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[PDF] Top 20 Wide-range tunable semiconductor lasers using asymmetric dualquantum wells

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Wide-range tunable semiconductor lasers using asymmetric dualquantum wells

Wide-range tunable semiconductor lasers using asymmetric dualquantum wells

... III. R ESULTS AND D ISCUSSIONS The operation current is limited to below 400 mA to protect the device from being damaged. Tuning is achieved by rotating the grating horizontally. The grating is also fine tuned vertically ... See full document

3

Wide-range tunable dual-wavelength semiconductor laser using asymmetric dual quantum wells

Wide-range tunable dual-wavelength semiconductor laser using asymmetric dual quantum wells

... view, using ADQW for dual-wavelength oscillation is better than using 1 and 2 levels in the same quantum well because the latter case suffers a stronger mode competition as a result of fast intraband ... See full document

3

Broadly tunable semiconductor lasers using asymmetric dual quantum wells

Broadly tunable semiconductor lasers using asymmetric dual quantum wells

... The wide tuning range is possible due to the broad gain bandwidth provided by the asymmetric dual quantum-well structure. On the other hand, the grat- ing had been replaced with a mirror to see if a ... See full document

7

Mode competition in wide-range tunable dual-wavelength semiconductor laser using nonidentical InGaAsP quantum wells

Mode competition in wide-range tunable dual-wavelength semiconductor laser using nonidentical InGaAsP quantum wells

... However, in our recent experiments with our super-broadband semiconductor optical amplifier (SOA), we have found that when the mode spacing is larger than 110 nm, the light intensity o[r] ... See full document

1

174-nm mode spacing in dual-wavelength semiconductor laser using nonidentical InGaAsP quantum wells

174-nm mode spacing in dual-wavelength semiconductor laser using nonidentical InGaAsP quantum wells

... very wide tuning range of dual-wavelength semi- conductor lasers with properly designed nonidentical InGaAsP quantum wells is ...The wide separation of two wavelengths is possible due ... See full document

3

Radio-over-fiber DSB-to-SSB conversion using semiconductor lasers at stable locking dynamics

Radio-over-fiber DSB-to-SSB conversion using semiconductor lasers at stable locking dynamics

... a semiconductor laser is in- vestigated for DSB-to-SSB ...typical semiconductor laser is required as the key conversion unit, and no pump or probe signal is ...broad tunable range of microwave ... See full document

15

Reducing Temperature Dependence of Semiconductor Lasers Using Nonidentical Multiple Quantum Wells

Reducing Temperature Dependence of Semiconductor Lasers Using Nonidentical Multiple Quantum Wells

... In the same total injection carrier concentration, higher carrier concentration in certain QW produces higher gain for that QW Therefore the uniformity inside nonidentical MQW structure [r] ... See full document

9

Broadband semiconductor optical amplifiers and tunable semiconductor lasers

Broadband semiconductor optical amplifiers and tunable semiconductor lasers

... Keywords: semiconductor optical amplifiers, carrier distribution, broadband, nonidentical multiple quantum wells, quantum-well sequence, separate confinement hetero-structure, emission b[r] ... See full document

9

Extremely broadband tunable semiconductor lasers for optical communication

Extremely broadband tunable semiconductor lasers for optical communication

... In conclusion we have shown that low energy ion implantation induced QWI is an attractive method for post growth single step multiple bandgap tuning of high quality active[r] ... See full document

2

Wide range linear tunable BiCMOS transconductor and four-quadrant multiplier

Wide range linear tunable BiCMOS transconductor and four-quadrant multiplier

... new wide range BiCMOS transconductor and a four- quadrant multiplier using pseudo PNP transistors.. [5,6] are proposed.[r] ... See full document

4

C-band continuously tunable lasers using tunable fiber Bragg gratings

C-band continuously tunable lasers using tunable fiber Bragg gratings

... ring tunable fiber laser based on tunable fiber Bragg gratings (TFBG) integrated with an optical ...The tunable laser operating in the C-band has power variation, tuning resolution, tuning range ... See full document

3

Carrier capture competition between two different quantum wells in dual-wavelength semiconductor lasers

Carrier capture competition between two different quantum wells in dual-wavelength semiconductor lasers

... Absb-uct- Based on a three-level model, we have numeri- cally shown that a semiconductor gain medium with a structure consisting of two different quantum wells may lead [r] ... See full document

3

Improved temperature characteristics of semiconductor lasers due to Carrier redistribution among nonidentical multiple quantum wells

Improved temperature characteristics of semiconductor lasers due to Carrier redistribution among nonidentical multiple quantum wells

... The temperature-induced carrier redistribution among nonidentical MQWs has been observed to conhibute larger characteristic temperature and .less temperature dependence c[r] ... See full document

1

Tunable slow light device using quantum dot semiconductor laser

Tunable slow light device using quantum dot semiconductor laser

... subcarrier multiplexed signal, PBS: polarization beam splitter) 3. Conclusion We experimentally demonstrate a tunable slow light device using a 1.3 μm QD VCSEL at room temperature for the first time. The ... See full document

7

A Wirelessly Powered Smart Contact Lens with Reconfigurable Wide Range and Tunable Sensitivity Sensor Readout Circuitry

A Wirelessly Powered Smart Contact Lens with Reconfigurable Wide Range and Tunable Sensitivity Sensor Readout Circuitry

... dynamic range of sensor readout circuitry of the proposed sensor lens achieved the IOP range requirement of ...and wide detection range can be achieved ... See full document

12

Broadly tunable external-cavity semiconductor lasers in optical-communication band using Fabry-Perot laser diodes without anti-reflection coating

Broadly tunable external-cavity semiconductor lasers in optical-communication band using Fabry-Perot laser diodes without anti-reflection coating

... Abstract: Using proper quantum-well structure, carriers distribute over a broad bandwidth, suppressing self-oscillation of uncoated Fabry-Perot laser diodes, but still [r] ... See full document

2

Novel monitoring technique for DWDM tunable lasers using an isolator and a polarizer

Novel monitoring technique for DWDM tunable lasers using an isolator and a polarizer

... In order to demonstrate the feasibility of the proposed approach, we investigated the monitoring characteristic with an external cavity tunable laser, a polarization [r] ... See full document

1

A low phase noise wide tuning range CMOS quadrature VCO using cascade topology

A low phase noise wide tuning range CMOS quadrature VCO using cascade topology

... A Low Phase Noise Wide Tuning Range CMOS Quadrature VCO using Cascade Topology.. Chao-Shiun Wang, Shiau-Wen Kao* and Po-Chiun Huang**.[r] ... See full document

4

Extremely broadband superluminescent diodes/semiconductor laser amplifiers using nonidentical InGaAsP quantum wells

Extremely broadband superluminescent diodes/semiconductor laser amplifiers using nonidentical InGaAsP quantum wells

... In order to explain the measured difference in spectra and L-I characteristics, carrier transport effect, uniformity of carrier distribution inside nonidentical MQW structure, and proper[r] ... See full document

10

Wide Tunning Range 60 GHz VCO and 40 GHz DCO Using Single Variable Inductor

Wide Tunning Range 60 GHz VCO and 40 GHz DCO Using Single Variable Inductor

... Tunning Range 60 GHz VCO and 40 GHz DCO Using Single Variable Inductor Tai-You Lu, Chi-Yao Yu, Wei-Zen Chen, Senior Member, IEEE, and Chung-Yu Wu, Fellow, IEEE Abstract—This paper presents a 60 GHz, 16% ... See full document

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