要影响的一门综合性技术学科,已被广 泛地应用于制造系统的规划、管理和运行中,并逐渐 显现出解决大规模复杂问题的优越性。 ... See full document

6

Modeling and optimization of wafer-level spatial uniformity with the use of rational subgrouping

Modeling and optimization of wafer-level spatial uniformity with the use of rational subgrouping

... Figure 1: Single-wafer rapid thermal chamber EXPERIMENTAL DESIGN FOR TWO FACTORS In the RTO experiments, two process factors, processing time and temperature, were first [r] ... See full document

4

RESISTANCE SWITCHING CHARACTERISTICS IN POLYCRYSTALLINE SILICON FILM RESISTORS

RESISTANCE SWITCHING CHARACTERISTICS IN POLYCRYSTALLINE SILICON FILM RESISTORS

... Thus the observation that tran- sition voltage reaches a m a x i m u m value around the criti- cal doping concentration can be understood by the fact that the highest [r] ... See full document

4

Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistors

Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistors

... Institute of Physics. 关DOI: 10.1063/1.1511815兴 In analog and radio frequency circuits, polycrystalline silicon 共poly-Si兲 films are frequently used for resistors, the gate material ... See full document

4

TRANSPORT-PROPERTIES OF THERMAL OXIDE-FILMS GROWN ON POLYCRYSTALLINE SILICON - MODELING AND EXPERIMENTS

TRANSPORT-PROPERTIES OF THERMAL OXIDE-FILMS GROWN ON POLYCRYSTALLINE SILICON - MODELING AND EXPERIMENTS

... From the ramp-voltage-stressed Z-V measurements, the important physical parameters such as average field-enhancement factor, effective total trapping density, trap capt[r] ... See full document

13

INVESTIGATION ON THE DISTRIBUTION OF FLUORINE AND BORON IN POLYCRYSTALLINE SILICON SILICON SYSTEMS

INVESTIGATION ON THE DISTRIBUTION OF FLUORINE AND BORON IN POLYCRYSTALLINE SILICON SILICON SYSTEMS

... W. ) unless CC License in place (see abstract).. The boron and fluorine distribution pro- files was obtained with a Cameca IMS-4f ion microana- lyzer using O~ primary ion bom[r] ... See full document

7

Optimization of amorphous silicon layers in polycrystalline based heterostructure solar cell 溫世傑、張國雄

Optimization of amorphous silicon layers in polycrystalline based heterostructure solar cell 溫世傑、張國雄

... influence of amorphous layer thickness and energy gap on the performance of hetero-junction solar ...thicknesses and energy gaps make different Voc and Isc, We found that Voc and ... See full document

2

Nitrogen effects on the integrity of silicon dioxide grown on polycrystalline silicon

Nitrogen effects on the integrity of silicon dioxide grown on polycrystalline silicon

... integrity and excellent electrical characteris- ...incorporation of ni- trogen in N 2 O ...dielectrics of metal-oxide-semiconductor field effect transistors have been reported to exhibit good ... See full document

4

Electrical properties and modeling of ultrathin impurity-doped silicon dioxides

Electrical properties and modeling of ultrathin impurity-doped silicon dioxides

... range of 3–5 nm. As a result, various types of doped oxides have been used to re- place the conventional thermal ...Fluorine- and nitrogen-doped silicon oxides are the most popular candi- ... See full document

9

Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors

Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors

... The ultrahigh vacuum chemical vapor deposition (UHVICVD) grown poly-Si was served as the channel film, the chemical mechanical polishing (CMP) technique was used to polish the channel[r] ... See full document

3

Modified polycrystalline silicon chemical-vapor deposition process for improving roughness at oxide/polycrystalline silicon interface

Modified polycrystalline silicon chemical-vapor deposition process for improving roughness at oxide/polycrystalline silicon interface

... D 2004 Elsevier B.V. All rights reserved. Keywords: Annealing; Grain boundary; Silicon; Silicon oxide 1. Introduction Polysilicon (poly-Si) films formed by low pressure chemical-vapor deposition with silane ... See full document

5

Reliability of passivated P-type polycrystalline silicon thin film transistors

Reliability of passivated P-type polycrystalline silicon thin film transistors

... It can be seen that after plasma treatment, the turn on current, subthreshold swing, threshold voltage and leakage current (V~,>0 for p-type TFTs) are significantl[r] ... See full document

5

Phase field modeling of growth competition of silicon grains

Phase field modeling of growth competition of silicon grains

... tilting of the grain boundary due to unequal horizontal forces at the junction, the crystal orien- tations of the grains are chosen to have the same value but with an opposite ... See full document

9

Water passivation effect on polycrystalline silicon nanowires

Water passivation effect on polycrystalline silicon nanowires

... Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan 共Received 3 July 2007; accepted 28 October 2007; published online 16 November 2007兲 Defects present in the grain boundaries of ... See full document

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