總之，製造一個SiN鈍化Γ 型閘極MHEMT的一個新穎的裝置
處理方法已經被研究出來。閘極長度削減，SiN表面鈍化和場極板架 構可以在同一時間內被達成和改善元件性能。目前的轉移曝光方法可 以容易被應用於先進的高精密處理元件。關鍵方法是沉積閘極金屬穿 過一階段於AlGaN和Si3N4之間底切來獲得一個減少0.6μm閘極長度
隨著從1.2μm閘極窗額外的0.6μm場極板。閘極-金屬長度的影響、
場極板長度和Si3N4厚度在AlGaN/GaN高電子遷移率電晶體(HEMTs)
上的性能也被研究。
Γ型閘極技術可以增加關閉狀態和導通狀態崩潰特性；然而，Γ
型閘極GaN HEMT 元件可以在較高的Vds下被操作來展現更好的輸
出功率。
除了電流密度外，汲極到源極和閘極到汲極的崩潰電壓，元件線
性，單位電流增益和電壓增益頻率也被改善，作為和那些沒有場極板
的1.2μm閘極元件相比。
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