關 於 date retention ， thermionic emission ， direct tunneling 和 trap-to-trap tunneling ，在與資料損失相關中，是三個漏失最大的要 素。臨界電壓的減少歸結於陷井世代在氧化層中和接面狀態世代在穿 隧氧化層和通道接面之間，通常稱做電子退化。在我們的元件中可以 發現 Si-NCs 記憶體在 Si-NCs 沉積時間為 60 秒有最好的特性和 date retention 的特性在十年後全部的樣品不會喪失超過 0.5V。
總之，根據我們的研究我們顯示證明出，埋藏 Si-NCs 於 SONOS 記憶體的氮化矽層中有更快的寫入和抹除速度、更低的元件操作電壓
和優秀的 date retention 的特性，而且 Si-NCs 沉積時間為 30 秒是最佳 的沉積時間。
4.2 未來展望
在這篇專題研究中，我們發現到 Si-NCs 沉積時間為 30 秒是最佳的 沉積時間，所以我們能在這最佳化的沉積時間將矽奈米晶體埋藏於氮 化矽層中不同的位置，此外，我們可以用 high-K 材料來改變 storage layer 和 blacking oxide 的材料來增進元件的特性。
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