研究動機

我們在前面的章節中，回顧了鑽石在異質基材上成核與成長的相關文 獻，可以知道偏壓輔助孕核法已廣泛的應用在各種不同的異質基材上以提 升鑽石的成核密度。而鑽石於異質基材上的沉積，所選擇的基材其基本的 性質往往會影響到鑽石成核及磊晶成長的品質。其中諸如晶格常數、表面 能、熱膨脹係數、溶碳率及碳化物的生成與否等，皆會有相當程度的影響。

我們由其他文獻中可以得知，鑽石可直接以面間距 2：3 比例生長在矽基材 上，但由於矽基材易形成碳化矽，會影響鑽石直接沉積於矽基材上，我們 在本研究中，希望透過鍺元素的添加，藉由對基材溶碳率的改變，觀察鑽 石與基材的界面，是否鑽石可大量的孕核在矽鍺基材上，而碳化矽的生成 是否會因鍺元素的加入而有所改變。更進一步，我們直接利用鍺元素作為 沈積的基材，希望藉此了解基材溶碳率及碳化物的生成與否對鑽石於異質 基材成核的影響。

自 Yugo 提出以偏壓法提升鑽石於異質基材的成核密度之後，一直受到 許多研究學者的青睞，而針對直流偏壓法，正偏壓法的使用相較於負偏壓 法一直以來較少研究進行討論，而負偏壓雖然可直接吸引正離子提高成核 密度，但因離子直接轟擊基材表面，是以相對的基材表面會受到相當程度 的損傷。我們於第二部分的實驗中，利用正偏壓分別於矽(100)及(111)基材 上成長方性鑽石薄膜，並針對界面進行觀察研究，希望藉此能了解正偏壓 輔助孕核法於異質材上的生長機制。

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