我 們 實 驗 室 成 功 改 良 合 成 出 的 電 子 型 有 機 半 導 體 材 料 NTCDI-OCF3和PTCDI-OCF3。且經過分子單晶排列解析後，驗證 NTCDI-OCF3因含有-OCF3這類拉電子基的有機分子，在堆疊排列表 現上，分子與分子之間的距離的確是比較緊密，這也是這類材料製作 成元件之後可以較穩定的在空氣之中操作的原因之一。我們也經由連 續性的施加電壓來佐證越是緊密的分子排列，無論在輸出電流的衰減 或是元件臨界電壓飄移的現象上，也都是比較小的。同時更藉由單晶 結構的分析，瞭解到以NTCI-OCF3為主的排列方式，由於重複的單位 晶格中分子的共軛平面與下一個分子的共軛平面是一直線方向，故也 使得半導體在下接觸式電極元件結構中得以有較佳的特性表現。我們 也透過製作不同接觸電極的元件，最後以Mo這個較低功含數的電極 材料得到最佳的傳電子速率為3.58 10-2 cm-2 V-1 s-1、元件電流開關 比為5.2 105、元件臨界電壓為 1.3 V。
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附圖
附圖 1. 1 H-NMR (CDCl3), 化合物NTCDI-OCH3
附圖 2. 13 C-NMR (CDCl3), 化合物NTCDI-OCH3
附圖 3. EI質譜圖, 化合物NTCDI-OCH3
附圖 4. 1 H-NMR (CDCl3), 化合物NTCDI-OCF3
附圖 5. 13 C-NMR (CDCl3), 化合物NTCDI-OCF3
附圖 6. EI質譜圖, 化合物NTCDI-OCF3
附表一 NTCDI-OCF3與NTCDI-OCH3解單晶數據表
NTCDI-OCF3 NTCDI-OCH3
Formula C30H16F6N2O6 C30H22N2O6 Crystal system monoclinic monoclinic Space group P1 21/c 1(no.14) P21/A (no.14)
Cell
volume(Å3) 3057.77(259) 1164.63 (30) Density(g/cm3) 1.222 1.444
a(Å) 20.4261(30) 15.118(2) b(Å) 7.5528(11) 4.3632(6) c(Å) 21.3798(32) 18.033(4)
β(o) 112.02(0) 101.74(0)
Vita
Chia-Chun Kao (高嘉駿)
PERSONAL DATA
Born: April 25, 1978, Chia-Yi, Taiwan Nationality: Taiwan, the Republic of China
Office Address: Department of Materials Science and Engineering, National Chiao-Tung University, 1001, Ta-Hsueh Rd., Hsinchu 30050, Taiwan, ROC
Tel: 886-3-5712121 ext. 55344
E-mail: [email protected]
EDUCATION
Ph.D. of, Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan, October 2008.
Master of Science, Department of Chemistry, National Central University, Jhongli, Taiwan, July 2004.
Bachelor of Science, Department of Chemistry, National Central University, Jhongli, Taiwan, July 2002.
PUBLICATIONS
Journal Papers
1. Chia-Chun Kao, Pang Lin, Cheng-Chung Lee, Yi-Kai Wang, Jia-Chong Ho, and Yu-Yuan Shen, “High-performance bottom-contact devices based on an air-stable n-type organic semiconductor N, N-bis (4-trifluoromethoxybenzyl)-1, 4, 5, 8-naphthalene-tetracarboxylic di-imide”, Appl. Phys. Lett. 90, 212101 (2007).
2. Chia-Chun Kao, Pang Lin, Yu-Yuan Shen, Jing-Yi Yan, Jia-Chong Ho Cheng-Chung Lee, and Li-Hsin Chan, “Solid-state structure of the naphthalene-based n- type semiconductor, and performance improved with Mo-based source/drain electrodes”, Synthetic Metals 158, 299 (2008).
3. Chia-Chun Kao, Pang Lin, Yu-Yuan Shen, Jing-Yi Yan, Jia-Chong Ho Cheng-Chung Lee, and Li-Hsin Chan, “Perylenetetracarboxylic diimide-based bottom-contact devices: A study on two kinds of source/drain electrodes, ITO and MoW”, Accepted for publication by Synthetic Metals (August, 2008).
4. Chia-Chun Kao, Pang Lin, Li-Hsin Chan, Cheng-Chung Lee, and Jia-Chong Ho,
“Bottom-contact n-channel organic thin-film transistors with naphthalene-based derivatives”, revised for publication by Electrochemical and Solid-State Letters (August, 2008).
International Conference Papers
1. Yu-Yuan Shen, Yi-Kai Wang, Chia-Chun Kao, Jia-Chong Ho, and Hseih-Tao Chou, “Bending Effect if Organic Thin Film Transistors Fabricated on Plastic Substrates”, International Display Manufacturing Conference and Exhibition, IDMC (2007), p.485-488.
2. Jiing-Fa Wen, Yu-Yuan Shen, Yi-Kai Wang, Chia-Chun Kao, Jia-Chong Ho, and Hseih-Tao Chou, “Characteristics Improvement of Flexible Organic Yhin Film Transistors by Self-assembled Monolayers Treatment”, International Display Manufacturing Conference and Exhibition, IDMC (2007), p.319-322.
3. Chia-Chun Kao, Xiang-Liang Chen, Yu-Yuan Shen, Jia-Chong Ho, and Cheng-Chung Lee, “Influence of source/drain electrodes on device performance of naphthalene-based organic thin-film transistor”, International Symposium for Flexible Electronics and Display, ISFED (2007), p.114-115.