[PDF] Top 20 AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
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AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
... demands of GaN-based HEMTs require a thermal stability as high-voltage power switching devices typically operate at elevated junction temperature (T j ...for GaN-based HEMTs ... See full document
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AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer
... free-standing GaN substrate (350 µm thick) with (0001) orientation was grown by hydride vapor phase epitaxy ...Ga surface was further polished by chemical mechanical polishing ...Ga ... See full document
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Effect of formal passivations on temperature-dependent characteristics of high electron mobility transistors
... metal deposition, the sample was immediately passi- vated by soaking in the ammonia-sulfide 关共NH 4 兲 2 S x , 5% 兴 solution for 10 min at room ...followed by blown dry N 2 ...However, by using ... See full document
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Structural and electrical characteristics of atomic layer deposited high kappa HfO2 on GaN
... in high-temperature and high-power electronics because of their wide energy band gaps, high breakdown fields, and high saturation velocities in high ...the ... See full document
3
Ti/Pt/Ti/Cu-Metallized Interconnects for GaN High-Electron-Mobility Transistors on Si Substrate
... The GaN HEMT fabrication process started with Ohmic contact ...metal of Ti/Al/Ni/Au was deposited on the wafer using an e-gun evaporator, 14–16) the wafer was then annealed by rapid thermal annealing ... See full document
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Simulation study on electrical characteristic of AlGaN/GaN high electron mobility transistors with AlN spacer layer
... thin AlN spacer layer in AlGaN/GaN interface which implies that the low interface roughness scattering on the AlGaN /AlN/GaN HEMTs in comparison with the conventional ...position ... See full document
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Molecular beam epitaxy regrowth and device performance of GaAs-based pseudomorphic high electron mobility transistors using a thin indium passivation layer
... Department of Electrical Engineering, National Central University, Chungli 32054, Taiwan Using the technique of molecular beam epitaxy, an indium passivation layer as thin as several tens ... See full document
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WSiN Cap Layer for Improvement of Ohmic Contact Morphology in AlGaN/GaN High Electron Mobility Transistors
... Department of Materials Science and Engineering, National Chiao-Tung University, 1001 University Rd, Hsinchu 300, Taiwan 2 Ferdinand-Braun-Institut fu¨r Ho¨chstfrequenztechnik, ...cap layer of the ... See full document
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Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors
... (inset of Figure ...out-diffusion of Ga as shown in the Auger results. Other Cu-based alloys formed included CuTi (2h ¼ ...existence of a thin polycrystalline TiN layer formed at the ... See full document
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High Electron Mobility AlGaN/AlN/GaN HEMT Structure With a Nano-scale AlN Interlayer
... Epitaxies of AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with different thickness of nano-scale AlN interlayers have been realized by ... See full document
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Investigation the performance of hydrogen peroxide pretreatment ZnO UV photodetectors using plasma-enhanced atomic layer deposition
... using plasma-enhanced ALD (PE- ALD) with O 2 plasma which could effectively decrease the Zn-OH ...stages of the deposition process ...low deposition temperature ...initial ... See full document
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Investigation the performance of hydrogen peroxide pretreatment ZnO UV photodetectors using plasma-enhanced atomic layer deposition
... To improve the quality of the ZnO films and further enhanced the performance of the ZnO MSM-UPDs, the sapphire substrates were pretreated by hydrogen peroxide (H 2 O 2 ) to increas[r] ... See full document
1
Investigation the performance of hydrogen peroxide pretreatment ZnO UV photodetectors using plasma-enhanced atomic layer deposition
... performance of the ZnO MSM-UPDs with H 2 O 2 pretreatment for 60 min was ...voltage of 5 V, the UV-visible rejection ratio of ZnO MSM-UPDs was improved to ...quality of the ZnO films using ... See full document
1
Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallisation
... AlGaN layer using a thermally stable tungsten nitride thin film as the gate ...material. Based on our previous study on nitrogen-rich tungsten nitride Schottky diodes that demonstrate a high Schottky ... See full document
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Atomic layer deposition of epitaxial ZnO on GaN and YSZ
... mismatch of about 10% with ZnO [7], is used for comparison with GaN ...that high- quality ZnO epitaxial layers can be grown on YSZ substrates by a pulsed-laser deposition ...substrates ... See full document
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Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
... application of the field plate will result in soft gain compression and thus better IMD3 performance as observed from the ...bandwidth of integration was 3.84 MHz and the center spacing of the ... See full document
5
High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature
... Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA 6 Department of Material Science and Engineering, University of Florida, Gainesville, Florida 32611, ... See full document
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Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion Implantation
... Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion Implantation View the table of ... See full document
6
Simulation and analysis of metamorphic high electron mobility transistors
... Department of Electronics Engineering, ...Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 300, Taiwan ...Institute of Microelectronics, Department of ... See full document
4
In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
... because of the poor confomality in- herent to ...seed layer with materials that can be properly processed in the dual-damascene technique for future technology ...because of its low electrical ... See full document
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