• 沒有找到結果。

1. CoSb3/Ni/Ag/Sn-Ag/Cu電極 與CoSb3/Sn/Ni/Ag/Sn-Ag/Cu電極 固液擴散接合,

經過預鍍錫後強度皆能提升到10MPa以上,接合界面也都形成預期的Ag3Sn、

Cu3Sn、Ni5(Sn,Sb)2及Ni5Sb2

2. CoSb3經過高溫長時間固液擴散接合後,Ni擴散阻礙層已無法發揮應有的作 用,後續將重點尋找CoSb3的擴散阻礙層。

3. 無預鍍Sn之 Zn4Sb3 /Ni/Ag/Sn-Ag/Cu固液擴散接合強度可達25.0MPa以上,較 預鍍Sn之Zn4Sb3 /Sn/Ni/Ag/Sn-Ag/Cu強度(15-20 MPa)高;但Ni障礙層與Zn形成 介金屬γNi₅Zn₂₁,消耗極快。 當Ni阻障層消耗完,Zn4Sb3與電極激烈反應,

造成熱電材料崩解。

4. Zn4Sb3經過SLID接合後進行400℃、500小時及1000小時時效後,當Ni完全反 應完後,Zn與O又形成ZnO、富Zn相、富Sb相及碳化,最後因內部空洞過多造 成熱電材料崩解。

5. Ni-Pd、Zr53Ni30Cu9Al8、Zr61Cu17.5Ni10Al7.5Si4及Ti42Zr40Ta3Si15四種金屬玻璃與 Zn4Sb3熱電做Diffusion couple之研究,Ni-Pd與Zn4Sb3熱電隨壓接時間的拉長,

IMC layer也增厚,因此不適合作為擴散阻障層;而Zr53Ni30Cu9Al8不論時間多

參考文獻

[1] 黃志誠、張學明.“神奇的熱電材料—利用溫差的熱電發電技術.” (2004):14 [2] 朱旭山. "熱電材料與元件之原理與應用." (2005): 93.

[3] Caillat, T., etc,“Zn-Sb alloys for thermoelectric power generation”, Energy Conversion Engineering Conference, IECEC 96., Proceedings of the 31st Intersociety , Vol. 2, pp.905-909 (1996).

[4] Thomson, William. "4. On a Mechanical Theory of Thermo-Electric Currents."Proceedings of the Royal Society of Edinburgh 3 (1857): 91-98.

[5] Goldsmid, H. J., and R. W. Douglas. "The use of semiconductors in thermoelectric refrigeration." British Journal of Applied Physics 5.11 (1954): 386.

[6] Nature materials, 7 (2008) 105-114 [7] 工業材料,第 286 期,第 131-139 頁

[8] Nolas, G. S., et al. "The next generation of thermoelectric

materials."Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on. IEEE, 1998.

[9] 中央研究院週報 第 1169 期

[10] Ur, Soon-Chul, Philip Nash, and Il-Ho Kim. "Solid-state syntheses and properties of Zn 4 Sb 3 thermoelectric materials." Journal of alloys and compounds 361.1 (2003): 84-91.

[11] N.K. Dutta, Applied Physics Letters, pp. 1219-1220 (1997)

[12] A. Borshchevsky, D. T. Morelli, G. P. Meisner, J. P. Fleurial, T. Caillat, NASA Tech Brief, NPO-19909, 25(6), 2001.

[13] Mayer, H. W., I. Mikhail, and K. Schubert. "Ü ber einige phasen der Mischungen ZnSbN und CdSbN." Journal of the Less Common Metals 59.1 (1978): 43-52.

[14] 李雅明,固態電子學

[15] Androulakis, John, et al. "Nanostructuring and High Thermoelectric Efficiency in p‐Type Ag (Pb1–ySny) mSbTe2+ m." Advanced Materials 18.9 (2006): 1170-1173.

[16] 莊東漢,”熱電模組接合技術及其挑戰”,工業材料雜誌 322 期 [17] R. Zybala, K.T. Wojciechowski, M. Schmidt and R. Mania, Materialy

Ceramiczne/Ceramic Materials, Vol. 62, p.481-485(2010).

[18] Sano, Seijiro, Hiroyuki Mizukami, and Hiromasa Kaibe. "Development of high-efficiency thermoelectric power generation system." Komai’su technical report 49.152 (2003).

[19] Rowe, David Michael, ed. CRC handbook of thermoelectrics. CRC press, 1995.

[20] 葉建弦,固態熱電材料在廢熱回收領域之應用

[21] Snyder, G. Jeffrey, et al. "Disordered zinc in Zn4Sb3 with phonon-glass and electron-crystal thermoelectric properties." Nature materials 3.7 (2004): 458-463.

[22] Lin, Wen P., Daniel E. Wesolowski, and Chin C. Lee. "Barrier/bonding layers on bismuth telluride (Bi2Te3) for high temperature thermoelectric modules." Journal of Materials Science: Materials in Electronics 22.9 (2011): 1313-1320.

[23] 莊東漢(1999) “擴散軟銲技術在電子封裝之應用”,電子月刊,5 (11),118-125.

[24] Jacobson, D. M., and G. Humpston. "Diffusion soldering." Soldering & Surface Mount Technology 4.1 (1992): 27-32.

[25] 李冠廷. "Zn4Sb3 中溫熱電材料與銅電極之薄膜固液擴散接合研究." 臺灣 大學材料科學與工程學研究所學位論文 (2013): 1-78.

[26] Wittmer, Marc. "Properties and microelectronic applications of thin films of

refractory metal nitrides." Journal of Vacuum Science & Technology A 3.4 (1985):

1797-1803.

[27] Holloway, Karen, and Peter M. Fryer. "Tantalum as a diffusion barrier between copper and silicon." Applied Physics Letters 57.17 (1990): 1736-1738.

[28] Rossnagel, S. M., et al. "Thin, high atomic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applications." Journal of Vacuum Science & Technology B 14.3 (1996): 1819-1827.

[29] Lan, Y. C., et al. "Diffusion of nickel and tin in p-type (Bi, Sb) 2Te3 and n-type Bi2 (Te, Se) 3 thermoelectric materials." Applied Physics Letters 92.10 (2008):

101910-101910.

[30] Wada, H., K. Takahashi, and T. Nishizaka. "Electroless nickel plating to Bi-Te sintered alloy and its properties." Journal of Materials Science Letters 9.7 (1990):

810-812.

[31] R. M. Redstall and Studd, in CRC Handbook of Thermoelectrics,edited by D.M.

Rowe(CRC, Boca Raton, FL, 1995), pp. 641-643.

[32] Cui, J. L., et al. "Preparation, thermoelectric properties and interface analysis of n-type graded material FeSi 2/Bi 2 Te 3." Materials Science and Engineering: B 94.2 (2002): 223-228.

[33] Bierschenk, James L., Richard A. Howarth, and Norbert J. Socolowski. "Thermal stress resistance joints solder containing tin, silver and indium or cadmium." U.S.

Patent No. 5,441,576. 15 Aug. 1995.

[34] Sato, Takehiko, and Kazuo Kamada. "Thermoelectric piece and process of making the same." U.S. Patent No. 6,083,770. 4 Jul. 2000.

[35] Zhao, Degang, et al. "Interfacial evolution behavior and reliability evaluation of CoSb 3/Ti/Mo–Cu thermoelectric joints during accelerated thermal aging."Journal of Alloys and Compounds 477.1 (2009): 425-431.

[36] Li, Xiaoya, et al. "Mo/Ti/CoSb 3 joining technology for CoSb 3 based materials."

Thermoelectrics, 2005. ICT 2005. 24th International Conference on. IEEE, 2005.

[37] Zhao, Degang, Haoran Geng, and Xinying Teng. "Fabrication and reliability evaluation of CoSb 3/W–Cu thermoelectric element." Journal of Alloys and Compounds 517 (2012): 198-203.

[38] W. Klement, R. H. Willens, and P. Duwez, "Non-Crystalline Structure in Solidified Gold-Silicon Alloys," Nature , 187, 869–870 (1960).

[39] 薛承輝, 金屬玻璃之發展與應用. 臺大校友雙月刊, 2015. 98: p. 8-11.

[40] Wang, Chih-Wei, et al. "Zr–Ti–Ni thin film metallic glass as a diffusion barrier between copper and silicon." Journal of Materials Science 50.5 (2015): 2085-2092.

[41] Bower, Robert W. "Characteristics of aluminum‐titanium electrical contacts on silicon." Applied Physics Letters 23.2 (1973): 99-101.

[42] Ting, C. Y., and M. Wittmer. "The use of titanium-based contact barrier layers in silicon technology." Thin Solid Films 96.4 (1982): 327-345.

[43] Tsukimoto, S., et al. "Formation of Ti diffusion barrier layers in thin Cu (Ti) alloy films." Journal of electronic materials 34.5 (2005): 592-599.

[44] Olowolafe, J. O., M. A. Nicolet, and J. W. Mayer. "Chromium thin film as a barrier to the interaction of Pd 2 Si with Al." Solid-State Electronics 20.5 (1977): 413-415.

[45] Vassilev, George Penev, Tomas Gomez-Acebo, and Jean-Claude Tedenac.

"Thermodynamic optimization of the Ni-Zn system." Journal of phase equilibria 21.3 (2000): 287-301.

[46] S,Budurov, G. Vassilev, and N. Kuck:Z. Metallkd., 1978, Vol. 68, pp.226.

[47] J. Schramm: Z. Metallkd., 1938, Vol. 30, pp. 122.

[48] F. Lihl: Z. Metallkd., 1952, Vol. 43, pp. 310.

[49] F. Lihl: Z. Metallkd., 1955, Vol. 46, pp. 438.

[50] A. Malaruka and V. Melihov: Proc. Nucl. Phys. Inst., Akad. Nauk Kazakh. SSR, 1969, Vol. 9, pp. 78.

[51] A. Morton: Phys. Status Solidi, 1977, Vol. 44 (1), pp. 205.

[52] G. Nover and K. Schubert: J. Less-Common Met., Vol. 75, 1980, pp. 51.

[53] W. Eckman: Z. Phys. Chem., 1931, vol. B12, pp. 57.

[54] Wang, Chao-hong, Hsien-hsin Chen, and Po-yi Li. "Interfacial reactions of high-temperature Zn–Sn solders with Ni substrate." Materials Chemistry and Physics 136.2 (2012): 325-333.

[55] Chan, Y. C., M. Y. Chiu, and T. H. Chuang. "Intermetallic compounds formed during the soldering reactions of eutectic Sn-9Zn with Cu and Ni substrates."

Zeitschrift für Metallkunde 93.2 (2002): 95-98.

[56] Chou, Chin-yi, Sinn-wen Chen, and Yee-shyi Chang. "Interfacial reactions in the Sn–9Zn–(xCu)/Cu and Sn–9Zn–(xCu)/Ni couples." Journal of materials research 21.07 (2006): 1849-1856.

[57] Bader, W. G. "Dissolution and Formation of Intermetallics in the Soldering Process, Paper from Physical Metallurgy of Metal Joining, Proceedings of AIME Symposium, St Louis, MO, October 16-17, 1980." AIME Papers (1980): 257-268.

[58] VanBeek, A., A. Stolk, and J. J. VanLoo. "Multiphase Diffusion in the Systems Fe--Sn and Ni-Fe--Sn." Zeitschrift fur Metallkunde 73.7 (1982): 439-444.

[59] Ho, C. E., et al. "Effects of limited Cu supply on soldering reactions between SnAgCu and Ni." Journal of electronic materials 35.5 (2006): 1017-1024.

[60] Blair, Howard D., Tsung-Yu Pan, and John M. Nicholson. "Intermetallic

compound growth on Ni, Au/Ni, and Pd/Ni substrates with Sn/Pb, Sn/Ag, and Sn solders [PWBs]." Electronic Components & Technology Conference, 1998.

[61] Lee, Chwan-Ying, and Kwang-Lung Lin. "The interaction kinetics and compound formation between electroless Ni P and solder." Thin Solid Films 249.2 (1994):

201-206.

[62] Lin, Kwang-Lung, and Chun-Jen Chen. "The interactions between In-Sn solders and an electroless Ni-P deposit upon heat treatment." Journal of Materials Science:

Materials in Electronics 7.6 (1996): 397-401.

[63] Harris, Paul G., and Kaldev S. Chaggar. "The role of intermetallic compounds in lead-free soldering." Soldering & surface mount technology 10.3 (1998): 38-52.

[64] Tu, K. N., & Thompson, R. D. (1982). Kinetics of interfacial reaction in bimetallic Cu-Sn thin films. Acta Metallurgica, 30(5), 947-952.

[65] Tu, K. N. "Interdiffusion and reaction in bimetallic Cu-Sn thin films." Acta Metallurgica 21.4 (1973): 347-354.

[66] Bartels, F., et al. "Intermetallic phase formation in thin solid-liquid diffusion couples." Journal of electronic materials 23.8 (1994): 787-790.

[67] Humpston, G., D. M. Jacobson, and S. P. S. Sangha. "Diffusion soldering for electronics manufacturing." Endeavour 18.2 (1994): 55-60.

[68] Marinković, Ž., and V. Simić. "Kinetics of reaction at room temperature in thin silver-metal couples." Thin Solid Films 195.1 (1991): 127-136.

[69] Li, J. F., P. A. Agyakwa, and C. M. Johnson. "Kinetics of Ag 3 Sn growth in Ag–

Sn–Ag system during transient liquid phase soldering process." Acta Materialia 58.9 (2010): 3429-3443.

[70] Li, J. F., et al. "Interfacial reactions between molten Sn–Bi–X solders and Cu substrates for liquid solder interconnects." Acta materialia 54.11 (2006): 2907-2922.

[71] Li, J. F., et al. "Comparison of interfacial reactions of Ni and Ni–P in extended contact with liquid Sn–Bi-based solders." Acta materialia 55.2 (2007): 737-752.

[72] H. Nowotny and J. Pesl, Monatsh. Chem., 82, 336-343 (1951) in German.

[73] J.D. Donaldson, A. Kjekshus, D.G. Nicholson, and F. Rakke, J. Less-Common Met., 41, 255-263 (1975).

[74] M. Hansen. “Binary Alloy Phase Diagrams.” Vol.4 (1986): 2017-2023.

[75] Kawaharada, Yoshiyuki, et al. "Thermoelectric properties of CoSb 3." Journal of alloys and compounds 315.1 (2001): 193-197.

[76] G. Chen, M.S. Dresselhaus, G. Dresselhaus, J.-P. Fleurial, T. Caillat, Recent developments in thermoelectric materials, Int. Mater. Rev. 48 (1) (2003) 45–66.

[77] G.J. Snyder, E.S. Toberer, Complex thermoelectric materials, Nat. Mater. 7(2008) 105–114.

[78] A. Harnwunggmoung, K. Kurosaki, T. Plirdpring, T. Sugahara, Y. Ohishi, H.

Muta, S. Yamanaka, Thermoelectric properties of Ga-added CoSb3 based skutterudites, J. Appl. Phys. 110 (2011) 013521.

[79] Y. Qiu, L. Xi, X. Shi, P. Qiu, W. Zhang, L. Chen, J.R. Salvador, J.Y. Cho, J. Yang, Y.-C. Chien, S.-W. Chen, Y. Tang, G.J. Snyder, Charge-compensated compound defects in Ga-containing thermoelectric skutterudites, Adv. Funct. Mater. 23(2013) 3194–3203.

[80] Y. Tang, Y. Qiu, L. Xi, X. Shi, W. Zhang, L. Chen, S.-M. Tseng, S.-W. Chen, G.J.

Snyder, Phase diagram of In–Co–Sb system and thermoelectric properties of In-containing skutterudites, Energy Environ. Sci. 7 (2014) 812–819.

[81] Chen, Wei-an, et al. "Interfacial reactions in Ni/CoSb 3 couples at 450° C."Journal of Alloys and Compounds 632 (2015): 500-504.

[82] N.L. Peterson, Self-diffusion in pure metals, J. Nucl. Mater. 69–70 (1978) 3–37.

[83] K.I. Hirano, R.P. Agarwala, B.L. Averbach, M. Cohen, Diffusion in Cobalt–Nickel alloys, J. Appl. Phys. 33 (10) (1962) 3049–3053.

[84] R. Hahnel, W. Miekeley, H. Wever, Diffusion studies on the B8 phase of the Ni/Sb system, Phys. Status Solidi (a) 97 (1) (1986) 181–190.

[85] Okamoto, H. "Ni-Sn (nickel-tin)." Journal of Phase Equilibria and Diffusion 29.3 (2008): 297-298.

[86] Karakaya, I., and W. T. Thompson. "The Ag-Sn (silver-tin) system." Bulletin of Alloy Phase Diagrams 8.4 (1987): 340-347.

[87] 鄭信民, et al. "X 光繞射應用簡介." 工業材料雜誌, 工研院材料所微結構分 析實驗室 (2002).

[88] 楊忠霖. "熱電材料與銅電極之固液擴散接合研究." 臺灣大學材料科學與工 程學研究所學位論文 (2013): 1-193.

[89] Ohtsuki, Madoka, et al. "Tungsten-based metallic glasses with high crystallization temperature, high modulus and high hardness." Materials transactions 46.1 (2005):

48-53.

[90] 葉威廷. "固液擴散接合製作熱電模組之界面反應及其電性之研究." 臺灣大 學材料科學與工程學研究所學位論文 (2014)

[91] Chang, Jen-Chun, et al. "Effects of tungsten contents on the microstructure, mechanical and anticorrosion properties of Zr–W–Ti thin film metallic glasses."

Thin Solid Films 584 (2015): 253-256.

相關文件