第五章 總結與未來工作
5.2 未來工作
5.2.2 以 3 omega 方法量測薄膜之賽貝克因子
probe(圖 5.2 中紅色部分，圖中之黃色為 contact pad)介於此超晶格薄膜與金 屬層間，其與另一個於基材底部之 voltage probe 一起用以量測垂直方向穿
準確得知熱電材料垂直平面方向的ZT值。
圖 5.2 量測賽貝克因子之系統示意圖[44]
1w heat source
Substrate
TE film V2w
insulator insulator voltage probe
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附錄 A：誤差分析
頻率為 995.5Hz 之 V3ω值來進行分析，各參數如表 A.1 所示。 Digital Multimeter)量測阻值之量測誤差(該儀器之精準度為 0.01%，測得外 接電阻值為 34.0942Ω)所造成；所使用的電阻其溫度係數為 20ppm/K，假設 量測過程中室內溫度變化為 0.5K，則室內溫度變化所造成之誤差為 0.001%，
因此
R
out 約為 0.01%，因此將上述資料搭配表 A.1 代入式(A.7)分別求得待測樣品與參考樣品之加熱線電阻的誤差 0
附錄 B：量測數據
在 4.1 節實驗數據分析技巧當中，已附上厚度為 680nm sample1(圖 4.2)之實 驗量測數據之
V
3ω對頻率作圖，以下為其餘八組實驗數據之V
3ω訊號對頻率 作圖，其中實心的方塊為待測元件的V
3ω,total訊號，空心方塊為參考元件的3ω,sub
V
訊號。量測溫度標於圖的右上角。厚度 280 nm sample1(計算時，所取頻率範圍為 100-1000Hz)：
圖 B.1 厚度 280 nm 之碲化鉛薄膜 sample1 量測數據
厚度 280 nm sample2(計算時，所取頻率範圍為 100-2000Hz)：
圖 B.2 厚度 280 nm 之碲化鉛薄膜 sample2 量測數據
厚度 280 nm sample3(計算時，所取頻率範圍為 100-2000Hz)：
圖 B.3 厚度 280 nm 之碲化鉛薄膜 sample3 量測數據
厚度 460 nm sample1(計算時，所取頻率範圍為 200-2000Hz)：
圖 B.4 厚度 460 nm 之碲化鉛薄膜 sample1 量測數據
厚度 460 nm sample2(計算時，所取頻率範圍為 200-2000Hz)：
圖 B.5 厚度 460 nm 之碲化鉛薄膜 sample2 量測數據
厚度 460 nm sample3(計算時，所取頻率範圍為 200-2000Hz)：
圖 B.6 厚度 460 nm 之碲化鉛薄膜 sample3 量測數據
厚度 680 nm sample2(計算時，所取頻率範圍為 100-1000Hz)：
圖 B.7 厚度 680 nm 之碲化鉛薄膜 sample2 量測數據
厚度 680 nm sample3(計算時，所取頻率範圍為 100-1000Hz) ：
圖 B.8 厚度 680 nm 之碲化鉛薄膜 sample3 量測數據