結論與未來工作 - 矽基板上濺鍍沉積氮化銦薄膜之研究

在實驗中長晶溫度從 100℃~400℃，隨著長晶溫度的增加，內部電阻呈現增加的趨勢，隨著長晶溫度的增加，理想因子呈現增加的趨勢，在 100℃與 400℃中

參數

編號 DC Power(W) N2 flow(sccm) Temperture(℃) 濺鍍時間(min) 靜置時間(min)

SL_A 25 2 100 10 0

SL_B 25 2 100 10 30

SL_C 25 2 100 10 60

表4-1-1 SL_A、SL_B 與 SL_C 製程參數表

理想因子(n) 內部電阻 SL_A 4 33KΩ SL_B 5 200KΩ SL_C 8 4MΩ

表4-1-2 SL_A、SL_B 與 SL_C 理想因子與內部電阻值關係表

參數

編號 DC Power(W) N2 flow(sccm) Temperture(℃) 濺鍍時間(min)

SL_100 25 2 100 10

SL_200 25 2 200 10

SL_300 25 2 300 10

SL_400 25 2 400 10

表4-2-1 SL_100、SL_200、SL_300 與 SL_400 製程參數表

理想因子(n) 內部電阻 SL_100 3 33KΩ SL_200 20 10KΩ SL_300 19 20KΩ SL_400 9 70KΩ

表4-2-2 在不同長晶溫度下之理想因子與內部電阻值關係表

T 編號

未退火 Anneal 150℃

Anneal 200℃

Anneal 250℃

Anneal 300℃

Anneal 350℃

Anneal 400℃

A SL-A A_200 A_300 A_350 表4-3-1 SL-A 之退火溫度圖

理想因子(n) 內部電阻 SL-A 3.19 33KΩ SL-A_Anneal200 2.88 22KΩ SL-A_Anneal300 1.57 25KΩ SL-A_Anneal350 1.5 10KΩ

表4-3-2 SL-A 之理想因子與內部電阻值對後續退火溫度表

理想因子(n) 內部電阻 DL-InN 2 5KΩ SL-InN 9 3.7MΩ

表4-4-1 DL-InN 與 SL-InN 理想因子與內部電阻值關係表

圖2-1 磁控濺鍍示意圖

圖2-2 薄膜成長示意圖

圖2-3-1 (a)形成接面前均勻摻雜 p 型和 n 型半導體，(b)熱平衡時，在空乏區的電場及p-n 接面的能帶圖

圖2-3-2(a)在冶金接面有陡摻雜變化的 p-n 接面，(b)在熱平衡下陡接面的能帶圖，(c)空間電荷分佈，(d)空間電荷分佈的長方形近似。

300 400 500 600 700 800 0

200 400 600 800 1000 1200

Intensi ty

Wavelength(nm)

圖4-1-1 全頻譜光源

-2 -1 0 1 2 -2.0x10^-6

0.0 2.0x10^-6 4.0x10^-6 6.0x10^-6 8.0x10^-6 1.0x10^-5 1.2x10^-5 1.4x10^-5 1.6x10^-5 1.8x10^-5 2.0x10^-5 2.2x10^-5 2.4x10^-5

-2.5 -2.0 -1.5 -1.0 -0.5 0.0

-6.0x10^-7 -5.0x10^-7 -4.0x10^-7 -3.0x10^-7 -2.0x10^-7 -1.0x10^-7 0.0

Curr ent(A)

Voltage(V)

Dark current Photo current

Current(A)

Voltage(V)

圖4-1-2 SL_A 之電流-電壓曲線圖，●為 SL_A 暗電流 I-V 曲線圖，▲為 SL_A 照光I-V 曲線圖。

-2 -1 0 1 2 -2.0x10^-6

-1.0x10^-6 0.0 1.0x10^-6 2.0x10^-6 3.0x10^-6 4.0x10^-6 5.0x10^-6 6.0x10^-6 7.0x10^-6 8.0x10^-6 9.0x10^-6 1.0x10^-5 1.1x10^-5 1.2x10^-5 1.3x10^-5 1.4x10^-5

Dark current Photo current

Curre nt(A)

Voltage(V)

圖4-1-3 SL_B 之電流-電壓曲線圖。●為 SL_B 暗電流 I-V 曲線圖，▲為 SL_B 照光I-V 曲線圖。

-2 -1 0 1 2 -4.0x10^-6

-2.0x10^-6 0.0 2.0x10^-6 4.0x10^-6 6.0x10^-6

Cu rr e n t( A )

Voltage(V) Dark current

Photo current

圖4-1-4 SL_C 電流-電壓曲線圖。●為 SL_C 暗電流 I-V 曲線圖，▲為 SL_C 照光I-V 曲線圖。

-2 -1 0 1 2 -2.0x10^-6

0.0 2.0x10^-6 4.0x10^-6 6.0x10^-6 8.0x10^-6 1.0x10^-5 1.2x10^-5 1.4x10^-5 1.6x10^-5 1.8x10^-5

Curre nt(A)

Voltage(V) SL_A Dark current

SL_B Dark current SL_C Dark current

圖 4-1-5 SL_A、SL_B 與 SL_C 暗電流比較 I-V 曲線圖。

0 30 60 0.0

1.0x10^-6 2.0x10^-6 3.0x10^-6

Curr ent (A)

standing time(min) reverse bias 2V

reverse bias 1V reverse bias 0.5V

圖 4-1-6 在不同偏壓下靜置時間對光電流值關係圖。

-2 -1 0 1 2 -2.0x10^-6

0.0 2.0x10^-6 4.0x10^-6 6.0x10^-6 8.0x10^-6 1.0x10^-5 1.2x10^-5 1.4x10^-5 1.6x10^-5 1.8x10^-5 2.0x10^-5 2.2x10^-5 2.4x10^-5

-2.5 -2.0 -1.5 -1.0 -0.5 0.0

-6.0x10^-7 -5.0x10^-7 -4.0x10^-7 -3.0x10^-7 -2.0x10^-7 -1.0x10^-7 0.0

Curr ent(A)

Voltage(V)

Dark current Photo current

Current(A)

Voltage(V)

圖4-2-1 SL100 之電流-電壓曲線圖，●為 SL100 暗電流 I-V 曲線圖，▲為 SL100 照光I-V 曲線圖。內圖為逆向偏壓時的光暗電流值。

-3 -2 -1 0 1 2 3 -6.0x10^-4

-4.0x10^-4 -2.0x10^-4 0.0 2.0x10^-4 4.0x10^-4 6.0x10^-4

Dark current Photo current

Curr ent(A)

Voltage(V)

圖4-2-2 SL200 之電流-電壓曲線圖，●為 SL200 暗電流 I-V 曲線圖，▲為 SL200 照光I-V 曲線圖。

-3 -2 -1 0 1 2 3 -2.5x10^-3

-2.0x10^-3 -1.5x10^-3 -1.0x10^-3 -5.0x10^-4 0.0 5.0x10^-4

Dark current Photo current

Curr ent(A)

Voltage(V)

圖4-2-3 SL300 之電流-電壓曲線圖，●為 SL300 暗電流 I-V 曲線圖，▲為 SL300 照光I-V 曲線圖。

-3 -2 -1 0 1 2 3 -1.0x10^-5

0.0 1.0x10^-5 2.0x10^-5 3.0x10^-5 4.0x10^-5

Dark current Photo current

Curr ent(A)

Voltage(V)

圖4-2-4 SL400 之電流-電壓曲線圖，●為 SL400 暗電流 I-V 曲線圖，▲為 SL400 照光I-V 曲線圖。

-2 -1 0 1 2 -3.0x10^-5

-2.0x10^-5 -1.0x10^-5 0.0 1.0x10^-5 2.0x10^-5 3.0x10^-5

Curre nt(A)

Voltage(V)

SL100 SL200 SL300 SL400

圖4-2-5 暗電流值在不同長晶溫度下之曲線圖

-2 -1 0 1 2 -2.0x10^-6

0.0 2.0x10^-6 4.0x10^-6 6.0x10^-6 8.0x10^-6 1.0x10^-5 1.2x10^-5 1.4x10^-5 1.6x10^-5 1.8x10^-5 2.0x10^-5 2.2x10^-5 2.4x10^-5

-2.5 -2.0 -1.5 -1.0 -0.5 0.0

-7.0x10^-7 -6.0x10^-7 -5.0x10^-7 -4.0x10^-7 -3.0x10^-7 -2.0x10^-7 -1.0x10^-7 0.0

Current(A)

Voltage(V)

Current(A)

-2 -1 0 1 2 0.0

2.0x10^-5 4.0x10^-5 6.0x10^-5

-2.5 -2.0 -1.5 -1.0 -0.5 0.0

-1.0x10^-6 -9.0x10^-7 -8.0x10^-7 -7.0x10^-7 -6.0x10^-7 -5.0x10^-7 -4.0x10^-7 -3.0x10^-7 -2.0x10^-7 -1.0x10^-7 0.0

SL-A Anneal200 Dark SL-A Anenal200 Photo

Cur rent (A)

Voltage(V)

圖4-3-2 SL-A_Anneal200 電流-電壓曲線圖。●為 SL-A_Anneal200 暗電流 I-V 曲線圖，▲為SL-A_Anneal200 照光 I-V 曲線圖。內圖為反向偏壓時的光暗電流

值。

-2 -1 0 1 2 0.0

1.0x10^-5 2.0x10^-5 3.0x10^-5 4.0x10^-5 5.0x10^-5

-2.5 -2.0 -1.5 -1.0 -0.5 0.0

-2.0x10^-7 -1.5x10^-7 -1.0x10^-7 -5.0x10^-8 0.0

Current(A)

Voltage(V)

SL-A Anneal300 Dark SL-A Anenal300 Photo

C u rr e n t(A)

Voltage(V)

圖4-3-3 SL-A_Anneal300 電流-電壓曲線圖。●為 SL-A_Anneal300 暗電流 I-V 曲線圖，▲為SL-A_Anneal300 照光 I-V 曲線圖。內圖為反向偏壓時的光暗電流

值。

-2 -1 0 1 2 -2.0x10^-5

0.0 2.0x10^-5 4.0x10^-5 6.0x10^-5 8.0x10^-5 1.0x10^-4 1.2x10^-4

-2.5 -2.0 -1.5 -1.0 -0.5 0.0

-8.0x10^-6 -7.0x10^-6 -6.0x10^-6 -5.0x10^-6 -4.0x10^-6 -3.0x10^-6 -2.0x10^-6 -1.0x10^-6 0.0

SL-A Anneal350 Dark SL-A Anenal350 Photo

Current(A)

Voltage(V)

圖4-3-4 SL-A_Anneal350 電流-電壓曲線圖。●為 SL-A_Anneal350 暗電流 I-V 曲線圖，▲為SL-A_Anneal350 照光 I-V 曲線圖。內圖為反向偏壓時的光暗電流

值。

100 150 200 250 300 350 0.0

2.0x10^-7 4.0x10^-7 6.0x10^-7 8.0x10^-7 1.0x10^-6 1.2x10^-6

phot o c urrem t(A)

Temperture()

reverse bias 2V reverse bias 1V reverse bias 0.5V

圖4-3-5 SL-A 之不同電壓下之光電流對後續退火溫度之關係。▲為逆向偏壓 0.5V 時之光電流值，●為逆向偏壓為-1V 時之光電流值，■為逆向偏壓為-2V

時之光電流值。

P-type Silicon LT-InN HT-InN

(a)

P-type Silicon HT-InN

(b)

圖4-4-1 結構示意圖(a)DL-InN (b)SL-InN

-2 -1 0 1 2 -2.0x10^-4

-1.5x10^-4 -1.0x10^-4 -5.0x10^-5 0.0 5.0x10^-5 1.0x10^-4 1.5x10^-4 2.0x10^-4

DL-InN Dark current DL-InN Photo current

Current(A)

Voltage(V)

圖4-4-2 DL-InN 之照光與不照光電流-電壓曲線圖。●為 DL-InN 暗電流 I-V 曲線圖，▲為DL-InN 光電流 I-V 曲線圖。

-2 -1 0 1 2 -1.0x10^-6

0.0 1.0x10^-6 2.0x10^-6 3.0x10^-6 4.0x10^-6 5.0x10^-6 6.0x10^-6

Current(A)

Voltage(V) SL-InN Dark current

SL-InN Photo current

圖4-4-3 SL-G 照光與不照光條件下之電流電壓曲線圖。●為 SL-InN 暗電流 I-V 曲線圖，▲為SL-InN 光電流 I-V 曲線圖。

-0.4 -0.2 0.0 0.2 0.4 -4.0x10^-7

-2.0x10^-7 0.0 2.0x10^-7 4.0x10^-7

SL-InN

Current(A)

Voltage(V) DL-InN

-0.04 -0.02 0.00 0.02 0.04 -1.0x10^-8

-5.0x10^-9 0.0 5.0x10^-9 1.0x10^-8

Current(A)

Voltage(V)

圖4-4-4 DL-InN 與 SL-InN 光電流-電壓曲線圖(左圖為 DL-InN，右圖為 SL-InN)

100 200 300 400 500 600 700 800 900 1000 1100 0.000

0.005 0.010 0.015 0.020 0.025

Responsivi ty(A/ W )

Wavelength(nm) DL-InN Responsivity

圖4-4-5 DL-InN 波長響應度曲線圖。虛線為響應度趨勢線。

圖4-4-6 InN-Si 異質接面能帶圖

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