[PDF] Top 20 Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material
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Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material
... performance and reliability over its lifetime, the electrical properties (dielectric constant, breakdown voltage and leakage current ) of interlayeryintermetal dielectric ... See full document
7
Influences of deposition temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating precursor
... for thermal stability, low deposition temperature is ...the moisture resistance of F x SiO y , the follow-up recording of moisture absorption by FTIR spec- trum was ... See full document
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Effect of fluorine flow and deposition temperature on physical characteristics and stability of fluorine-doped siloxane-based low-dielectric-constant material
... weak and such bonds are destroyed and decom- posed upon annealing at high temperature, producing a larger degradation in dielectric ...probability of occurrence of such bubble defects ... See full document
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Synthesis and characterization of fluorinated polybenzoxazine material with low dielectric constant
... Keywords: Dielectric constant; Fluorination; Benzoxazine 1. Introduction Low dielectric constant materials ðK , 3 :0Þ have the advantage of facilitating manufacture of ... See full document
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Heat, moisture and chemical resistance on low dielectric constant (low-k) film using diethoxymethylsilane (DEMS) prepared by plasma enhanced chemical vapor deposition
... the thermal stability, the films were annealed for 1 h in a nitrogen ambient at temperatures ranging from 400 to 800 ...the thermal stresses encountered during Cu interconnects fabrication process; ... See full document
7
Dielectric and barrier properties of spin-on organic aromatic low dielectric constant polymers FLARE and SiLK
... promise of 30% faster devices with fewer metal levels and a lower cost of produc- tion, attaining high device yields on chips with Cu interconnects remains the greatest challenge, making low-k ... See full document
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Modifications of low dielectric constant fluorinated amorphous carbon films by multiple plasma treatments
... 250°C, and flow rate 200 sccm. Table I lists the deposition and postdeposition ...parameters. Thermal stability was then examined by curing those a-C:F films in a furnace at elevated ... See full document
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The influences of moisture and fluorine on the characteristics of fluorinated silicate glass for copper metallization
... dimensions of the integrated circuits 共ICs兲 are scaled down continuously, the interconnect resistance–capacitance 共RC兲 time delay has become the dominant factor in determining the inter- connect ... See full document
5
Effect of moisture on electrical properties and reliability of low dielectric constant materials
... Results and discussion Fig. 2(a) presents the FT-IR absorption spectra of porous low-k dielectrics before and after moisture ...after moisture treatment, and the intensity ... See full document
5
Recovering dielectric loss of low dielectric constant organic siloxane during the photoresist removal process
... the resistance 共R兲, copper has recently been introduced as an interconnect metal, due to its high electrical con- ...the low dielectric constant 共low-k兲 materials are also proposed for ... See full document
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EFFECT OF FLUORINE INCORPORATION ON THE THERMAL-STABILITY OF PTSI/SI STRUCTURE
... Such a highly fluorinated layer acts as a flu- orine-buffer layer to change the PtSi/Si interface energy (and/or the silicide grain boundary energy) which in turn improve[r] ... See full document
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Impact of plasma treatment on structure and electrical properties of porous low dielectric constant SiCOH material
... substrates and aluminum as the metal electrodes were fabricated. The thickness of low-k dielectric is ...area of 30×30 μm 2 ...structure of 250 μm length and ...the ... See full document
4
Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications
... measurements. and bias temperature stress were performed to study the electrical properties and quality of MSZ ...research of thermal stress, the leakage current won’t be severely ... See full document
8
Dependence of Cu/Ta-N/Ta metallization stability on the characteristics of low dielectric constant materials
... strength of the interface between Ta barrier and FSG film was poorer than that between Ta barrier and OSG ...adhesion of Cu/Ta–N/Ta multilayers on FSG and OSG was determined by using ... See full document
5
A novel pretreatment technology for organic low-dielectric material to suppress copper diffusion and improve ashing resistance
... integration of organic low-dielectric material in copper interconnects for ultralarge scale integration applications is ...reduction of copper diffusion and the improvement ... See full document
5
Intrinsic thermal stability and quenching recovery of thin-film superconductors with thermal boundary resistance
... This manner for calculating (Jr)e2 is the same as that proposed by Unal and Chyu [17]. However, time is disregarded in this case. In order to study superconductor stability perfo[r] ... See full document
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The roles of hydrophobic group on the surface of ultra low dielectric constant porous silica film during thermal treatment
... spectra of methyl (m / e = 15) desorbed from low-k ...C and H atoms is very ...absorption of water, which has a polar bond between O and H because the electro-negativity between O ... See full document
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Trimethylchlorosilane treatment of ultralow dielectric constant material after photoresist removal processing
... spectra of samples STD, A, and ...intensities of the IR bands from the Si-OH and moisture 共938 and 3400 cm ⫺1 兲 de- crease significantly, as shown in the spectrum for sample ... See full document
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Preventing dielectric damage of low-k organic siloxane by passivation treatment
... 2 and prevent dielectric loss originating from O plasma and wet stripper ...processes. Material analyses 2 and electric measurements can confirm our ...current of H ... See full document
7
Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatment
... size of boron atoms do not damage the chemical bonding of the MSQ ...formation of densified surfaces after boron implantation can reduce the probability of moisture uptake into the ... See full document
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