當元件的閘極氧化層持續下降至2 nm，如何增加運作的時脈與降低高 功率的消耗已經成為元件製程最具挑戰的問題。在更先進的高介電常數介 電層與金屬閘極達到簡易與具高成本效益的量產技術前,有效解決這些問題 的方法之一為引進氮進入閘極氧化層。氮的引進將使相同等效氧化層厚度 的閘極絕緣層具有較厚的物理厚度而減少其穿隧電流，並同時可有效地抑 制硼的擴散。電漿氮化製程由於具備單晶圓技術以及多製程整合能力，不 同於其他的閘極氮氧化技術，而能產生精確的氮離子分佈控制，此實驗主 要提供了一個改善此主流製程技術在量產上的問題。
經本研究利用OES 的強度來間接預測電漿氮化閘極製程反應下，二氧 化矽中氮的含量與製程最佳化。結果，獲得以下的結論:
1. 在波長337.03nm 的光譜訊號與氮濃度有著最好的相關性。
2. 此製程的氮濃度推測應該主要由波長337.03nm Nitrogen radical 所 貢獻。
3. 光譜訊號強度與電性參數如等效氧化層厚度，汲極飽和驅動電流和 臨界電壓有合理的線性關係存在。
4. 光譜訊號強度、電性參數與氮濃度在變化的趨勢上符合理論上的推 測。
5. 由於光譜訊號強度與電性參數有相關性，因此利用光譜訊號可以對
電性參數找出最佳化的區間。
6. 此預測之方法具有即時與簡單之優點。
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自 傳
來自嘉義縣新港鄉的小康家庭，家中成員五人，個人排行老么。早年 因父親為勞工階級所以家人皆以儉持家，現今兄弟皆已成家分居各處，但 每週末常有家庭聚會，共聚一堂。
大學就讀於中興大學機械系，在校期間除專業課目外，對校外活動也 多有參與。由於個性外向善於溝通，常代表系上參加校際公關活動與康輔 社團。工作多年後由於在職場上專業技能的需求，在公司的長官與家人的 鼓勵下進入交通大學工學院半導體學分班進修。進修期間接受恩師 陳家 富教授的薰陶與多位優秀的教授的指導，讓我在專業與工作方式有了長足 的進步。
十二年的外商職場生涯從科林研發（Lam Reserch）到應用材料（Applied Materials）大多負責新產品專案管理。由於外商的高度競爭，與實事求的文 化倒是造就了抗壓的優勢與責任感。
期待在學業完成後能有更好的升遷管道，也期盼與許多優秀的同學共 創更好的未來。