第五章 剖面量測的先期研究
6.2 未來工作建議
首先，可進一步探討測量系統對於掃描結果的影響。針對不同需求，
可能必須選用不同的探針或設定不同的條件，以取得最佳的掃描影像。而 在進行掃描測量的同時，用以偵測懸臂振盪的雷射光源以及用以試片定位 的光學顯微鏡光源會對測量造成影響。當光線入射於試片表面時，可能會
增加載子的產生速率，使載子濃度改變，造成了表面電位的飄移。關於照 光所造成的影響，可做進一步的探討。
pn 區域的電位測量，因受限於許多表面效應的影響，而使其電位差值 小於理論值甚多，其之間的定量關係，也與理想狀況不同。可就此更深入 地加以研究，並進一步著手改善。
又由於KFM所測量為試片表面不同區域之間的表面電位差，如欲測量 未知試片的表面載子濃度，可嘗試利用性質穩定的惰性金屬作為參考電 位，同時進行掃描，以得到相對於金屬的表面電位。
在剖面測量方面，相較於平面的測量，還涉及到剖面試片的製作，使 得所遭遇的狀況更形複雜。因此目前這此仍面臨一些製作試片的問題，必 須根據實際情況加以改善，而主要原則是要提高研磨過後表面的平坦度，
並以適當處理消除如CMP過後的表面破壞層。此外，亦可嘗試使用聚焦離
子束(Focused Ion Beam, FIB)等方式製作剖面試片，比較表面電位影像的差
異。
而在建立起利用KFM測量載子濃度的方法之後，如欲應用在實際元件 的剖面測量，則必須進一步提高空間解析度以滿足需求。例如以奈米碳管 作為探針針尖，可縮小針尖的等效面積，提高空間解析度。
綜而言之，在利用掃描探針技術測量載子濃度分佈的技術上，本論文 已先就系統特性、試片處理，以及表面電位差的定量關係做了探討，並嘗 試應用在剖面試片的測量。雖然如此，仍然還有一些問題尚待解決，以建 立完整而可靠的測量方法，發揮掃描探針測量技術的優點，在元件分析上 獲得應用。
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簡 歷
姓名：蘇柏智
出生年月日：民國69 年7月29日 出生地：台北市
地址：台北縣新莊市建中街90巷18號 3樓 學歷：國立交通大學電子物理學系
(87年 9月 ～ 91 年6月) 國立交通大學電子研究所 (91年 9月 ～ 93 年6月)
已發表論文：
Po-Chih Su, Chih-Ming Hsieh, and Bing-Yue Tsui, “PN junction surface potential images measured by Kelvin probe force microscopy,” WSEAS Transactions on Electronics, Vol. 1, pp. 124-127, 2004.
Po-Chih Su, Chih-Ming Hsieh, Bing-Yue Tsui, Shien-Der Tzeng, and Shangjr Gwo, “Surface potential images of pn junction measured by Kelvin probe force microscopy,” Symposium on Nano Device Technology 2004, pp. 194-197.
碩士論文題目：
以掃描探針測量矽半導體載子濃度
Scanning Probe Microscopy Technique for Carrier Concentration Measurement in Silicon