[PDF] Top 20 Thickness-dependent lattice relaxation and the associated optical properties of ZnO epitaxial films grown on Si (111)

... 24.6 and 9.75 nm, were derived from the fringe periods, which correspond to the ZnO and Y 2 O 3 layer, ...with the values obtained from X-ray reflectivity. Moreover, the ... See full document

... 300 and 600  C without introducing oxygen gas ow; the growth rate is ...
1 and the ZnO layer thickness is 400 ...studies on ZnO lms grown on GaAs ... See full document

... power dependent lasing spectra of the ZnO epi-layers with thicknesses of (a) 1,200 nm and (b) 555 nm grown on ...Si(111). The insets show the ... See full document

... PL of InGaN film grown at 725 ...function of temperature for both phases. (c) Emission efficiency (η) of both phases and (d) RT PL intensity of relaxed phase as a function ... See full document

... pattern of ZnO:Al films on r-plane sapphire is shown in ...only the peaks of sapphire r-plane and ZnO:Al a-plane can be seen at ... and 56.68  without ... See full document

... along the c-axis of the wurtzite structure. However, when the film was deposited at 550 °C, as shown in ...1c-2, the ori- entation of lump structure became ...all the ... See full document

... any epitaxial layer having a lattice parameter mismatch with the substrate of less than about 9% would grow pseudomorphically; ...thin films the deposit would be elastically ... See full document

... discussed the effects of annealing time on the structural and optical properties of sputtered ZnO ...treatment, the annealed ZnO films show ... See full document

... that the structural, electrical, and optical properties of the sputtered ZnO:Al thin films depend on working ...pressure. The SEM observation shows ... See full document

... between the AFM and the SCM images is ...exclude the correlation is due to topographic effect on the capacitance signals since the root-mean-square surface roughness is ... See full document

... GZO the Ga 2 O 3 contents are approximately 3 wt%) films having different ZnO buffer layers were deposited using radio frequency (rf) magnetron ...sputtering. The use of a grey-based ... See full document

... high-quality ZnO epitaxial film has been grown with pulsed-laser deposition on Si(111) substrates with a thin oxide g-Al 2 O 3 buffer ...XRD and TEM analysis, the major ... See full document

... Structural and optical properties of ZnO nanorods grown on Mg x Zn 1 x O buffer layers Liang-Wen Ji a , Chih-Ming Lin b , Te-Hua Fang a, *, Tung-Te Chu c , Huilin Jiang c ... See full document

... epitaxially grown on silicon 共111兲 substrate by matching the four silicon 共220兲 planes with the five 共112¯0兲 planes of ...ZnO. The spacing of ZnO 共112¯0兲 ... See full document

... type of stacking faults, I 1 or I 2 ...Unlike the ZnO epi-layers grown by PLD 12 and p-MBE 26 on c-sapphire where edge-type threading dislocations are the dominant ... See full document

... Also, the thickness of the grown InAlN in this study was increased with increasing TMIn mass ...rates of all InAlN films were around ...0.71, and 0.6 μm/h at x = ... See full document

... Results and discussion A typical cross-sectional view SEM image of the high-density ZnO nanowires grown on a large area of the substrate is shown in figure ...1. ... See full document

... examine the surface morphology of the samples. For the AFM operation, a constant scan speed of 1 ␮m/s was used, with a con- stant load of 30 nN being applied to the ... See full document

... Conclusion The PLD deposited ZnO thin films formed at the constant partial pressure of a N 2 O atmosphere at various substrate temperatures revealed different ferromagnetic ... See full document

... cells, and optical devices. 1,2 For the development of ZnO-based optoelectronic devices, it is necessary to grow high-quality both p- and n-type ZnO thin ...films. ... See full document