[PDF] Top 20 3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits

... a 3-D numerical analysis to investigate the current path in the V-pit ...examining the e ffect of TDs in the V-pit structure, we found the ... See full document

... invesstagated the relationship between the emission efficiency of InGaN/GaN multiple quantum wells (MQWs) and the V-shape pits (V-pits) ... See full document

... IQE with Different Diameters of V-Shaped Pits at Various Wavelengths All the samples were analyzed by the power-dependent PL at 12 and 300 ...K. The measured ... See full document

... quantify the spatial overlap of holes and electrons because it has to include the wave function overlap of every ...from the total radiative recombination. The ... See full document

... where and are PL and excitation intensities, respec- tively. and are PL photon energy and excitation photon energy, ...by carrier injection efficiency by laser, light ... See full document

... study the temperature-dependent carrier transport in the LEDs with different well width, we summarized the EL efficiency at 80 K and 300 K in ...that the EL ... See full document

... electrons and holes distributions are quite nonuniform among the quantum wells especially for ...mass and therefore a very low mobility. Moreover, the trian- gular potential barriers ... See full document

... Despite the various arguments have been proposed and discussed, electron overflow out of the active region, Auger recombination, and insufficient transport of holes have ... See full document

... cient of 3 × 10 −30 cm 6 s −1 . Originally, the efficiency should increase with input current for the ideal ...However, the Auger recombination loss will compete ... See full document

... that the efficiency re- duces rapidly when LED operating under high carrier den- ...sity. The major cause of efficiency droop is still a huge con- ...mechanisms of droop ... See full document

... improve the performance of GaN-based light emitting diodes 共LEDs兲 due to their widespread application in solid-sate lighting, dis- play technology, color printing, and ... See full document

... increases, the quantum effi- ciency of InGaN/GaN LEDs decreases; this is the so-called “efficiency droop” phenomenon that has become crucial in high-power ...operations. ... See full document

... image of GaN epilayer overgrown on the GaN NRs template with SiO 2 ...on the top of it, the GaN epi- layer can only grow on the sidewall of ... See full document

... 2, 3, 4, 5, and 6 can be understood as follows. In general, the quantum- dot-like structures in traditional InGaN/AlGaN MQWs could be responsible for the surprisingly high ... See full document

... ultraviolet light emitting devices 共LEDs兲 have attracted great attention in last few years due to its potential applications in photocatalytic deodorizing such as air conditioner, 1 and there have ... See full document

... IEEE, and Shing-Chung Wang, Life Member, IEEE Abstract—This study demonstrated the enhancement of the light output power of InGaN–GaN multiple quantum-well ... See full document

... to the employment of the p-type GaN last ...Although the increase of Al composi- tion in the AlGaN EBL can create a higher energy barrier, the in- creased interface ... See full document

... work, the performance of blue InGaN/GaN light-emitting diodes (LEDs) with thin intermediate barriers at high injection current is ...From the experimental ... See full document

... behaviors of InGaN / GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness ...Huang, and Y.-H. Lai Institute of Photonics ... See full document

... 共ADN兲 and 4,4 ⬘ -bis 关2-共4-共N, N-diphenylamino兲phenyl兲 vinyl 兴 biphenyl 共DPAVBi兲 as the host and dopant materials for the emitting layer 共EML兲, ...device with similar ... See full document