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表面電漿共振外差干涉儀基本架構

瞭解表面電漿共振所引發的特性與共光程外差干涉儀的原理後,我們將表面 電漿共振裝置與共光程外差干涉儀結合而構成一個基本的表面電漿共振外差干 涉儀,其如Fig. 2.18所示。Fig. 2.18中,一線性偏振光經電光晶體EO調制變成為 外差光源後,此外差光源以表面電漿共振角θsp的角度入射至表面電漿共振裝置底

面,反射後通過穿透軸與x軸成45°的檢偏板AN,最後到達光偵測器D形成一測試 信號。另外,當電子訊號被帶通濾波器濾波後則形成為一參考信號。將參考信號 和測試信號送入相位計PM後,則可精確地測出相位差φ。在此相位差φ 與待測物 理量相關,例如:微小角度、波長、濃度、折射率等等;因此,藉由測量出相位 差φ 值,進而能估算出相關的物理量。

SPR Probe

PC PM FG

D

AN (45°) Rotation

Stage θsp

Laser EO

Fig. 2.18 表面電漿共振外差干涉儀。

2.5 小結

在本章中首先說明了表面電漿共振的基本原理與其特性。其次說明一般外差 干涉術的原理及外差光源的調制方式,與其共光程外差干涉儀的工作原理;而針 對共光程外差干涉儀所引起的測量誤差量也進行探討與分析。由於表面電漿共振 裝置提供了非常靈敏的特性,而共光程外差干涉儀可以提供精確且不受環境干擾 的測量相位差之裝置,因此結合兩者構成的表面電漿共振外差干涉儀將可以應用 在許多不同科學研究的領域上,同時此架構也具有裝置簡單、操作容易、即時、

快速、避免環境干擾且具有高解析度的優點。

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